Semiconductor chip package with resilient conductive paste post and fabrication method thereof
A semiconductor chip package includes a substrate; a semiconductor die mounted on the substrate, wherein the semiconductor die comprises a bond pad disposed on an active surface of the semiconductor die, and a passivation layer covering perimeter of the bond pad, wherein a bond pad opening in the passivation layer exposes a central area of the bond pad; a conductive paste post printed on the exposed central area of the bond pad; and a bonding wire secured to a top surface of the conductive paste post. The conductive paste post comprises copper paste.
1. A semiconductor chip package, comprising:
a substrate;
a semiconductor die mounted on the substrate, wherein the semiconductor die comprises a bond pad disposed on an active surface of the semiconductor die, and a passivation layer covering perimeter of the bond pad, wherein a bond pad opening in the passivation layer exposes a central area of the bond pad;
a resilient conductive paste printed on an exposed central area of the bond pad; and
a bonding wire secured to a top surface of the resilient conductive paste, wherein the resilient conductive paste comprises copper paste.
2. The semiconductor chip package according to claim 1 , wherein the copper paste comprises epoxy resin and copper powder or silver-coated copper balls as filler.
3. The semiconductor chip package according to claim 1 , wherein the copper paste completely fills up the bond pad opening, wherein a peripheral sidewall of the copper paste is in direct contact with the passivation layer.
4. A semiconductor chip package, comprising:
a substrate;
a semiconductor die mounted on the substrate, wherein the semiconductor die comprises a bond pad disposed on an active surface of the semiconductor die, and a passivation layer covering perimeter of the bond pad, wherein a bond pad opening in the passivation layer exposes a central area of the bond pad;
a resilient conductive paste printed on an exposed central area of the bond pad; and
a bonding wire secured to a top surface of the resilient conductive paste,
wherein the resilient conductive paste does not completely fill up the bond pad opening, wherein a peripheral sidewall of the resilient conductive paste is not in direct contact with the passivation layer.
5. The semiconductor chip package according to claim 1 further comprising a conductive layer coated on the top surface of the resilient conductive paste.
6. The semiconductor chip package according to claim 1 further comprising an encapsulant material molded over the substrate.
7. The semiconductor chip package according to claim 1 , wherein the passivation layer comprises a polyimide layer.
8. The semiconductor chip package according to claim 1 , wherein the bond pad is an aluminum bond pad.
9. A semiconductor chip package, comprising:
a substrate;
a semiconductor die mounted on the substrate, wherein the semiconductor die comprises a bond pad disposed on an active surface of the semiconductor die, and a passivation layer covering perimeter of the bond pad, wherein a bond pad opening in the passivation layer exposes a central area of the bond pad;
a resilient conductive paste printed on an exposed central area of the bond pad;
a conductive trace printed on the passivation layer and being electrically connected to the resilient conductive paste;
a redistributed bond pad printed on the passivation layer, wherein the redistributed bond pad is electrically connected to the resilient conductive paste through the conductive trace; and
a bonding wire secured to a top surface of the redistributed bond pad.
10. The semiconductor chip package according to claim 9 , wherein the resilient conductive paste is structurally integral with the conductive trace and the redistributed bond pad.
11. The semiconductor chip package according to claim 9 further comprising an insulating layer on the passivation layer, and wherein the insulating layer covers the resilient conductive paste, the conductive trace, and the redistributed bond pad, and wherein the insulating layer comprises an opening exposing the redistributed bond pad.
12. The semiconductor chip package according to claim 11 , wherein the insulating layer comprises a molding compound.
13. The semiconductor chip package according to claim 9 further comprising a passive element printed on the passivation layer.
14. The semiconductor chip package according to claim 9 , wherein the resilient conductive paste comprises copper paste.