Array substrate sensor and detection device
Disclosed are an array substrate, a manufacturing method thereof, a sensor and a detection device. The array substrate includes: a base substrate; a thin-film transistor (TFT) being disposed on the base substrate and including a source electrode and an active layer; a passivation layer disposed on the TFT; a first metal layer disposed on the passivation layer; an insulating layer disposed on the first metal layer; a through hole structure running through the insulating layer, the first metal layer and the passivation layer; and a detection unit being disposed on the insulating layer and including a second metal layer, wherein the second metal layer makes direct contact with the source electrode via the through hole structure.
1. An array substrate, comprising:
a base substrate;
a thin-film transistor (TFT) being disposed on the base substrate and including a source electrode and an active layer;
a passivation layer disposed on the TFT;
a first metal layer disposed on the passivation layer;
an insulating layer disposed on the first metal layer;
a through hole structure running through the insulating layer, the first metal layer and the passivation layer; and
a detection unit being disposed on the insulating layer and including a second metal layer, wherein
the second metal layer makes direct contact with the source electrode via the through hole structure,
the array substrate further comprises:
a recess running through the first metal layer and the passivation layer and being disposed between the through hole structure and the active layer in a direction parallel to the base substrate, in which the first metal layer is disconnected at the recess to form different arts s aced from each other.
2. The array substrate according to claim 1 , wherein a projection of the first metal layer on the base substrate is at least partially overlapped with a projection of the TFT on the base substrate.
3. The array substrate according to claim 1 , wherein the detection unit further includes a bias electrode spaced from the second metal layer, and a semiconductor layer making contact with both the second metal layer and the bias electrode.
4. The array substrate according to claim 1 , wherein a transparent conductive layer is disposed on the second metal layer.
5. The array substrate according to claim 4 , wherein the transparent conductive layer has a thickness greater than that of the second metal layer.
6. The array substrate according to claim 5 , wherein the transparent conductive layer includes any one of indium tin oxide (ITO) or indium zinc oxide (IZO).
7. The array substrate according to claim 1 , wherein a material of the insulating layer is any one of organic resin, silicon nitride or silicon oxide.
8. The array substrate according to claim 7 , wherein a thickness of the insulating layer is 1-4 μm.
9. The array substrate according to claim 1 , wherein a material of the first metal layer and the second metal layer is any one or a combination of molybdenum (Mo), aluminum (Al) or copper (Cu).
10. A sensor, comprising the array substrate according to claim 1 .
11. A detection device, comprising the sensor according to claim 10 .