Manufacturing method of semiconductor package
The present disclosure provides a method for manufacturing a semiconductor package. The method includes providing a carrier, forming a semiconductor die layer over the carrier, and exposing the conductive contact from a close end of the insulating layer by an etching operation. Forming the semiconductor die layer includes forming an insulating layer over the carrier, forming a trench having a close end and an open end in the insulating layer, forming a conductive contact in the trench, and placing a semiconductor die over the insulating layer.
1. A method for manufacturing a semiconductor package, comprising:
providing a carrier;
forming an insulating layer over the carrier;
forming a first semiconductor die layer over the insulating layer, comprising:
forming a shallow trench in the insulating layer;
forming a conductive contact in the shallow trench; and
placing the first semiconductor die over the insulating layer; and
exposing the conductive contact from the insulating layer by evenly thinning down the insulating layer in an etching operation.
2. The method of claim 1 , further comprising debonding the carrier from the insulating layer prior to exposing the conductive contact.
3. The method of claim 1 , wherein the forming the shallow trench in the insulating layer comprises patterning a photomask over the insulating layer and forming the shallow trench with a closed end in the insulating layer.
4. The method of claim 1 , wherein the forming the conductive contact in the shallow trench further comprises forming a seed layer in the closed end of the shallow trench.
5. The method of claim 1 , subsequent to forming a shallow trench in the insulating layer, a thinnest portion of the insulating layer is about 2 micrometer.
6. The method of claim 4 , wherein the etching operation comprises removing a portion of the seed layer.
7. The method of claim 1 , wherein placing the first semiconductor die comprises placing known good die over the insulating layer.
8. A method for manufacturing a semiconductor package, comprising:
providing a carrier;
forming a first semiconductor die layer over the carrier, comprising:
forming a first polymer layer over the carrier;
forming a shallow trench in the first polymer layer;
forming a conductive contact in the shallow trench; and
placing the first semiconductor die over the first polymer layer; and
exposing the conductive contact from the first polymer layer by evenly thinning down the first polymer layer in an etching operation.
9. The method of claim 8 , further comprising debonding the carrier from the first polymer layer prior to exposing the conductive contact.
10. The method of claim 8 , wherein the first polymer layer and the conductive contact are a portion of a first redistribution layer (RDL).
11. The method of claim 8 , wherein the forming the conductive contact in the shallow trench further comprises forming a seed layer in the shallow trench.
12. The method of claim 8 , wherein forming the conductive contact in the shallow trench is performed concurrently with forming a RDL over the first polymer layer.
13. The method of claim 8 , further comprising forming a second RDL over the first RDL.
14. The method of claim 8 , wherein the etching operation comprises a dry etch operation.
15. A method for manufacturing a semiconductor package, comprising:
providing a carrier;
forming a semiconductor die layer over the carrier, comprising:
forming an insulating layer over the carrier;
forming a trench having a closed end and an open end in the insulating layer;
forming a conductive contact in the trench; and
placing a semiconductor die over the insulating layer; and
exposing the conductive contact from the closed end of the trench in the insulating layer by evenly thinning down the insulating layer in an etching operation.
16. The method of claim 15 , wherein forming the trench having the closed end and the open end in the insulating layer comprises patterning a photomask layer over the insulating layer and removing a portion of the insulating layer.
17. The method of claim 16 , wherein removing the portion of the insulating layer is free from exposing the carrier.
18. The method of claim 15 , wherein forming the conductive contact in the trench comprises forming a conductive contact protruding from the insulating layer.
19. The method of claim 15 , wherein forming the conductive contact in the trench comprises forming a conductive contact extending over a top surface of the insulating layer.
20. The method of claim 15 , wherein exposing the conductive contact from the closed end of the trench in the insulating layer comprises a dry etch operation.