Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
1. A method of manufacturing a semiconductor device, comprising:
supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performing:
(a) supplying an inert gas at a first inert gas flow rate from a first nozzle extending along an arrangement direction of the plurality of substrates into the process chamber;
(b) supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber; and
(c) supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas;
stopping supply of the precursor gas;
removing the precursor gas remaining in the process chamber;
supplying a reaction gas from a second nozzle into the process chamber; and
removing the reaction gas remaining in the process chamber.
2. The method of claim 1 , wherein the plurality of substrates are stacked in the process chamber,
wherein the precursor gas is caused to flow through the first nozzle from one end to the other end in the act of supplying the precursor gas, and
wherein the process chamber is evacuated from the one end side which is the upstream side of the flow of the precursor gas from the first nozzle.
3. The method of claim 2 , wherein a supply concentration of the precursor gas is adjusted by changing an evacuation rate of the process chamber and the first inert gas flow rate and the second inert gas flow rate.
4. The method of claim 1 , wherein in (a), evacuation of the process chamber is substantially stopped.
5. The method of claim 1 , wherein in (b), evacuation of the process chamber is substantially stopped.
6. The method of claim 1 , wherein in (a), a valve for evacuating the process chamber is fully closed.
7. The method of claim 1 , wherein in (a), a valve for evacuating the process chamber is opened so that F>V when the first inert gas flow rate is F sccm and an evacuation rate of the process chamber per unit time is V sccm.
8. The method of claim 4 , wherein in (a), a valve for evacuating the process chamber is opened so that an evacuation rate of the process chamber per unit time is 10% or less of the first inert gas flow rate.
9. A non-transitory computer-readable recording medium storing a program that causes a computer to have a substrate processing apparatus perform a process, the process comprising:
supplying a precursor gas stored in a reservoir part into a process chamber in which a plurality of substrates are arranged and accommodated by sequentially performing:
supplying an inert gas at a first inert gas flow rate from a first nozzle into the process chamber in a state in which evacuation of the process chamber is substantially stopped in a substrate processing apparatus;
supplying the inert gas at a second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying the precursor gas from the first nozzle into the process chamber in a state in which evacuation of the process chamber is substantially stopped; and
supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber in a state in which the process chamber is evacuated from one end side which is an upstream side of a flow of the precursor gas, and stopping supply of the precursor gas;
removing the precursor gas remaining in the process chamber;
supplying a reaction gas from a second nozzle into the process chamber; and
removing the reaction gas remaining in the process chamber.