IP Library › Granted Patent US 10,666,466
Granted Patent B2
US 10,666,466 · App. 16/285,914 · Granted May 26, 2020

Semiconductor integrated circuit, receiving device, and communication system

Inventors: Yuji Satoh (Kawasaki Kanagawa, JP); Yutaka Shimizu (Yokohama Kanagawa, JP)
Assignee: TOSHIBA MEMORY CORPORATION
H04L25/0272H03K5/2481H04B3/06H04L25/4917G01R31/31924
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Quick Facts
Patent No.
US 10,666,466
App. No.
16/285,914
Granted
May 26, 2020
Kind
B2
Abstract

A semiconductor integrated circuit includes a pair of differential signal lines including first and second signal lines, a first comparator, and a second comparator. The first comparator is configured to output at least one of a first signal corresponding to a difference between a potential of a first input node and a potential of a second input node, and a second signal corresponding to a difference between a potential of a third input node and a potential of a fourth input node. The second comparator is configured to output at least one of a third signal corresponding to a difference between a potential of a fifth input node and a potential of a seventh input node, and a fourth signal corresponding to a difference between a potential of a sixth input node and a potential of a eighth input node.

Claims (102)

1. A semiconductor integrated circuit comprising:

a pair of differential signal lines including a first signal line and a second signal line;

a first comparator including:

a first input node electrically connected to the first signal line;

a second input node electrically connectable to a first reference terminal at a first reference voltage;

a third input node electrically connected to the second signal line; and

a fourth input node electrically connectable to a second reference terminal at a second reference voltage different from the first reference voltage, wherein

the first comparator is configured to output at least one of a first signal corresponding to a difference between a potential of the first input node and a potential of the second input node, and a second signal corresponding to a difference between a potential of the third input node and a potential of the fourth input node; and

a second comparator including:

a fifth input node electrically connected to the first signal line;

a sixth input node electrically connected to the second signal line;

a seventh input node electrically connectable to a third reference terminal at a third reference voltage different from the first reference voltage and the second reference voltage; and

an eighth input node electrically connectable to a fourth reference terminal at a fourth reference voltage different from the first reference voltage and the second reference voltage, wherein

the second comparator is configured to output at least one of a third signal corresponding to a difference between a potential of the fifth input node and a potential of the seventh input node, and a fourth signal corresponding to a difference between a potential of the sixth input node and a potential of the eighth input node,

wherein the third reference voltage is between the first reference voltage and the second reference voltage, the fourth reference voltage is between the first reference voltage and the second reference voltage, and the third reference voltage is equal to the fourth reference voltage.

2. The semiconductor integrated circuit according to claim 1 , wherein the first comparator and the second comparator include a same circuit configuration.

3. The semiconductor integrated circuit according to claim 1 , wherein the first comparator includes:

a first NMOS transistor having a gate electrically connected to the first input node and a drain electrically connected to a first node;

a second NMOS transistor having a gate electrically connected to the second input node and a drain electrically connected to a second node;

a third NMOS transistor having a gate electrically connected to the third input node and a drain electrically connected to the first node; and

a fourth NMOS transistor having a gate electrically connected to the fourth input node and a drain electrically connected to the second node.

4. The semiconductor integrated circuit according to claim 3 , wherein the second comparator includes:

a fifth NMOS transistor having a gate electrically connected to the fifth input node and a drain electrically connected to a third node;

a sixth NMOS transistor having a gate electrically connected to the sixth input node and a drain electrically connected to a fourth node;

a seventh NMOS transistor having a gate electrically connected to the seventh input node and a drain electrically connected to the third node; and

an eighth NMOS transistor having a gate electrically connected to the eighth input node and a drain electrically connected to the fourth node.

5. The semiconductor integrated circuit according to claim 1 , further comprising:

a first resistor including one end electrically connected to the first signal line and another end electrically connected to a common node;

a second resistor including one end electrically connected to the second signal line and another end electrically connected to the common node; and

a first reference voltage generating circuit including a first common input terminal electrically connected to the common node, the first reference terminal, and the second reference terminal.

6. The semiconductor integrated circuit according to claim 1 , wherein the first comparator is configured to output both of the first signal and the second signal.

7. The semiconductor integrated circuit according to claim 6 , wherein the second comparator is configured to output both of the third signal and the fourth signal.

8. The semiconductor integrated circuit according to claim 1 , wherein a signal that is transferred on the pair of differential signal lines is a four-level pulse amplitude modulation (PAM4) signal.

9. A receiving device comprising:

a pair of differential receiving nodes connectable to a wired differential transmission path;

a pair of differential signal lines connected to the pair of differential receiving nodes, the pair of differential signal lines including a first signal line and a second signal line;

a first comparator including:

a first input node electrically connected to the first signal line;

a second input node electrically connectable to a first reference terminal at a first reference voltage;

a third input node electrically connected to the second signal line; and

a fourth input node electrically connectable to a second reference terminal at a second reference voltage different from the first reference voltage, wherein

the first comparator is configured to output at least one of a first signal corresponding to a difference between a potential of the first input node and a potential of the second input node, and a second signal corresponding to a difference between a potential of the third input node and a potential of the fourth input node;

a second comparator including:

a fifth input node electrically connected to the first signal line;

a sixth input node electrically connected to the second signal line;

a seventh input node electrically connectable to a third reference terminal at a third reference voltage different from the first reference voltage and the second reference voltage; and

an eighth input node electrically connectable to a fourth reference terminal at a fourth reference voltage different from the first reference voltage and the second reference voltage, wherein

the second comparator is configured to output at least one of a third signal corresponding to a difference between a potential of the fifth input node and a potential of the seventh input node, and a fourth signal corresponding to a difference between a potential of the sixth input node and a potential of the eighth input node; and

an internal circuit configured to restore a value indicated by a differential signal received by the pair of differential receiving nodes based on the at least one of the first and second signals and the at least one of the third and fourth signal,

wherein the third reference voltage is between the first reference voltage and the second reference voltage, the fourth reference voltage is between the first reference voltage and the second reference voltage, and the third reference voltage is equal to the fourth reference voltage.

10. The receiving device according to claim 9 , wherein the first comparator and the second comparator include a same circuit configuration.

11. The receiving device according to claim 9 , wherein the first comparator includes:

a first NMOS transistor having a gate electrically connected to the first input node and a drain electrically connected to a first node;

a second NMOS transistor having a gate electrically connected to the second input node and a drain electrically connected to a second node;

a third NMOS transistor having a gate electrically connected to the third input node and a drain electrically connected to the first node; and

a fourth NMOS transistor having a gate electrically connected to the fourth input node and a drain electrically connected to the second node.

12. The receiving device according to claim 11 , wherein the second comparator includes:

a fifth NMOS transistor having a gate electrically connected to the fifth input node and a drain electrically connected to a third node;

a sixth NMOS transistor having a gate electrically connected to the sixth input node and a drain electrically connected to a fourth node;

a seventh NMOS transistor having a gate electrically connected to the seventh input node and a drain electrically connected to the third node; and

an eighth NMOS transistor having a gate electrically connected to the eighth input node and a drain electrically connected to the fourth node.

13. The receiving device according to claim 9 , further comprising:

a first resistor including one end electrically connected to the first signal line and another end electrically connected to a common node;

a second resistor including one end electrically connected to the second signal line and another end electrically connected to the common node; and

a first reference voltage generating circuit including a first common input terminal electrically connected to the common node, the first reference terminal, and the second reference terminal.

14. The receiving device according to claim 9 , wherein a signal that is transferred on the pair of differential signal lines is a four-level pulse amplitude modulation (PAM4) signal.

15. A communication system comprising:

a transmitting device;

a wired differential transmission path connected to the transmitting device; and

a receiving device comprising:

a pair of differential receiving nodes connectable to a wired differential transmission path;

a pair of differential signal lines connected to the pair of differential receiving nodes, the pair of differential signal lines including a first signal line and a second signal line;

a first comparator including:

a first input node electrically connected to the first signal line;

a second input node electrically connectable to a first reference terminal at a first reference voltage;

a third input node electrically connected to the second signal line; and

a fourth input node electrically connectable to a second reference terminal at a second reference voltage different from the first reference voltage, wherein

the first comparator is configured to output at least one of a first signal corresponding to a difference between a potential of the first input node and a potential of the second input node, and a second signal corresponding to a difference between a potential of the third input node and a potential of the fourth input node; and

a second comparator including:

a fifth input node electrically connected to the first signal line;

a sixth input node electrically connected to the second signal line;

a seventh input node electrically connectable to a third reference terminal at a third reference voltage different from the first reference voltage and the second reference voltage; and

an eighth input node electrically connectable to a fourth reference terminal at a fourth reference voltage different from the first reference voltage and the second reference voltage, wherein

the second comparator is configured to output at least one of a third signal corresponding to a difference between a potential of the fifth input node and a potential of the seventh input node, and a fourth signal corresponding to a difference between a potential of the sixth input node and a potential of the eighth input node; and

an internal circuit configured to restore a value indicated by a differential signal received by the pair of differential receiving nodes based on the at least one of the first and second signals and the at least one of the third and fourth signals,

wherein the third reference voltage is between the first reference voltage and the second reference voltage, the fourth reference voltage is between the first reference voltage and the second reference voltage, and the third reference voltage is equal to the fourth reference voltage.

16. The communication system according to claim 15 , wherein the first comparator and the second comparator include a same circuit configuration.

17. The communication system according to claim 15 , wherein the first comparator includes:

a first NMOS transistor having a gate electrically connected to the first input node and a drain electrically connected to a first node;

a second NMOS transistor having a gate electrically connected to the second input node and a drain electrically connected to a second node;

a third NMOS transistor having a gate electrically connected to the third input node and a drain electrically connected to the first node; and

a fourth NMOS transistor having a gate electrically connected to the fourth input node and a drain electrically connected to the second node.

18. The communication system according to claim 17 , wherein the second comparator includes:

a fifth NMOS transistor having a gate electrically connected to the fifth input node and a drain electrically connected to a third node;

a sixth NMOS transistor having a gate electrically connected to the sixth input node and a drain electrically connected to a fourth node;

a seventh NMOS transistor having a gate electrically connected to the seventh input node and a drain electrically connected to the third node; and

an eighth NMOS transistor having a gate electrically connected to the eighth input node and a drain electrically connected to the fourth node.

19. The communication system according to claim 15 , wherein the receiving device further comprises:

a first resistor including one end electrically connected to the first signal line and another end electrically connected to a common node;

a second resistor including one end electrically connected to the second signal line and another end electrically connected to the common node; and

a first reference voltage generating circuit including a first common input terminal electrically connected to the common node, the first reference terminal, and the second reference terminal.

20. The communication system according to claim 15 , wherein a signal that is transferred on the pair of differential signal lines is a four-level pulse amplitude modulation (PAM4) signal.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2019
From: SATOH, YUJI; SHIMIZU, YUTAKA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 049060/0688 →
Priority Claims (1)
JP 2018-174654 · Sep 19, 2018 · national
Continuity (1)
Related Publication 20200092143A1 · Mar 19, 2020
Cited By (1)
US 12,537,729