Semiconductor device
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage V th of 0.3 V to 0.7 V and a leakage current J r of 1×10 −9 A/cm 2 to 1×10 −4 A/cm 2 in a rated voltage V R .
1. A semiconductor device comprising:
a first conductivity type semiconductor layer made of a wide bandgap semiconductor, the first conductivity type semiconductor layer having an active region and a field region surrounding the active region;
a Schottky electrode formed to come into contact with at least a portion of a surface of the first conductivity type semiconductor layer in the active region;
a plurality of annular guard rings of a second conductivity type formed in the field region, wherein:
the plurality of annular guard rings includes a first guard ring, a second guard ring and a third guard ring, and
a first distance between the first guard ring and the second guard ring is different from a second distance between the second guard ring and the third guard ring.
2. The semiconductor device according to claim 1 , further comprising:
a taper trench formed in the active region, the taper trench having a bottom surface and a side surface inclined at an angle (θ 1 ) exceeding 90° with respect to the bottom surface; and
an impurity region of the second conductivity type formed in the bottom surface and the side surface of the taper trench.
3. The semiconductor device according to claim 2 , wherein
the impurity region has a first thickness (t 5 ) from the bottom surface of the taper trench measured in a depth direction of the taper trench and a second thickness (t 6 ) from the side surface of the taper trench measured in a direction perpendicular to the side surface, and
the first thickness is greater than the second thickness.
4. The semiconductor device according to claim 3 , wherein the second thickness of the impurity region is constant along the side surface of the taper trench.
5. The semiconductor device according to claim 3 , wherein the first thickness of the impurity region is 0.3 μm to 0.7 μm, and the second thickness of the impurity region is 0.1 μm to 0.5 μm.
6. The semiconductor device according to claim 2 , wherein the impurity region has a boundary face with the first conductivity type semiconductor layer parallel to the side surface of the taper trench.
7. The semiconductor device according to claim 2 , wherein the impurity region has a constant depth from the side surface of the taper trench in a direction perpendicular to the bottom surface of the taper trench.
8. The semiconductor device according to claim 2 , wherein the angle (θ 1 ) between the side surface of the taper trench and the bottom surface of the taper trench is 95° to 150°.
9. The semiconductor device according to claim 1 , further comprising a first insulating film covering the field region, wherein the Schottky electrode has an end portion covering a part of the first insulating film.
10. The semiconductor device according to claim 9 , further comprising a second insulating film formed on the first insulating film, wherein the second insulating film has a first portion covering the end portion of the Schottky electrode and a second portion being in contact with the first insulating film.
11. The semiconductor device according to claim 10 , wherein the first portion of the second insulating film faces the first insulating film via the end portion of the Schottky electrode.
12. The semiconductor device according to claim 10 , wherein a most inner end of the second insulating film is positioned in the more external side than a most inner end of the first insulating film.
13. The semiconductor device according to claim 10 , wherein the second insulating film is thinner than the first insulating film.
14. The semiconductor device according to claim 10 , wherein the first insulating film is made of SiO 2 and the second insulating film is made of SiN.