Radar module with wafer level package and underfill
A semiconductor radar module includes an integrated circuit (IC) radar device embedded within a wafer level package compound layer, the wafer level package compound layer extending at least partially lateral to the IC radar device. An interface layer abutting the wafer level package compound layer comprises a redistribution layer coupled to the IC radar device for connecting the IC radar device externally. An underfill material extends between the interface layer and an external substrate and abuts the interface layer and the external substrate. The interface layer is disposed between the wafer level package compound layer and the underfill material.
1. A semiconductor radar module comprising:
an integrated circuit (IC) radar device embedded within a wafer level package compound layer, the wafer level package compound layer extending at least partially lateral to the IC radar device;
an interface layer abutting the IC radar device at a first portion, and abutting the wafer level package compound layer at a second portion,
wherein the interface layer comprises a redistribution layer coupled to the IC radar device for connecting the IC radar device externally,
wherein the redistribution layer comprises at least one of an antenna or an antenna feed extending in the first and second portion, and
an underfill material extending at least in the second portion between the interface layer and an external substrate, the underfill material abutting the interface layer and the external substrate,
wherein the interface layer is disposed between the wafer level package compound layer and the underfill material, and
wherein the underfill material only partially fills an air cavity formed between the interface layer and the external substrate.
2. The semiconductor radar module of claim 1 , further comprising:
a 3D interconnect structure configured to contact the external substrate.
3. The semiconductor radar module of claim 2 , wherein the 3D interconnect structure extends within the underfill material.
4. The semiconductor radar module of claim 2 , wherein the 3D interconnect structure is a solder ball.
5. The semiconductor radar module of claim 2 , wherein the underfill material comprises an organic material.
6. The semiconductor radar module of claim 2 , wherein the underfill material comprises epoxy material.
7. The semiconductor radar module of claim 1 , wherein the IC radar device is a mm-wave radar MMIC device configured for mixing, power amplification, and low noise amplification.
8. The semiconductor radar module of claim 1 , wherein the underfill material has a dielectric constant that is greater than air such that a distance between (i) a surface of the external substrate abutting the underfill material, and (ii) at least one of the antenna or the antenna feed embedded within the interface layer, is increased to a predetermined electrical length.
9. The semiconductor of claim 8 , wherein the predetermined electrical length is a quarter wavelength of antenna radiation associated with the antenna.
10. The semiconductor of claim 8 , wherein the predetermined electrical length represents a distance between the antenna and a radiation reflector disposed on the external substrate abutting the underfill material.
11. The semiconductor of claim 10 , wherein the radiation reflector is configured to direct a radiation of energy associated with the antenna in a direction that is opposite to that of the external substrate.