FinFET device with a wrap-around silicide source/drain contact structure
One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.
1. A FinFET device with a gate width direction and a gate length direction, said device comprising:
a source/drain structure that, when viewed in a cross-section taken through said source/drain structure in a direction corresponding to said gate width direction, comprises a perimeter and a bottom surface, said source/drain structure also comprising an axial length that extends in a direction corresponding to said gate length direction; and
a metal silicide material positioned around an entirety of said perimeter of said source/drain structure for at least a portion of said axial length of said source/drain structure and on at least a portion of said bottom surface of said source/drain structure for at least a portion of said axial length of said source/drain structure.
2. The device of claim 1 , wherein said metal silicide material is positioned on an entirety of said bottom surface of said source/drain structure.
3. The device of claim 2 , wherein said metal silicide material comprises a bottom portion positioned under said bottom surface of said source/drain structure, wherein at least part of said bottom portion of said metal silicide material has, when viewed in a cross-section taken through said source/drain structure in a direction corresponding to said gate length direction, one of a U-shape, a semi-circular shape, a partial elliptical shape portion or a shield shape cross -sectional configuration.
4. The device of claim 1 , wherein said source/drain structure comprises a doped epitaxial semiconductor material.
5. The device of claim 4 , wherein said source/drain structure abuts a first side of an original substrate fin and wherein said device further comprises a gate structure positioned around at least a portion of said original substrate fin.
6. The device of claim 1 , further comprising a conductive source/drain structure that conductively contacts at least a portion of said metal silicide material.
7. A FinFET device with a gate width direction and a gate length direction, said device comprising:
an original substrate fin;
a gate structure positioned around at least a portion of said substrate original substrate fin;
a source/drain structure comprised of a doped epitaxial semiconductor material, said source/drain structure abutting a first side of said original substrate fin, said source/drain structure, when viewed in a cross-section taken through said source/drain structure in a direction corresponding to said gate width direction, comprises a perimeter and a bottom surface, said source/drain structure also comprising an axial length that extends in a direction corresponding to said gate length direction; and
a metal silicide material positioned around an entirety of said perimeter of said source/drain structure for at least a portion of said axial length of said source/drain structure and on at least a portion of said bottom surface of said source/drain structure for at least a portion of said axial length of said source/drain structure.
8. The device of claim 7 , wherein said metal silicide material is positioned on an entirety of said bottom surface of said source/drain structure.
9. The device of claim 7 , wherein said metal silicide material extends along substantially an entirety of said axial length of said source/drain structure.
10. The device of claim 8 , wherein said metal silicide material extends along substantially an entirety of said axial length of said source/drain structure.
11. The device of claim 8 , wherein said metal silicide material comprises a bottom portion positioned under said bottom surface of said source/drain structure, wherein at least part of said bottom portion of said metal silicide material has, when viewed in a cross-section taken through said source/drain structure in a direction corresponding to said gate length direction, one of a U-shape, a semi-circular shape, a partial elliptical shape portion or a shield shape cross -sectional configuration.
12. A FinFET device with a gate width direction and a gate length direction, said device comprising:
a source/drain structure that, when viewed in a cross-section taken through said source/drain structure in a direction corresponding to said gate width direction, comprises a perimeter and a bottom surface, said source/drain structure also comprising an axial length that extends in a direction corresponding to said gate length direction; and
a metal silicide material positioned on at least a portion of said perimeter of said source/drain structure for at least a portion of said axial length of said source/drain structure and on an entirety of said bottom surface of said source/drain structure for at least a portion of said axial length of said source/drain structure.
13. The device of claim 1 , wherein said metal silicide material extends along substantially an entirety of said axial length of said source/drain structure.
14. The device of claim 12 , wherein said metal silicide material extends along substantially an entirety of said axial length of said source/drain structure.
15. The device of claim 14 , wherein said metal silicide material extends around an entirety of said perimeter of said source/drain structure.
16. The device of claim 15 , wherein said source/drain structure comprises a doped epitaxial semiconductor material.