Method for manufacturing a resist composition
The present invention provides a method for manufacturing a resist composition which is used in a manufacturing process of a semiconductor apparatus, comprising the steps of: cleaning a manufacturing apparatus for the resist composition with a cleaning solution; analyzing the cleaning solution taken out from the manufacturing apparatus; repeating the step of cleaning and the step of analyzing until a concentration of a nonvolatile component(s) contained in the cleaning solution became 10 ppm or less; and manufacturing the resist composition by using the manufacturing apparatus after the step of repeating. There can be provided a method for manufacturing a resist composition which can manufacture a resist composition lowered in coating defects.
1. A method for cleaning a manufacturing apparatus for a silicon-containing resist under layer film-forming composition, which is used in a manufacturing process of a semiconductor apparatus, comprising the steps of:
cleaning the manufacturing apparatus, including a preparation tank and a pipe, for the silicon-containing resist under layer film-forming composition with a cleaning solution;
analyzing the cleaning solution taken out from the manufacturing apparatus;
repeating the step of cleaning and the step of analyzing until a concentration of a nonvolatile component(s) contained in the cleaning solution becomes 10 ppm or less,
wherein the concentration of the nonvolatile component(s) is calculated by using any of an inductively coupled plasma mass spectrometer, an inductively coupled plasma atomic emission spectrometer and an atomic absorption spectrometer in analyzing the cleaning solution, and
wherein the cleaning solution is taken out from the manufacturing apparatus, the cleaning solution is evaporated to dryness, and a solution in which a residue of the cleaning solution is dissolved again in a solvent to be used for analysis is used for calculating the concentration of the nonvolatile component(s).
2. The method for cleaning according to claim 1 , wherein the nonvolatile component(s) is/are a component(s) derived from a material(s) other than a solvent(s) used in the silicon-containing resist under layer film-forming composition.
3. The method for cleaning according to claim 1 , comprising repeating the step of cleaning and the step of analyzing until a concentration of a nonvolatile component(s) contained in the cleaning solution becomes 1 ppm or less.