Gate cut using selective deposition to prevent oxide loss
Semiconductor devices include a semiconductor fin. A gate stack is formed over the semiconductor fin. Source and drain regions are formed at respective sides of the gate stack. A dielectric line is formed parallel to the gate stack. An interlayer dielectric is formed between the gate stack and the dielectric line. A top surface of the interlayer dielectric between the gate stack and the dielectric line is not recessed.
1. A semiconductor device, comprising:
a semiconductor fin;
a gate stack, formed over the semiconductor fin, that includes a gate dielectric and a gate conductor;
source and drain regions formed at respective sides of the gate stack;
a dielectric liner, formed parallel to the gate stack, that includes a bottom layer, formed from a same material as the gate dielectric layer and a top layer formed from a second dielectric material; and
an interlayer dielectric formed between the gate stack and the dielectric liner, wherein a top surface of the interlayer dielectric between the gate stack and the dielectric liner is not recessed, and wherein the bottom layer of the dielectric liner is formed conformally on the semiconductor fin and on sidewalls of the interlayer dielectric.
2. The semiconductor device of claim 1 , wherein the material of the gate dielectric layer is a high-k dielectric material and wherein the second dielectric material is silicon nitride.
3. The semiconductor device of claim 1 , wherein the bottom layer has sidewalls that have a top surface with a height that is that is lower than a height of a top surface of the top layer.
4. The semiconductor device of claim 2 , wherein the gate conductor is recessed relative to the interlayer dielectric.
5. The semiconductor device of claim 4 , further comprising a self-aligned contact cap over the gate conductor.
6. The semiconductor device of claim 2 , wherein the gate stack further comprises a work function metal layer that encapsulates the gate dielectric.
7. A semiconductor device, comprising:
a semiconductor fin;
a gate stack, formed over the semiconductor fin, that includes a gate dielectric layer and a gate conductor;
source and drain regions formed at respective sides of the gate stack;
a dielectric liner, formed parallel to the gate stack, that includes a bottom layer, formed from a same material as the gate dielectric layer and a top layer formed from a second dielectric material, wherein the bottom layer has sidewalls that have a top surface with a height that is that is lower than a height of a top surface of the top layer; and
an interlayer dielectric, formed between the gate stack and the dielectric liner, wherein a top surface of the interlayer dielectric between the gate stack and the dielectric liner is not recessed.
8. The semiconductor device of claim 7 , wherein the material of the gate dielectric layer is a high-k dielectric material and wherein the second dielectric material is silicon nitride.
9. The semiconductor device of claim 7 , wherein the bottom layer is formed conformally on the semiconductor fin and on sidewalls of the interlayer dielectric.
10. The semiconductor device of claim 7 , wherein the gate conductor is recessed relative to the interlayer dielectric.
11. The semiconductor device of claim 10 , further comprising a self-aligned contact cap over the gate conductor.
12. A semiconductor device, comprising:
a semiconductor fin;
a gate stack, formed over the semiconductor fin, that includes a gate dielectric layer and a gate conductor;
source and drain regions formed at respective sides of the gate stack;
a dielectric liner formed parallel to the gate stack that includes a bottom layer, formed from a same material as the gate dielectric layer and conformally on the semiconductor fin and on sidewalls of the interlayer dielectric, and a top layer, forming from a second dielectric material; and
an interlayer dielectric, formed between the gate stack and the dielectric liner, wherein a top surface of the interlayer dielectric between the gate stack and the dielectric liner is not recessed.
13. The semiconductor device of claim 12 , wherein the material of the gate dielectric layer is a high-k dielectric material and wherein the second dielectric material is silicon nitride.
14. The semiconductor device of claim 12 , wherein the bottom layer has sidewalls that have a top surface with a height that is that is lower than a height of a top surface of the top layer.
15. The semiconductor device of claim 12 , wherein the gate conductor is recessed relative to the interlayer dielectric.
16. The semiconductor device of claim 15 , further comprising a self-aligned contact cap over the gate conductor.