IP Library › Granted Patent US 12,290,002
Granted Patent B2
US 12,290,002 · App. 18/232,941 · Granted Apr 29, 2025

Magnetization rotational element, magnetoresistance effect element, semiconductor element, magnetic recording array, and method for manufacturing magnetoresistance effect element

Inventors: Yugo Ishitani (Tokyo, JP); Tomoyuki Sasaki (Tokyo, JP); Yohei Shiokawa (Tokyo, JP)
Assignee: TDK CORPORATION
H10N50/10G11C11/161G11C11/1673G11C11/1675H10B61/22H10N50/01H10N50/80H10N50/85
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,290,002
App. No.
18/232,941
Granted
Apr 29, 2025
Kind
B2
Abstract

A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.

Claims (52)

1. A magnetization rotational element comprising:

a spin-orbit torque wiring; and

a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and configured for spins to be injected from the spin-orbit torque wiring,

wherein the spin-orbit torque wiring has a plurality of spin generation layers and at least one insertion layer located between the plurality of spin generation layers in the first direction,

the insertion layer has a lower electrical resistivity than the spin generation layers, and

the spin generation layers include an element selected from the group consisting of Mo, Ru, Rh, Pd, Ta, W, Ir, Pt, Au, and Bi.

2. The magnetization rotational element according to claim 1 ,

wherein the insertion layer includes an element selected from a group consisting of Mg, Al, Si, Ti, Cr, Fe, Co, Cu, Ga, Ge, and Ag.

3. The magnetization rotational element according to claim 1 ,

wherein a thickness of the insertion layer is equal to or smaller than a spin diffusion length in a material constituting the insertion layer.

4. The magnetization rotational element according to claim 1 ,

wherein the at least one insertion layer comprises a plurality of insertion layers, and

wherein the number of the insertion layers is six or smaller.

5. The magnetization rotational element according to claim 1 ,

wherein the spin-orbit torque wiring comprises an overlapping region that overlaps the first ferromagnetic region and non-overlapping region that is free of overlapping with the first ferromagnetic region in a plan view in the first direction, and

wherein the at least one insertion layer extends over the non-overlapping region with the overlapping region interposed therebetween.

6. The magnetization rotational element according to claim 1 ,

wherein the thickness of the at least one insertion layer is smaller than a thickness of each of the spin generation layers.

7. The magnetization rotational element according to claim 1 ,

wherein the thickness of the at least one insertion layer is equal to or smaller than five times a coupling radius of an element constituting the insertion layers.

8. The magnetization rotational element according to claim 1 ,

wherein the thickness of the at least one insertion layer is 10 Å or smaller.

9. The magnetization rotational element according to claim 1 ,

wherein the thickness of each of the spin generation layers is within a range of 8 Å to 20 Å.

10. The magnetization rotational element according to claim 1 ,

wherein the at least one insertion layer includes an element constituting the spin generation layers.

11. A magnetization rotational element comprising:

a spin-orbit torque wiring; and

a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and configured for spins to be injected from the spin-orbit torque wiring,

wherein the spin-orbit torque wiring has a plurality of spin generation layers and at least one insertion layer located between the plurality of spin generation layers in the first direction,

the insertion layer has a lower electrical resistivity than the spin generation layers,

the at least one insertion layer comprises a plurality of insertion layers, and

the number of the insertion layers is six or smaller.

12. The magnetization rotational element according to claim 11 ,

wherein the insertion layer includes an element selected from a group consisting of Mg, Al, Si, Ti, Cr, Fe, Co, Cu, Ga, Ge, and Ag.

13. The magnetization rotational element according to claim 11 ,

wherein the spin generation layers include an element selected from the group consisting of Mo, Ru, Rh, Pd, Ta, W, Ir, Pt, Au, and Bi.

14. The magnetization rotational element according to claim 11 ,

wherein a thickness of the insertion layer is equal to or smaller than a spin diffusion length in a material constituting the insertion layer.

15. The magnetization rotational element according to claim 11 ,

wherein the spin-orbit torque wiring comprises an overlapping region that overlaps the first ferromagnetic region and non-overlapping region that is free of overlapping with the first ferromagnetic region in a plan view in the first direction, and

wherein the at least one insertion layer extends over the non-overlapping region with the overlapping region interposed therebetween.

16. The magnetization rotational element according to claim 11 ,

wherein the thickness of the at least one insertion layer is smaller than a thickness of each of the spin generation layers.

17. The magnetization rotational element according to claim 11 ,

wherein the thickness of the at least one insertion layer is equal to or smaller than five times a coupling radius of an element constituting the insertion layers.

18. The magnetization rotational element according to claim 11 ,

wherein the thickness of the at least one insertion layer is 10 Å or smaller.

19. The magnetization rotational element according to claim 11 ,

wherein the thickness of each of the spin generation layers is within a range of 8 Å to 20 Å.

20. The magnetization rotational element according to claim 11 ,

wherein the at least one insertion layer includes an element constituting the spin generation layers.

Priority Claims (2)
JP 2019-212835 · Nov 26, 2019 · national
JP 2020-173445 · Oct 14, 2020 · national
Continuity (2)
Division 17104931 · Nov 25, 2020
Related Publication 20230389442A1 · Nov 30, 2023
References Cited (39)
US 8350347B2 · Gaudin et al. · 2013 [cited by applicant]
US 10593388B2 · Shiokawa et al. · 2020 [cited by applicant]
US 10593868B2 · Shiokawa et al. · 2020 [cited by applicant]
US 20140252439A1 · Guo · 2014 [cited by applicant]
US 20150348606A1 · Buhrman et al. · 2015 [cited by applicant]
US 20160276006A1 · Ralph · 2016 [cited by examiner]
US 20170076769A1 · Shirotori et al. · 2017 [cited by applicant]
US 20170077394A1 · Saida · 2017 [cited by applicant]
US 20170169872A1 · Yoda et al. · 2017 [cited by applicant]
US 20170222135A1 · Fukami et al. · 2017 [cited by applicant]
US 20180114558A1 · Yoda et al. · 2018 [cited by applicant]
US 20180254773A1 · Yoshinari · 2018 [cited by examiner]
US 20180301199A1 · Sasaki · 2018 [cited by examiner]
US 20180308535A1 · Shiokawa · 2018 [cited by examiner]
US 20190057732A1 · Shiokawa et al. · 2019 [cited by applicant]
US 20190066749A1 · Yoda et al. · 2019 [cited by applicant]
US 20190074043A1 · Sasaki · 2019 [cited by examiner]
US 20190088711A1 · Shiokawa · 2019 [cited by examiner]
US 20190267542A1 · Komura et al. · 2019 [cited by applicant]
US 20190348329A1 · Shiokawa et al. · 2019 [cited by applicant]
US 20200136017A1 · Ashida et al. · 2020 [cited by applicant]
US 20200312392A1 · Tsumita · 2020 [cited by examiner]
US 20200357982A1 · Kula · 2020 [cited by examiner]
US 20210167278A1 · Ishitani · 2021 [cited by examiner]
CN 108886061A · 2018 [cited by applicant]
JP 2017216286A · 2017 [cited by applicant]
WO 2016021468A1 · 2016 [cited by applicant]
WO 2019167575A1 · 2019 [cited by applicant]
Kato et al.; “Observation of the Spin Hall Effect in Semiconductors”; Science; Dec. 2004; vol. 306; pp. 1910-1913. [cited by applicant]
Miron et al.; “Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection”; Letter; Aug. 2011; vol. 476; pp. 189-194. [cited by applicant]
Liu et al.; “Spin torque switching with the giant spin Hall effect of tantalum”; Cornell University and Kavli Institute at Cornell; Mar. 2012; pp. 1-19; pp. 1-12. [cited by applicant]
Liu et al.; “Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect”; Physical Review Letters; Aug. 2012; vol. 109; pp. 096602-1-096602-5. [cited by applicant]
Lee at al .; “Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect”; Applied Physics Letters; Mar. 2013; vol. 102; pp. 1-17. [cited by applicant]
Lee et al.; “Thermally activated switching of perpendicular magnet by spin-orbit spin torque”; Applied Physics Letters; 2014; vol. 104; pp. 072413-1-072413-5. [cited by applicant]
Fukami et al.; “Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system”; Nature Materials; May 2016; vol. 15; pp. 535-542. [cited by applicant]
Fukami et al.; “A spin-orbit torque switching scheme with collinear magnetic easy axis and current configuation”; Nature Nanotechnology; Mar. 2016; vol. 11; pp. 1-6. [cited by applicant]
Takahashi et al.; “Spin injection and detection in magnetic nanostructures”; Physical Review B; 2003; vol. 67; pp. 052409-1-052409-4. [cited by applicant]
Feb. 2, 2023 Office Action issued in U.S. Appl. No. 17/104,931. [cited by applicant]
Apr. 27, 2023 Office Action issued in Chinese Patent Application No. 202011319561.X. [cited by applicant]