Semiconductor device and method of forming microelectromechanical systems (MEMS) package
A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.
1. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
disposing a modular interconnect structure adjacent to the first semiconductor die;
depositing a first encapsulant between the first semiconductor die and modular interconnect structure;
forming a build-up interconnect structure over the first encapsulant and modular interconnect structure, wherein the build-up interconnect structure includes an opening; and
disposing a second semiconductor die including a microelectromechanical device over the first semiconductor die, wherein the second semiconductor die is mounted to the build-up interconnect structure over the opening.
2. The method of claim 1 , further including disposing the second semiconductor die over the first semiconductor die with an exposed back surface of the second semiconductor die oriented away from the first semiconductor die.
3. The method of claim 1 , further including depositing a second encapsulant over the second semiconductor die prior to disposing the second semiconductor die over the first semiconductor die.
4. The method of claim 1 , further including:
providing a wirebond semiconductor package comprising the second semiconductor die; and
disposing the second semiconductor die over the first semiconductor die as part of the wirebond semiconductor package.
5. The method of claim 4 , further including providing the wirebond semiconductor package including a lid.
6. A method of making a semiconductor device, comprising:
providing a first semiconductor die; depositing a first encapsulant around the first semiconductor die;
forming a build-up interconnect structure over the first semiconductor die and first encapsulant after depositing the encapsulant, wherein the build-up interconnect structure includes an opening; and
disposing a second semiconductor die including a microelectromechanical device over the first semiconductor die with the build-up interconnect structure over the opening between the first semiconductor die and second semiconductor die.
7. The method of claim 6 , wherein the second semiconductor die is a bare die.
8. The method of claim 6 , wherein the second semiconductor die is coupled to the first semiconductor die through a bond wire.
9. The method of claim 6 , further including providing a semiconductor package including the second semiconductor die.
10. The method of claim 9 , wherein the semiconductor package includes a lid.
11. The method of claim 9 , wherein the semiconductor package includes a second encapsulant deposited around the second semiconductor die.
12. A semiconductor device, comprising:
a first semiconductor die;
a modular interconnect structure disposed adjacent to the first semiconductor die;
a first encapsulant deposited between the first semiconductor die and modular interconnect structure;
a first build-up interconnect structure formed directly on the modular interconnect structure and first encapsulant;
a second semiconductor die including a microelectromechanical device disposed over the first semiconductor die with the first build-up interconnect structure disposed between the first semiconductor die and second semiconductor die;
a second encapsulant deposited over the second semiconductor die; and
a second build-up interconnect structure formed over the second semiconductor die and second encapsulant, wherein the second build-up interconnect structure is coupled to the first build-up interconnect structure by a conductive bump.
13. The semiconductor device of claim 12 , wherein an exposed back surface of the second semiconductor die is oriented away from the first semiconductor die.
14. The semiconductor device of claim 12 , further including a wirebond semiconductor package comprising the second semiconductor die.
15. The semiconductor device of claim 14 , wherein the wirebond semiconductor package includes a lid.
16. A semiconductor device, comprising:
a first semiconductor die;
a first encapsulant deposited around the first semiconductor die;
a second semiconductor die including a microelectromechanical device disposed over the first semiconductor die; and
a build-up interconnect structure formed between the first semiconductor die and second semiconductor die, wherein the build-up interconnect structure includes an opening over the second semiconductor die.
17. The semiconductor device of claim 16 , wherein the second semiconductor die is a bare die.
18. The semiconductor device of claim 16 , wherein the second semiconductor die is coupled to the first semiconductor die through a bond wire.
19. The semiconductor device of claim 16 , further including a semiconductor package including the second semiconductor die.
20. The semiconductor device of claim 19 , wherein the semiconductor package includes a lid.
21. The semiconductor device of claim 19 , wherein the semiconductor package includes a second encapsulant deposited around the second semiconductor die.
22. The method of claim 1 , wherein the build-up interconnect structure electrically couples the second semiconductor die to the first semiconductor die and the modular interconnect structure.
23. The semiconductor device of claim 12 , wherein a conductive layer of the build-up interconnect structure directly contacts the first semiconductor die.