Radio-frequency isolation cavities and cavity formation
A method for fabricating a radio-frequency device involves providing a semiconductor wafer including a transistor device, applying a form of sacrificial material on the semiconductor wafer, applying an interface material over the form of sacrificial material, and removing at least a portion of the form of sacrificial material to form a cavity at least partially covered by the interface material.
1. A method for fabricating a radio-frequency device, the method comprising:
providing a semiconductor wafer including a transistor device covered by a passivation layer having one or more electrical connections to the transistor device disposed therein;
applying a form of sacrificial material on the passivation layer at least partially over the transistor device;
applying an interface material over the form of sacrificial material; and
removing at least a portion of the form of sacrificial material to form a cavity between the interface material and the passivation layer.
2. The method of claim 1 wherein the form of sacrificial material at least partially covers a passive device implemented on the passivation layer.
3. The method of claim 2 wherein the passive device is one of a resistor, a capacitor, and an inductor.
4. The method of claim 2 wherein the semiconductor wafer is a silicon-on-insulator wafer including a semiconductor substrate and an oxide layer disposed between the semiconductor substrate and the transistor device.
5. The method of claim 4 wherein the passive device is electrically coupled to the transistor device via the one or more electrical connections.
6. The method of claim 4 further comprising at least partially removing the semiconductor substrate from a backside thereof.
7. The method of claim 6 wherein said at least partially removing the semiconductor substrate exposes at least a portion of a backside of the oxide layer.
8. The method of claim 7 further comprising disposing an electrical contact structure on the backside of the oxide layer to provide electrical contact to the transistor device via a through-oxide via.
9. The method of claim 1 further comprising forming a lateral channel of sacrificial material leading from the form of sacrificial material to a die boundary associated with the radio-frequency device.
10. The method of claim 9 wherein said removing the at least a portion of the form of sacrificial material is performed at least partially through the lateral channel.
11. The method of claim 1 wherein said removing the at least a portion of the form of sacrificial material involves evaporating the at least a portion of the form of sacrificial material.
12. A radio-frequency device comprising:
a semiconductor wafer including a transistor device covered by a one or more dielectric layers;
a patterned form of sacrificial material applied over the one or more dielectric layers;
an interface layer covering at least a portion of the form of sacrificial material and the one or more dielectric layers; and
a handle wafer applied over the interface layer.
13. The radio-frequency device of claim 12 further comprising an electrical element covered at least in part by the form of sacrificial material.
14. The radio-frequency device of claim 12 wherein the semiconductor wafer includes a semiconductor substrate and an oxide layer disposed between the semiconductor substrate and the transistor device.
15. The radio-frequency device of claim 14 further comprising an electrical element disposed at least partially within the form of sacrificial material, the electrical element being in electrical communication with the transistor device via the one or more electrical connections.
16. A semiconductor device comprising:
a semiconductor wafer including a transistor device;
a plurality of patterned forms of sacrificial material applied on the semiconductor wafer and aligned in a plurality of geometric rows and a plurality of geometric columns; and
an interface layer covering the plurality of forms of sacrificial material.
17. The semiconductor device of claim 16 wherein a first portion of the semiconductor wafer is covered by a cluster of the plurality of forms of sacrificial material and a second portion of the semiconductor wafer is not covered by any of the plurality of forms of sacrificial material.
18. The semiconductor device of claim 17 wherein the first portion of the semiconductor wafer corresponds to a radio-frequency core of the semiconductor device and the second portion of the semiconductor wafer corresponds to an energy management core of the semiconductor wafer.
19. The semiconductor device of claim 16 wherein the plurality of forms of sacrificial material comprises a plurality of physically separated clusters of forms of sacrificial material.
20. The semiconductor device of claim 16 wherein the plurality of forms of sacrificial material are rectangular-shaped.
21. The semiconductor device of claim 16 wherein the plurality of forms of sacrificial material are hexagonally-shaped.