Product that includes a plurality of vertical transistors with a shared conductive gate plug
The present disclosure is directed to various embodiments of a product that includes first and second vertical semiconductor structures for first and second, respectively, vertical transistor devices, and first and second gate structures positioned adjacent the first and second, respectively, vertical semiconductor structures. The product also includes a shared conductive gate plug positioned laterally between the first gate structure and the second gate structure, wherein the shared conductive gate plug is conductively coupled to both the first gate structure and the second gate structure.
1. A product, comprising:
a first vertical semiconductor structure;
a first bottom source/drain region positioned adjacent the first vertical semiconductor structure;
a second vertical semiconductor structure;
a second bottom source/drain region positioned adjacent the second vertical semiconductor structure;
a bottom spacer positioned above the first and second bottom source/drain regions; and
a shared conductive gate plug positioned laterally between the first gate structure and the second gate structure, the shared conductive gate plug being conductively coupled to both the first gate structure and the second gate structure.
2. The product of claim 1 , wherein the first vertical semiconductor structure is a portion of a first vertical transistor device and wherein the second vertical semiconductor structure is a portion of a second vertical transistor device.
3. The product of claim 2 , wherein the first vertical transistor device is an N-type device and the second vertical transistor device is a P-type device.
4. The product of claim 1 , wherein materials of construction for the first gate structure and the second gate structure are the same.
5. The product of claim 1 , wherein the first gate structure comprises a first work-function material layer and the second gate structure comprises a second work-function material layer that is different from the first work-function material layer.
6. The product of claim 1 , further comprising an isolation break positioned vertically below at least a portion of the shared conductive gate plug and laterally between the first bottom source/drain region and the second bottom source/drain region, wherein the isolation break comprises an insulating material.
7. The product of claim 1 , further comprising:
a first top source/drain region positioned on an upper surface of the first vertical semiconductor structure; and
a second top source/drain region positioned on an upper surface of the second vertical semiconductor structure.
8. The product of claim 7 , further comprising first and second cap layers positioned above the first and second top source/drain regions, respectively.
9. The product of claim 5 , wherein one or both of the first and second work-function material layers comprises a stack of layers.
10. A product, comprising:
a first vertical semiconductor structure;
a first bottom source/drain region positioned adjacent the first vertical semiconductor structure;
a first top source/drain region positioned on an upper surface of the first vertical semiconductor structure;
a second vertical semiconductor structure;
a second bottom source/drain region positioned adjacent the second vertical semiconductor structure;
a second top source/drain region positioned on an upper surface of the second vertical semiconductor structure;
a bottom spacer positioned above the first and second bottom source/drain regions;
a shared conductive gate plug positioned laterally between the first gate structure and the second gate structure, the shared conductive gate plug being conductively coupled to both the first gate structure and the second gate structure; and
an isolation break positioned vertically below at least a portion of the shared conductive gate plug and laterally between the first bottom source/drain region and the second bottom source/drain region, wherein the isolation break comprises an insulating material.
11. The product of claim 10 , wherein the first vertical semiconductor structure is a portion of a first vertical transistor device and wherein the second vertical semiconductor structure is a portion of a second vertical transistor device.
12. The product of claim 11 , wherein the first vertical transistor device is an N-type device and the second vertical transistor device is a P-type device.
13. The product of claim 10 , wherein materials of construction for the first gate structure and the second gate structure are the same.
14. The product of claim 10 , wherein the first gate structure comprises a first work-function material layer and the second gate structure comprises a second work-function material layer that is different from the first work-function material layer.
15. The product of claim 14 , wherein one or both of the first and second work-function material layers comprises a stack of layers.
16. A product, comprising:
an N-type vertical transistor device, comprising:
a first vertical semiconductor structure;
a first bottom source/drain region positioned adjacent the first vertical semiconductor structure; and
a first top source/drain region positioned on an upper surface of the first vertical semiconductor structure;
a P-type vertical transistor device, comprising:
a second vertical semiconductor structure;
a second bottom source/drain region positioned adjacent the second vertical semiconductor structure; and
a second top source/drain region positioned on an upper surface of the second vertical semiconductor structure;
a bottom spacer positioned above the first and second bottom source/drain regions; and
a shared conductive gate plug positioned laterally between the first gate structure and the second gate structure, the shared conductive gate plug being conductively coupled to both the first gate structure and the second gate structure.
17. The product of claim 16 , wherein materials of construction for the first gate structure and the second gate structure are different.
18. The product of claim 16 , wherein the first gate structure comprises a first work-function material layer and the second gate structure comprises a second work-function material layer that is different from the first work-function material layer.
19. The product of claim 16 , further comprising an isolation break positioned vertically below at least a portion of the shared conductive gate plug and laterally between the first bottom source/drain region and the second bottom source/drain region, wherein the isolation break comprises an insulating material.
20. The product of claim 18 , wherein one or both of the first and second work-function material layers comprises a stack of layers.