Chip handling and electronic component integration
Small size chip handling and electronic component integration are accomplished using handle fixturing to transfer die or other electronic components from a full area array to a targeted array. Area array dicing of a thinned device wafer on a handle wafer/panel may be followed by selective or non-selective de-bonding of targeted die or electronic components from the handle wafer and optional attachment to a carrier such as a transfer head or tape. Alignment fiducials may facilitate precision alignment of the transfer head or tape to the device wafer and subsequently to the targeted array. Alternatively, the dies or other electronic elements are transferred selectively from either a carrier or the device wafer to the targeted array.
1. A method for integrating electronic elements into an electronic package assembly, comprising:
obtaining a carrier including a handle and a release layer on a first surface of the handle;
attaching a plurality of singulated electronic elements to the carrier such that the release layer is between the electronic elements and the first surface of the handle;
aligning the carrier with an electronic package assembly including bonding sites thereon;
directing electromagnetic radiation through the handle, thereby causing ablation of discrete, selected portions of the release layer beneath a first targeted plurality of the singulated electronic elements attached to the carrier;
removing portions or all of the release layer between the singulated electronic elements prior to causing ablation of the discrete, selected portions of the release layer beneath the first targeted plurality of the singulated electronic elements; and
integrating the first targeted plurality of the singulated electronic elements into the electronic package assembly at a targeted plurality of the bonding sites.
2. The method of claim 1 , further including:
obtaining a semiconductor structure including a device wafer comprising an array of the singulated electronic elements, a handle wafer, and an ablatable layer, the device wafer being bonded to the handle wafer, and the ablatable layer being positioned between the device wafer and the handle wafer;
contacting the carrier with the device wafer;
directing electromagnetic radiation through the handle wafer, thereby causing ablation of the ablatable layer, and
attaching the singulated electronic elements to the carrier.
3. The method of claim 2 , wherein the first surface of the handle between the release layer and the attached plurality of electronic elements is entirely planar.
4. The method of claim 1 , further including:
aligning the carrier with a second electronic package assembly, the second electronic package assembly including bonding sites thereon;
directing electromagnetic radiation through the handle of the carrier, thereby causing ablation of discrete, selected portions of the release layer beneath a second targeted plurality of the singulated electronic elements attached to the carrier, and
integrating the second targeted plurality of the singulated electronic elements into the second electronic package assembly at a second targeted plurality of the bonding sites on the second electronic package assembly.
5. A method for integrating electronic elements into an electronic package assembly, comprising:
obtaining a semiconductor structure including a device wafer comprising an array of singulated electronic elements, a handle wafer, and a release layer, the device wafer being bonded to the handle wafer, and the release layer being positioned between the device wafer and the handle wafer;
aligning the semiconductor structure with an electronic package assembly such that a targeted plurality of the singulated electronic elements are aligned with a plurality of targeted bonding sites of the electronic package assembly;
causing the semiconductor structure to contact the electronic package assembly;
directing electromagnetic radiation through the handle wafer following contact of the semiconductor structure with the electronic package assembly, thereby causing ablation of discrete, selected portions of the release layer beneath the targeted plurality of the singulated electronic elements;
removing portions of the release layer between the singulated electronic elements prior to causing ablation of the discrete, selected portions of the release layer beneath the targeted plurality of the singulated electronic elements; and
bonding the targeted plurality of singulated electronic elements to the targeted bonding sites of the electronic package assembly.
6. The method of claim 5 , wherein obtaining the semiconductor structure includes dicing the device wafer on the handle wafer, thereby forming the array of the singulated electronic elements, and
further wherein bonding the targeted plurality of the singulated electronic elements to the targeted bonding sites of the electronic package assembly is conducted prior to ablation of the discrete, selected portions of the release layer.
7. The method of claim 6 , wherein the targeted bonding sites comprise solder bumps and bonding the targeted plurality of the singulated electronic elements to the targeted bonding sites of the electronic package assembly further includes reflowing the solder bumps.
8. The method of claim 5 , wherein the targeted bonding sites comprise solder bumps and bonding the targeted plurality of the singulated electronic elements to the targeted bonding sites of the electronic package assembly further includes reflowing the solder bumps.
9. The method of claim 7 , wherein integrating the first targeted plurality of the singulated electronic elements into the electronic package assembly at a targeted plurality of the bonding sites further includes reflowing a plurality of solder bumps on the first targeted plurality of the singulated electronic elements.