Package structure and method of forming package structure
A method of forming a package structure includes disposing a semiconductor device over a first dielectric layer, wherein a first redistribution line is in the first dielectric layer, forming a molding compound over the first dielectric layer and in contact with a sidewall of the semiconductor device, forming a second dielectric layer over the molding compound and the semiconductor device, forming a first opening in the second dielectric layer, the molding compound, and the first dielectric layer to expose the first redistribution line, and forming a first conductor in the first opening, wherein the first conductor is electrically connected to the first redistribution line.
1. A method of forming a package structure, the method comprising:
disposing a semiconductor device over a first dielectric layer, wherein a first redistribution line is in the first dielectric layer;
forming a molding compound over the first dielectric layer and in contact with a sidewall of the semiconductor device;
forming a second dielectric layer over the molding compound and the semiconductor device;
forming a first opening in the second dielectric layer, the molding compound, and the first dielectric layer to expose the first redistribution line;
forming a first conductor in the first opening, wherein the first conductor is electrically connected to the first redistribution line;
forming a second opening in the first dielectric layer to expose the first redistribution line; and
forming a solder bump electrically connected to the first redistribution line that is in the second opening.
2. The method of claim 1 , wherein the first opening is formed by laser drilling.
3. The method of claim 1 , wherein the forming the first conductor comprises:
filling the first opening with a conductive paste; and
curing the conductive paste to form the first conductor.
4. The method of claim 1 , further comprising:
forming a second redistribution line over the second dielectric layer to electrically connect the semiconductor device and the first conductor.
5. The method of claim 1 , further comprising:
forming a third opening in the second dielectric layer to expose a conductive pad of the semiconductor device.
6. The method of claim 5 , wherein the third opening is formed by laser drilling.
7. The method of claim 5 , wherein the forming the molding compound further forms a molding compound residue over the conductive pad of the semiconductor device; and
wherein the forming the third opening removes the molding compound residue.
8. The method of claim 5 , further comprising:
forming a second conductor in the third opening.
9. The method of claim 8 , wherein the forming the second conductor comprises:
filling the third opening with a conductive paste; and
curing the conductive paste to form the second conductor.
10. The method of claim 1 , wherein the forming the molding compound comprising:
molding the semiconductor device in the molding compound with a top surface of the semiconductor device exposed.
11. A method of forming a package structure, the method comprising:
disposing a semiconductor device over a first dielectric layer, wherein a first redistribution line is in the first dielectric layer;
forming a molding compound over the first dielectric layer and in contact with a sidewall of the semiconductor device, wherein a portion of the molding compound covers a conductive pad of the semiconductor device;
forming a second dielectric layer over the molding compound and the semiconductor device;
forming a first opening in the second dielectric layer and removing the portion of the molding compound to expose the conductive pad of the semiconductor device;
forming a first conductor in the first opening;
forming a second opening in the first dielectric layer to expose the first redistribution line; and
forming a solder bump electrically connected to the first redistribution line that is in the second opening.
12. The method of claim 11 , wherein the first opening is formed by laser drilling.
13. The method of claim 11 , further comprising:
forming a second redistribution line over the second dielectric layer to be electrically connected to the first conductor.
14. The method of claim 11 , further comprising:
drilling at least the first dielectric layer and the molding compound to form a third opening; and
forming a second conductor in the third opening.
15. The method of claim 11 , wherein the forming the molding compound comprising:
molding the semiconductor device in the molding compound with a top surface of the semiconductor device free from coverage of the molding compound.
16. The method of claim 11 , wherein the forming the first conductor comprises:
applying a conductive paste in the first opening; and
curing the conductive paste to form the first conductor.
17. A method of forming a package structure, the method comprising:
disposing a semiconductor device over a first dielectric layer;
forming a molding compound over the first dielectric layer and surrounding the semiconductor device;
forming a second dielectric layer over the molding compound and the semiconductor device;
forming a first opening in the second dielectric layer, the molding compound, and the first dielectric layer;
forming a conductor in the first opening such that a top surface of the conductor is higher than an interface between the second dielectric layer and the molding compound;
forming a second opening in the first dielectric layer to expose a first redistribution line in the first dielectric layer; and
forming a solder bump electrically connected to the first redistribution line that is in the second opening.
18. The method of claim 17 , wherein the conductor is formed in the first opening such that the top surface of the conductor is lower than a top surface of the second dielectric layer.
19. The method of claim 17 , further comprising:
forming a redistribution line electrically connected to the conductor, wherein an entirety of the redistribution line is above a bottom surface of the second dielectric layer.
20. The method of claim 17 , further comprising:
forming a third opening in the second dielectric layer to expose a conductive pad of the semiconductor device.