Supporting InFO packages to reduce warpage
A method includes encapsulating a first device die and a second device die in an encapsulating material, forming redistribution lines over and electrically coupling to the first device die and the second device die, and bonding a bridge die over the redistribution lines to form a package, with the package including the first device die, the second device die, and the bridge die. The bridge die electrically inter-couples the first device die and the second device die. The first device die, the second device die, and the bridge die are supported with a dummy support die.
1. A method comprising:
encapsulating a first device die and a second device die in an encapsulating material;
forming redistribution lines over the first device die and the second device die;
forming electrical connectors overlying and electrically coupling to the first device die and the second device die through the redistribution lines;
performing a singulation on the encapsulating material, wherein the first device die and the second device die are sawed into a package; and
attaching the package to a dummy support die, wherein the dummy support die extends beyond edges of the package in each of four lateral directions.
2. The method of claim 1 further comprising bonding a bridge die to the package, wherein the bridge die is on an opposite side of the redistribution lines than the first device die and the second device die.
3. The method of claim 2 , wherein the dummy support die is bonded to have a first portion overlapped by the first device die, and a second portion overlapped by the second device die.
4. The method of claim 1 , wherein the dummy support die is a homogeneous semiconductor die.
5. The method of claim 1 , wherein the dummy support die is a homogeneous metal die.
6. The method of claim 1 , wherein the dummy support die extends beyond the edges of the package in each of four lateral directions by distances in a range between about 50 μm and about 100 μm.
7. A method comprising:
adhering a blank die to a package through an adhesive film, wherein the package comprises:
a first device die;
a second device die;
an encapsulating material encapsulating the first device die and the second device die therein, wherein opposite sides of the adhesive film are in physical contact with the encapsulating material and the blank die; and
a plurality of redistribution lines over and electrically coupling to the first device die and the second device die; and
bonding a package component to the package, wherein the blank die and the package component are located on opposite sides of the package.
8. The method of claim 7 further comprising:
bonding a bridge die, with a first portion of the bridge die being overlapping and bonded to the first device die, and a second portion of the bridge die being overlapping and bonded to the second device die.
9. The method of claim 7 further comprising sawing the package from a reconstructed wafer comprising a plurality of packages identical to the package, and wherein the blank die is adhered to the package after the sawing.
10. The method of claim 7 , wherein the blank die is a blank silicon die.
11. The method of claim 7 , wherein the adhesive film is separated from the first device die by a die attach film.
12. The method of claim 7 , wherein the blank die is a homogeneous metal die.
13. The method of claim 7 , wherein the blank die is a homogeneous dielectric die.
14. A method comprising:
encapsulating a first device die and a second device die in an encapsulating material;
forming redistribution lines over the first device die and the second device die;
forming electrical connectors overlying and electrically coupling to the first device die and the second device die through the redistribution lines;
performing a singulation on the encapsulating material, wherein the first device die and the second device die are sawed into a package; and
attaching the package to a dummy support die, wherein in a top view of the package, the package is elongated and comprises a long edge and a short edge perpendicular to, and shorter than, the long edge, and the dummy support die extends beyond the short edge, and has edges flush with the long edge.
15. The method of claim 14 further comprising bonding a bridge die to the package, wherein the bridge die is on an opposite side of the redistribution lines than the first device die and the second device die.
16. The method of claim 14 , wherein the dummy support die comprises a first portion overlapped by the first device die, and a second portion overlapped by the second device die.
17. The method of claim 14 , wherein the dummy support die extends beyond the short edge by a distance in a range between about 50 μm and about 100 μm.
18. The method of claim 14 , wherein the dummy support die is a homogeneous semiconductor die.
19. The method of claim 14 , wherein the dummy support die is a homogeneous metal die.
20. The method of claim 14 , wherein the dummy support die is a homogeneous dielectric die.