Pattern-formation methods
Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210° C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.
1. A pattern-formation method, comprising:
(a) providing a substrate;
(b) forming a photoresist pattern over the substrate;
(c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210° C. or more; and
(d) after the applying a pattern treatment composition, heating the photoresist pattern.
2. The pattern-formation method of claim 1 , further comprising, after the heating the photoresist pattern, contacting the photoresist pattern with a rinsing agent.
3. The pattern-formation method of claim 2 , wherein the rinsing agent is water-based.
4. The pattern-formation method of claim 1 , wherein forming the photoresist pattern comprises, prior to the applying a pattern treatment composition:
(b1) lithographically patterning a photoresist composition layer; and
(b2) chemically trimming the lithographically patterned photoresist composition layer.
5. The pattern-formation method of claim 1 , further comprising, after the heating the photoresist pattern, patterning a layer below the photoresist pattern using the photoresist pattern as a mask.
6. The pattern-formation method of claim 1 , wherein the first organic solvent is present in the pattern treatment composition in an amount of from 0.001 to 20wt % based on the solvent mixture.
7. The pattern-formation method of claim 1 , wherein the first organic solvent is a glycol ether.
8. The pattern-formation method of claim 7 , wherein the first organic solvent is chosen from dipropylene glycol, di(propylene glycol) allyl ether, di(ethylene glycol) monobutyl ether, tripropylene glycol, tri(propylene glycol) monomethyl ether, tri(propylene glycol) monobutyl ether, pentapropylene glycol monomethyl ether, pentapropylene glycol monobutyl ether and combinations thereof.
9. The pattern-formation method of claim 1 , wherein the second organic solvent has a boiling point of from 120 to 200° C.
10. The pattern-formation method of claim 1 , wherein the second organic solvent is a dialkyl ether having a total carbon number of from 6 to 16.
11. The pattern-formation method of claim 10 , wherein the second organic solvent is an alkyl ether or an aryl ether.
12. The pattern-formation method of claim 1 , wherein the pattern treatment composition further comprises a surfactant.
13. The pattern-formation method of claim 1 , wherein the pattern treatment composition further comprises an acid or an acid generator.
14. The pattern-formation method of claim 1 , wherein the pattern treatment composition is free of acids and acid generators.
15. The pattern-formation method of claim 1 , wherein the pattern treatment composition is free of non-surfactant polymers.