Method of manufacturing ruthenium wiring
A first aspect of the present disclosure provides a ruthenium wiring manufacturing method of manufacturing a ruthenium wiring by filling a recess, with respect to a substrate including a predetermined film having the recess formed in a surface thereof. The method includes: embedding a first ruthenium film in the recess by forming the first ruthenium film by CVD using a ruthenium raw material gas; forming an additional layer by forming a second ruthenium film on the first ruthenium film embedded in the recess by CVD using the ruthenium raw material gas at a film forming rate higher than that at a time of embedding; and flattening the second ruthenium film and the first ruthenium film by removing the second ruthenium film and the first ruthenium film on the substrate surface by CMP.
1. A method of manufacturing a ruthenium wiring on a substrate including a predetermined film having a recess formed in a surface thereof by filling the recess, the method comprising:
depositing a first ruthenium film in the recess and on the surface by forming the first ruthenium film by CVD using a ruthenium raw material gas so that the first ruthenium film fills the recess and cover the surface;
forming an additional layer by forming a second ruthenium film on the first ruthenium film deposited in the recess and on the surface by CVD using the ruthenium raw material gas at a film forming rate higher than a film forming rate at a time of depositing the first ruthenium film; and
flattening the second ruthenium film and the first ruthenium film by removing the second ruthenium film and the first ruthenium film on the substrate surface by CMP.
2. The method of claim 1 , wherein, when forming the second ruthenium film in the forming the additional layer, the film forming rate is set to be higher than the film forming rate of the first ruthenium film through an adjustment of a process parameter value when forming the first ruthenium film.
3. The method of claim 2 , wherein, when forming the second ruthenium film in the forming the additional layer, the film forming rate is increased by at least one of increasing a film forming temperature, increasing an amount of supply of a raw material gas, reducing a processing pressure, and increasing a gap between the substrate and a gas discharge surface as the adjustment of the process parameter value.
4. The method of claim 1 , further comprising performing an annealing treatment in a hydrogen-containing atmosphere before the performing the flattening.
5. The method of claim 1 , wherein, when forming the formation of the second ruthenium film in the forming the additional layer, the film forming rate is set to be higher than a film forming rate of the first ruthenium film by adding a hydrogen-containing reducing gas.
6. The method of claim 5 , wherein the hydrogen-containing reducing gas is at least one of H 2 gas, NH 3 gas, and SiH 4 gas.
7. The method of claim 1 , further comprising forming a base film in the recess before forming the first ruthenium film.
8. The method of claim 7 , wherein the base film is any one of a TiN film, a Ta film, a TaN film, a TaAlN film, and a TiON film.
9. The method of claim 1 , wherein the first ruthenium film and the second ruthenium film are formed using ruthenium carbonyl as the ruthenium raw material gas.
10. The method of claim 9 , wherein a processing temperature when forming the first ruthenium film and the second ruthenium film is in a range of 120° C. to 300° C.
11. The method of claim 9 , wherein a pressure when forming the first ruthenium film and the second ruthenium film is in a range of 0.013 Pa to 133.33 Pa.
12. A method of manufacturing a ruthenium wiring on a substrate including a predetermined film having a recess formed in a surface thereof by filling the recess, the method comprising:
depositing a first ruthenium film in the recess and on the surface by forming the first ruthenium film by CVD using a ruthenium raw material gas so that the first ruthenium film fills the recess and cover the surface;
forming an additional layer by forming a second ruthenium film on the first ruthenium film deposited in the recess and on the surface by CVD in which a hydrogen-containing reducing gas is added to the ruthenium raw material gas at a film forming rate higher than a film forming rate at a time of depositing the first ruthenium film; and
flattening the second ruthenium film and the first ruthenium film by removing the second ruthenium film and the first ruthenium film on the substrate surface by CMP.
13. The method of claim 12 , wherein the hydrogen-containing reducing gas is at least one of H 2 gas, NH 3 gas, and SiH 4 gas.
14. The method of claim 12 , wherein, when forming the second ruthenium film in the forming the additional layer, the film forming rate is set to be higher than a film forming rate of the first ruthenium film through an adjustment a process parameter value when forming the first ruthenium film.
15. The method of claim 14 , wherein, when forming the second ruthenium film in the forming the additional layer, the film forming rate is increased by at least one of increasing a film forming temperature, increasing an amount of supply of a raw material gas, reducing a processing pressure, and increasing a gap between the substrate and a gas discharge surface, as the adjustment of the process parameter value.