Semiconductor apparatus and equipment

1. A semiconductor apparatus comprising:

first and second semiconductor layers stacked to each other;

a first structure disposed between the first and second semiconductor layers; and

a second structure disposed between the first structure and the second semiconductor layer, the first and second structures being bonded to each other,

wherein the second semiconductor layer includes an opening, and

wherein in a joint surface between the first and second structures, a portion between the first semiconductor layer and the opening in a first direction in which the first and second semiconductor layers are stacked together includes first and second conductor portions lined up in a second direction orthogonal to the first direction, and an insulator portion surrounding each of the first and second conductor portions to include a portion located between the first and second conductor portions.

2. A semiconductor apparatus comprising:

first and second semiconductor layers stacked to each other;

a first structure disposed between the first and second semiconductor layers; and

a second structure disposed between the first structure and the second semiconductor layer, the first and second structures being bonded to each other,

wherein the second semiconductor layer includes an opening, and

wherein in one of the first and second structures, a portion between the first semiconductor layer and a first portion in a first direction in which the first and second semiconductor layers are stacked together includes first and second conductor portions lined up in a second direction orthogonal to the first direction, and an insulator portion surrounding each of the first and second conductor portions to include a portion located between the first and second conductor portions, and the insulator portion is in contact with an insulator member included in the other of the first and second structures.

3. The semiconductor apparatus according to claim 1 , wherein the first and second conductor portions are included in the second structure.

4. The semiconductor apparatus according to claim 3 , wherein the second conductor portion is in contact with an insulator member included in the first structure.

5. The semiconductor apparatus according to claim 4 , wherein between the first semiconductor layer and the second structure in the first direction, the portion includes a third conductor portion, a fourth conductor portion, and an insulator portion located between the third and fourth conductor portions in the second direction orthogonal to the first direction, and the first conductor portion is bonded to the third conductor portion.

6. The semiconductor apparatus according to claim 5 , wherein the second conductor portion is bonded to the fourth conductor portion, and the insulator portion located between the first and second conductor portions is in contact with the insulator portion located between the third and fourth conductor portions.

7. The semiconductor apparatus according to claim 3 , wherein, in the first structure, wiring is provided between the first semiconductor layer and the opening in the first direction.

8. The semiconductor apparatus according to claim 1 ,

wherein between the first semiconductor layer and the second structure in the first direction, the portion includes a third conductor portion, a fourth conductor portion, and an insulator portion located between the third and fourth conductor portions in the second direction orthogonal to the first direction, and the first conductor portion is bonded to the third conductor portion,

wherein, in the first structure, wiring is provided between the first semiconductor layer and the opening in the first direction, and

wherein the wiring is connected to one of third and fourth conductor portions and is not connected to the other of the third and fourth conductor portions.

9. The semiconductor apparatus according to claim 5 , wherein one of the third and fourth conductor portions is in contact with an insulator member included in the second structure.

10. The semiconductor apparatus according to claim 1 , wherein in the second structure, an electrode is provided between the insulator portion and the opening in the first direction.

11. The semiconductor apparatus according to claim 10 , wherein the electrode is connected to one of the first and second conductor portions and is not connected to the other of the first and second conductor portions.

12. The semiconductor apparatus according to claim 10 , wherein the electrode includes a portion located between the second and first semiconductor layers in the first direction.

13. The semiconductor apparatus according to claim 10 , wherein a width of the electrode in the second direction is smaller than a width of the opening in the second direction.

14. A semiconductor apparatus comprising:

first and second semiconductor layers stacked to each other;

a first structure disposed between the first and second semiconductor layers; and

a second structure disposed between the first structure and the second semiconductor layer, the first and second structures being bonded to each other,

wherein the second semiconductor layer includes an opening,

wherein in a joint surface between the first and second structures, a portion between the first semiconductor layer and the opening in a first direction in which the first and second semiconductor layers are stacked together includes first and second conductor portions lined up in a second direction orthogonal to the first direction, and an insulator portion located between the first and second conductor portions,

wherein the semiconductor apparatus further comprises an electrode provided between the insulator portion and the opening in the first direction,

wherein the second structure includes an insulator member disposed side by side with the electrode in the second direction, and a trench is provided between the electrode and the insulator member, and

wherein a distance between the trench and the first semiconductor layer is smaller than a distance between the electrode and the first semiconductor layer.

15. The semiconductor apparatus according to claim 14 , wherein the trench reaches the first structure.

16. The semiconductor apparatus according to claim 11 , wherein a main component of the electrode is aluminum, and main components of the first and second conductor portions are copper.

17. The semiconductor apparatus according to claim 14 , wherein a conductive member is placed in the opening.

18. The semiconductor apparatus according to claim 1 , wherein the first semiconductor layer is thicker than the second semiconductor layer.

19. The semiconductor apparatus according to claim 1 ,

wherein a photodiode is provided in the second semiconductor layer, and

wherein a transistor is provided in the first semiconductor layer.

20. An equipment comprising:

the semiconductor apparatus according to claim 1 ; and

at least any of an optical system configured to form an image on the semiconductor apparatus, a control apparatus configured to control the semiconductor apparatus, a processing apparatus configured to process a signal output from the semiconductor apparatus, a display apparatus configured to display information obtained by the semiconductor apparatus, a storage apparatus configured to store information obtained by the semiconductor apparatus, and a machine apparatus controlled based on a signal output from the semiconductor apparatus.