Semiconductor element cleaning solution that suppresses damage to cobalt, and method for cleaning semiconductor element using same
According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.
1. A cleaning solution, comprising:
0.001 to 7% by mass of an alkali metal compound;
0.005 to 35% by mass of a peroxide;
0.005 to 10% by mass of an anticorrosive;
0.000001 to 1% by mass of an alkaline earth metal compound; and
water,
wherein the anticorrosive is at least one substance selected from the group consisting of 1,2-propanediamine, 1,3-propanediamine and 1,4-butanediamine.
2. The cleaning solution according to claim 1 , wherein the alkali metal compound is at least one substance selected from the group consisting of lithium hydroxide, lithium sulfate, lithium carbonate, lithium hydrogen carbonate, lithium nitrate, lithium fluoride, lithium chloride, lithium bromide, lithium iodide, lithium acetate, sodium hydroxide, sodium sulfate, sodium carbonate, sodium hydrogen carbonate, sodium nitrate, sodium fluoride, sodium chloride, sodium bromide, sodium iodide, sodium acetate, potassium hydroxide, potassium sulfate, potassium carbonate, potassium hydrogen carbonate, potassium nitrate, potassium fluoride, potassium chloride, potassium bromide, potassium iodide, potassium acetate, cesium hydroxide, cesium sulfate, cesium carbonate, cesium hydrogen carbonate, cesium nitrate, cesium fluoride, cesium chloride, cesium bromide, cesium iodide and cesium acetate.
3. The cleaning solution according to claim 1 , further comprising at least one substance selected from the group consisting of a calcium compound and a strontium compound.
4. The cleaning solution of claim 1 , wherein the peroxide is at least one substance selected from the group consisting of hydrogen peroxide, m-chloroperoxybenzoic acid, and tert-butyl hydroperoxide.
5. The cleaning solution of claim 1 , wherein the alkaline earth metal compound is barium nitrate.
6. The cleaning solution of claim 1 , wherein the alkaline earth metal compound is a barium compound.
7. A method of removing a dry etching residue from a surface of a semiconductor element, the method comprising contacting the dry etching residue with the cleaning solution according to claim 1 ,
the semiconductor element being obtained by:
forming a hard mask pattern on a substrate comprising
a low dielectric constant film, and
(1) a material comprising cobalt or a cobalt alloy or
(2) a material comprising cobalt or a cobalt alloy and tungsten; and then
dry etching the low dielectric constant film using the hard mask pattern as a mask.
8. A cleaning solution, comprising:
0.001 to 7% by mass of an alkali metal compound;
0.005 to 35% by mass of a peroxide;
0.005 to 10% by mass of an anticorrosive;
0.000001 to 1% by mass of an alkaline earth metal compound; and
water,
wherein the alkaline earth metal compound is barium sulfate.
9. The cleaning solution according to claim 8 , wherein the alkali metal compound is at least one substance selected from the group consisting of lithium hydroxide, lithium sulfate, lithium carbonate, lithium hydrogen carbonate, lithium nitrate, lithium fluoride, lithium chloride, lithium bromide, lithium iodide, lithium acetate, sodium hydroxide, sodium sulfate, sodium carbonate, sodium hydrogen carbonate, sodium nitrate, sodium fluoride, sodium chloride, sodium bromide, sodium iodide, sodium acetate, potassium hydroxide, potassium sulfate, potassium carbonate, potassium hydrogen carbonate, potassium nitrate, potassium fluoride, potassium chloride, potassium bromide, potassium iodide, potassium acetate, cesium hydroxide, cesium sulfate, cesium carbonate, cesium hydrogen carbonate, cesium nitrate, cesium fluoride, cesium chloride, cesium bromide, cesium iodide and cesium acetate.
10. The cleaning solution according to claim 8 , wherein the anticorrosive is at least one substance selected from the group consisting of 2-aminoethanol, 2-methylaminoethanol, 1-amino-2-propanol and 1-amino-3-propanol.
11. The cleaning solution according to claim 8 , wherein the anticorrosive is at least one substance selected from the group consisting of pyrazole and 3,5-dimethylpyrazole.
12. The cleaning solution according to claim 8 , further comprising at least one substance selected from the group consisting of a calcium compound and a strontium compound.
13. The cleaning solution of claim 8 , wherein the anticorrosive is at least one substance selected from the group consisting of a diamine compound, an alkanolamine compound, a pyrazole compound, an imidazole compound and a triazole compound.
14. The cleaning solution of claim 13 , wherein the imidazole compound is at least one substance selected from the group consisting of 1-methylimidazole, 1-vinylimidazole and 5-methylbenzimidazole.
15. The cleaning solution of claim 13 , wherein the triazole compound is at least one substance selected from the group consisting of 1,2,4-triazole, 1,2,3-triazole and 5-methyl-1H-benzotriazole.
16. The cleaning solution of claim 8 , wherein the peroxide is at least one substance selected from the group consisting of hydrogen peroxide, m-chloroperoxybenzoic acid, and tert-butyl hydroperoxide.
17. A method of removing a dry etching residue from a surface of a semiconductor element, the method comprising contacting the dry etching residue with the cleaning solution according to claim 8 ,
the semiconductor element being obtained by:
forming a hard mask pattern on a substrate comprising
a low dielectric constant film, and
(1) a material comprising cobalt or a cobalt alloy or
(2) a material comprising cobalt or a cobalt alloy and tungsten; and then
dry etching the low dielectric constant film using the hard mask pattern as a mask.