Auto-calibration to a station of a process module that spins a wafer

1. A method for determining a temperature induced offset in a pedestal of a process module under a temperature condition for a process, comprising:

delivering a wafer to the pedestal of the process module by a robot, and detecting an entry offset;

rotating the wafer over the pedestal by an angle;

removing the wafer from the pedestal by the robot and measuring an exit offset;

determining a magnitude and direction of the temperature induced offset using the entry offset and the exit offset;

defining a calibrated reference measurement within a reference coordinate system based on an initial calibrated location of the pedestal within the process module, wherein the entry offset is measured from the calibrated reference measurement, wherein the exit offset is measured from the calibrated reference measurement; and

determining a temperature correction of a center of the pedestal based on the temperature induced offset corresponding to an offset of the center of the pedestal from the initial calibrated location when the process module is under the temperature condition.

2. The method of claim 1 , further comprising:

wherein the detecting an entry offset includes determining a first measurement of the wafer within the reference coordinate system using a measurement device that is fixed within the reference coordinate system; and

wherein the measuring an exit offset includes determining a second measurement of the wafer within the reference coordinate system using the measurement device.

3. The method of claim 1 , further comprising:

when no condition is applied to the process module, calibrating the robot to the initial calibrated location corresponding to the center of the pedestal, the reference coordinate system being based on the initial calibrated location;

placing a calibration wafer centered to the pedestal;

removing the calibration wafer from the pedestal using the robot; and

defining the calibrated reference measurement of the calibration wafer within the reference coordinate system using a measurement device that is fixed within the reference coordinate system, the calibrated reference measurement being aligned with the initial calibrated location.

4. The method of claim 1 , wherein the determining a temperature correction includes:

determining a difference vector between the entry offset and the exit offset; and

halving a magnitude of the difference vector to determine the temperature induced offset of the center of the pedestal from the initial calibrated location.

5. The method of claim 1 , wherein the rotating the wafer includes:

placing the wafer on a lift pad configured to separate from the pedestal and rotate with respect to the pedestal;

separating the lift pad from the pedestal along a rotation axis; and

rotating the lift pad relative to the pedestal between at least a first angular orientation and a second angular orientation defining the angle.

6. A method for calibration, comprising:

establishing a reference coordinate system based on an initial calibrated location of a rotation axis of a rotation device within a process module;

applying a condition to the process module;

picking up a calibration wafer from an inbound load lock using a transfer module (TM) robot configured to transfer the calibration wafer to the process module;

determining a first measurement of the calibration wafer within the reference coordinate system using a measurement device when transferring the calibration wafer to the process module, the measurement device fixed within the reference coordinate system;

handing off the calibration wafer to the process module;

interfacing the calibration wafer with the rotation device;

rotating the calibration wafer by an angle using the rotation device;

removing the calibration wafer from the process module using the TM robot;

determining a second measurement of the calibration wafer within the reference coordinate system using the measurement device when transferring the calibration wafer to an outbound load lock; and

determining a condition correction of the rotation axis based on the first measurement and the second measurement, the condition correction corresponding to an offset of the rotation axis from the initial calibrated location when the process module is under the condition.

7. The method of claim 6 , wherein the determining a condition correction includes:

determining a difference vector between the first measurement and the second measurement; and

halving a magnitude of the difference vector to determine the offset of the rotation axis from the initial calibrated location.

8. The method of claim 6 , wherein the applying a condition includes performing at least one of the following operations:

bringing the process module to a process temperature; or

applying a vacuum to the process module.

9. The method of claim 6 , wherein the establishing a reference coordinate system includes:

when no condition is applied to the process module, calibrating the TM robot to the initial calibrated location;

placing the calibration wafer within the rotation device and centered to the rotation axis;

removing the calibration wafer from the process module using the TM robot; and

establishing a calibrated reference measurement of the calibration wafer within the reference coordinate system using the measurement device, the calibrated reference measurement being aligned with the initial calibrated location of the rotation axis.

10. The method of claim 6 , wherein the rotating the calibration wafer by an angle includes:

placing the calibration wafer on a lift pad of the rotation device, the rotation device interfacing with a pedestal having a pedestal top surface extending from a central axis of the pedestal, the lift pad configured to rest upon the pedestal top surface or be separated from the pedestal top surface;

separating the lift pad from the pedestal top surface along the central axis; and

rotating the lift pad relative to the pedestal top surface between at least a first angular orientation and a second angular orientation defining the angle.

11. The method of claim 10 , wherein the angle ranges from greater than 0 degrees to less than or equal to 180 degrees.

12. The method of claim 10 , wherein a diameter of the lift pad is approximately sized to a wafer diameter.

13. The method of claim 10 , wherein a diameter of the lift pad is smaller than a wafer diameter.

14. The method of claim 6 , wherein the rotating the calibration wafer by the angle includes:

picking up the calibration wafer from a first station in the process module using an end effector of a spindle robot, the spindle robot configured for transferring wafers between stations in the process module, wherein the end effector is configured for rotating the calibration wafer; and

placing the calibration wafer after rotation on the first station for removal from the process module.

15. A method for calibration, comprising:

establishing a reference coordinate system based on an initial calibrated location of a rotation axis of a rotation device within a process module;

establishing a calibrated reference measurement of a calibration wafer within the reference coordinate system using a measurement device fixed within the reference coordinate system when transferring the calibration wafer from the process module from the initial calibrated location using a transfer module (TM) robot, the calibration wafer placed to be centered about the rotation axis such that the calibrated reference measurement is aligned with the initial calibrated location of the rotation axis;

determining a condition correction of the rotation axis corresponding to an offset of the rotation axis from the initial calibrated location when the process module is under a condition based on a rotation of the calibration wafer by an angle about the rotation axis using the rotation device within the process module;

picking up a process wafer from an inbound load lock using the (TM) robot;

determining an alignment measurement of the process wafer within the reference coordinate system using the measurement device when transferring the process wafer to the process module;

determining an alignment correction of the process wafer corresponding to an offset of the process wafer from the calibrated reference measurement based on the alignment measurement;

applying the condition correction to the process wafer using the TM robot;

applying the alignment correction using the TM robot to align the process wafer to the rotation axis that is offset from the initial calibrated location.

16. The method of claim 15 , further comprising:

handing off the process wafer to the process module for processing.

17. The method of claim 15 , wherein the establishing the calibrated reference measurement includes:

when no condition is applied to the process module, calibrating the TM robot to the initial calibrated location;

placing the calibration wafer within the rotation device and centered to the rotation axis; and

removing the calibration wafer from the process module using the TM robot.

18. The method of claim 15 , wherein the determining the condition correction includes:

applying the condition to the process module;

picking up the calibration wafer from the inbound load lock using the TM robot configured to transfer the calibration wafer to the process module;

determining a first measurement of the calibration wafer within the reference coordinate system using the measurement device when transferring the calibration wafer to the process module;

handing off the calibration wafer to the process module;

interfacing the calibration wafer with the rotation device;

rotating the calibration wafer by the angle using the rotation device;

removing the calibration wafer from the process module using the TM robot;

determining a second measurement of the calibration wafer within the reference coordinate system using the measurement device when transferring the calibration wafer to an outbound load lock; and

determining the condition correction of the rotation axis based on the first measurement and the second measurement.

19. The method of claim 18 , wherein the rotating the calibration wafer by the angle includes:

placing the calibration wafer on a lift pad of the rotation device, the rotation device interfacing with a pedestal having a pedestal top surface extending from a central axis of the pedestal, the lift pad configured to rest upon the pedestal top surface or be separated from the pedestal top surface;

separating the lift pad from the pedestal top surface along the central axis; and

rotating the lift pad relative to the pedestal top surface between at least a first angular orientation and a second angular orientation defining the angle.

20. The method of claim 19 , wherein the angle ranges from greater than 0 degrees to less than or equal to 180 degrees.

21. The method of claim 19 , wherein the rotating the calibration wafer by the angle includes:

picking up the calibration wafer from a first station in the process module using an end effector of a spindle robot, the spindle robot configured for transferring wafers between stations in the process module, wherein the end effector is configured for rotating the calibration wafer; and

placing the calibration wafer after rotation on the first station for removal from the process module.

22. The method of claim 19 , wherein the determining the condition correction includes:

determining a difference vector between the first measurement and the second measurement; and

halving a magnitude of the difference vector to determine the offset of the rotation axis from the initial calibrated location, wherein the offset of the rotation axis corresponds to the condition correction.

23. The method of claim 19 , further comprising:

applying the condition to the process module including performing at least one of the following operations of bringing the process module to a process temperature, or applying a vacuum to the process module.