Solid state imaging device and imaging apparatus with pixel column having multiple output lines
The present technology relates to a solid state imaging device capable of providing a solid state imaging device that does not cause deterioration of image quality due to an increase in reading speed of a pixel signal, and an imaging apparatus. In a pixel array block in which a plurality of pixels are two-dimensionally arrayed, each of the pixels including: a photoelectric conversion device; a plurality of transistors to be used for reading a signal from the photoelectric conversion device; and wiring for driving the transistors, a plurality of pixel output lines are provided for each one column of the plurality of pixels two-dimensionally arrayed, and the plurality of pixel output lines from the pixels are arranged separately in a plurality of wiring layers. The present technology can be applied to, for example, a CMOS image sensor.
1. An imaging device, comprising:
a pixel array block in which a plurality of pixels are two-dimensionally arrayed in rows and columns, each of the pixels including: a photoelectric conversion device; a plurality of transistors reading a signal from the photoelectric conversion device; and wiring for driving the plurality of transistors, wherein,
in the pixel array block, a plurality of pixel output lines are provided for each of the columns and the plurality of pixel output lines are arranged separately in a plurality of wiring layers,
wherein a pixel output line of the plurality of pixel output lines that is arranged in a position closest to a wiring of a floating diffusion is arranged in a different wiring layer from a wiring layer of the wiring of the floating diffusion, and
wherein a column signal is generated from the plurality of pixel output lines at a same time in parallel for each pixel output line of the plurality of pixel output lines.
2. The imaging device according to claim 1 , wherein
adjacent pixel output lines of the plurality of pixel output lines are respectively arranged in different wiring layers.
3. The imaging device according to claim 2 , wherein
the adjacent pixel output lines are respectively arranged to be switched alternately in a first wiring layer and a second wiring layer.
4. The imaging device according to claim 3 , further comprising
structure in which, between the first wiring layer and the second wiring layer in which the plurality of pixel output lines are arranged, a third wiring layer is sandwiched.
5. The imaging device according to claim 4 , wherein
shield wiring is arranged in the third wiring layer.
6. The imaging device according to claim 1 , wherein
power supply wiring or ground wiring and the plurality of pixel output lines are arranged in a first wiring layer to be in the same direction in a vertical direction or a horizontal direction, and are arranged in a direction perpendicular to given wiring arranged in a second wiring layer in which the plurality of pixel output lines are not arranged.
7. The imaging device according to claim 1 , wherein
dummy wiring is arranged in a periphery of the plurality of pixel output lines respectively arranged in different wiring layers, in order to make load capacitance of the plurality of pixel output lines uniform.
8. The imaging device according to claim 1 , wherein
intervals between the plurality of pixel output lines are different from each other for each wiring layer in which the plurality of pixel output lines are arranged.
9. The imaging device according to claim 1 , wherein
the plurality of pixel output lines are respectively wired to be switched alternately in different wiring layers via a contact.
10. The imaging device according to claim 9 , wherein
a cycle of switching of wiring is changed such that wiring layers of adjacent pixel output lines of the plurality of pixel output lines are different from each other.
11. The imaging device according to claim 3 , wherein
shield wiring is arranged between the wiring layer of the pixel output line arranged in the position closet to the wiring of the floating diffusion and the wiring layer of the wiring of the floating diffusion.
12. The imaging device according to claim 1 , wherein
each of the plurality of pixel output lines for each column is respectively arranged separately in different wiring layers.
13. The imaging device according to claim 1 , wherein at least two of columns have the column signals that are generated at a same time in parallel for at least two of the plurality of pixel output lines that are arranged separately in different layers of the plurality of wiring layers.
14. An imaging apparatus, comprising:
an imaging device mounted on the imaging apparatus, the imaging device comprising:
a pixel array block in which a plurality of pixels are two-dimensionally arrayed in rows and columns, each of the plurality of pixels including: a photoelectric conversion device; a plurality of transistors reading a signal from the photoelectric conversion device; and
wiring for driving the plurality of transistors, wherein, in the pixel array block, a plurality of pixel output lines are provided for each of the columns and the plurality of pixel output lines are arranged separately in a plurality of wiring layers,
wherein a pixel output line of the plurality of pixel output lines that is arranged in a position closest to a wiring of a floating diffusion is arranged in a different wiring layer from a wiring layer of the wiring of the floating diffusion, and
wherein a column signal is generated from the plurality of pixel output lines at a same time in parallel for each pixel output line in the plurality of pixel output lines.