Pumping liner for chemical vapor deposition
One or more pumping liners are provided for use in chemical vapor deposition (CVD). A pumping liner encircles a deposition chamber within which a wafer is placed and into which a precursor is introduced to form a thin film on a surface of the wafer. The pumping liner regulates a rate and uniformity at which a gas is removed from the deposition chamber, which in turn affects a duration or degree to which different portions of the wafer are exposed to the precursor. Controlling exposure of the wafer to the precursor promotes uniformity of the film formed on the wafer as well an ability to regulate the thickness of the film formed on the wafer. In an embodiment, a pumping liner has at least one of relatively small liner apertures, an increased number of liner apertures or a non-uniform distribution of liner apertures within a body of the pumping liner.
1. A pumping liner usable in a chemical vapor deposition (CVD) assembly, comprising:
an annular body; and
an array of liner apertures defined within and penetrating radially through the annular body, wherein:
a first liner aperture of the array of liner apertures occupies a first area of an outermost surface of the annular body,
a second liner aperture of the array of liner apertures occupies a second area of the outermost surface of the annular body,
the first liner aperture and the second liner aperture have a same shape,
the second area is equal to the first area,
the first liner aperture and the second liner aperture are on diametrically opposite sides of the annular body,
a center of the first liner aperture is spaced a first distance from a top surface of the annular body,
a center of the second liner aperture is spaced a second distance, different than the first distance, from the top surface of the annular body, and
distances between the top surface of the annular body and a center of each aperture gradually increase for every liner aperture of the array of liner apertures between the first liner aperture and the second liner aperture such that, for each pair of adjacent liner apertures between the first liner aperture and the second liner aperture:
a distance between the top surface of the annular body and a center of an aperture of the pair closest to the first liner aperture is less than a distance between the top surface of the annular body and a center of an aperture of the pair furthest from the first liner aperture.
2. The pumping liner of claim 1 , wherein the array of liner apertures comprises at least 60 liner apertures.
3. The pumping liner of claim 1 , wherein a ratio of a height of the annular body, measured in an axial direction of the annular body, to a wafer diameter of a wafer treated by the CVD assembly is between about 0.09 to about 0.2.
4. The pumping liner of claim 1 , wherein the annular body has a thickness, measured in a radial direction of the annular body, of between about 30 millimeters to about 50 millimeters.
5. The pumping liner of claim 1 , wherein liner apertures of the array of liner aperture have a non-uniform distribution around the annular body.
6. The pumping liner of claim 1 , wherein a total surface area of the outermost surface that is occupied by liner apertures, including the first liner aperture and the second liner aperture, of the array of liner apertures is less than about 1,200 square millimeters.
7. The pumping liner of claim 1 , wherein the top surface of the annular body is planar.
8. A pumping liner usable in a chemical vapor deposition (CVD) assembly, comprising:
an annular body; and
an array of liner apertures defined within and penetrating radially through the annular body, wherein:
a first liner aperture of the array of liner apertures and a second liner aperture of the array of liner apertures are disposed on diametrically opposite sides of the annular body,
the first liner aperture occupies a first area of an outermost surface of the annular body,
the second liner aperture occupies a second area of the outermost surface of the annular body,
the second area is equal to the first area,
a center of the first liner aperture is spaced a first distance from a top surface of the annular body,
a center of the second liner aperture is spaced a second distance, different than the first distance, from the top surface of the annular body, and
distances between the top surface of the annular body and a center of each aperture gradually increase for every liner aperture of the array of liner apertures between the first liner aperture and the second liner aperture such that, for each pair of adjacent liner apertures between the first liner aperture and the second liner aperture:
a distance between the top surface of the annular body and a center of an aperture of the pair closest to the first liner aperture is less than a distance between the top surface of the annular body and a center of an aperture of the pair furthest from the first liner aperture.
9. The pumping liner of claim 8 , wherein the top surface of the annular body is planar.
10. The pumping liner of claim 8 , wherein liner apertures of the array of liner aperture have a non-uniform distribution around the annular body.
11. The pumping liner of claim 8 , wherein the first liner aperture is conically shaped.
12. A chemical vapor deposition (CVD) assembly, comprising:
a wafer stage configured to place a wafer into a deposition chamber defined within the CVD assembly;
a pumping liner encircling the deposition chamber;
a pumping ring encircling the pumping liner such that a pumping passage is defined between the pumping ring and the pumping liner; and
a pumping port coupled to the pumping ring, wherein the pumping liner comprises:
an annular body; and
an array of liner apertures defined within and penetrating radially through the annular body, wherein:
a center of a first liner aperture of the array of liner apertures is spaced a first distance from a top surface of the annular body,
a center of a second liner aperture of the array of liner apertures disposed on a diametrically opposite side of the annular body relative to the first liner aperture is spaced a second distance, different than the first distance, from the top surface of the annular body,
the first liner aperture occupies a first area of an outermost surface of the annular body,
the second liner aperture occupies a second area of the outermost surface of the annular body,
the second area is equal to the first area, and
distances between the top surface of the annular body and a center of each aperture gradually increase for every liner aperture of the array of liner apertures between the first liner aperture and the second liner aperture such that, for each pair of adjacent liner apertures between the first liner aperture and the second liner aperture:
a distance between the top surface of the annular body and a center of an aperture of the pair closest to the first liner aperture is less than a distance between the top surface of the annular body and a center of an aperture of the pair furthest from the first liner aperture.
13. The CVD assembly of claim 12 , wherein at least one of:
at least some liner apertures, of the array of liner apertures, have an aperture radius of less than about 4.5 millimeters, or
a total surface area of an outermost surface of the annular body that is occupied by the liner apertures, including the first liner aperture and the second liner aperture, of the array of liner apertures is less than about 1,200 square millimeters.
14. The CVD assembly of claim 12 , wherein a ratio of a height of the annular body, measured in an axial direction of the annular body, to a wafer diameter of the wafer is between about 0.09 to about 0.2.
15. The CVD assembly of claim 12 , wherein the annular body has a thickness, measured in a radial direction of the annular body, of between about 30 millimeters to about 50 millimeters.
16. The CVD assembly of claim 12 , wherein liner apertures of the array of liner apertures have a non-uniform distribution around the annular body.
17. The CVD assembly of claim 12 , wherein the array of liner apertures comprises at least 60 liner apertures.
18. The CVD assembly of claim 12 , comprising a shower head configured to introduce a precursor into the deposition chamber.
19. The pumping liner of claim 12 , wherein the top surface of the annular body is planar.
20. The CVD assembly of claim 18 , comprising a block plate configured to disperse the precursor prior to the precursor entering the shower head.