Semiconductor device and method for manufacturing same, for releaved stress and high heat conductivity
Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.
1. A semiconductor device comprising:
an insulating substrate comprising an insulating plate, a first conductive plate disposed on one surface of the insulating plate, and a second conductive plate disposed on another surface of the insulating plate;
a sintered metal;
a semiconductor element disposed on the first conductive plate through the sintered metal, the semiconductor element having a crack-proceeding depth rate of 30% or less of a chip thickness, and having a thickness of 0.05 mm or more and 0.1 mm or less;
a joining material; and
a cooler joined to the second conductive plate through the joining material.
2. The semiconductor device according to claim 1 , wherein the sintered metal has a thickness of 3 μm or more and 100 μm or less.
3. The semiconductor device according to claim 2 , wherein the semiconductor element comprises a semiconductor base made of SiC.
4. The semiconductor device according to claim 1 , wherein the insulating plate is made of silicon nitride, aluminum nitride, or alumina.
5. The semiconductor device according to claim 4 , wherein the semiconductor element comprises a semiconductor base made of SiC.
6. The semiconductor device according to claim 1 , wherein the second conductive plate comprises a stacked structure of copper or an alloy of copper, and aluminum or an alloy of aluminum.
7. The semiconductor device according to claim 6 , wherein the semiconductor element comprises a semiconductor base made of SiC.
8. The semiconductor device according to claim 1 , wherein the cooler is made of aluminum or an alloy of aluminum.
9. The semiconductor device according to claim 8 , wherein the semiconductor element comprises a semiconductor base made of SiC.
10. The semiconductor device according to claim 1 , wherein the semiconductor element comprises a semiconductor base made of SiC.
11. A method for manufacturing a semiconductor device, comprising:
(a) preparing an insulating substrate comprising an insulating plate, a first conductive plate disposed on one surface of the insulating plate, and a second conductive plate disposed on another surface of the insulating plate;
(b) disposing a semiconductor element to the first conductive plate through a sintered metal, the semiconductor element having a thickness of 0.05 mm or more and 0.1 mm or less, and having a crack-proceeding depth rate of 30% or less of the thickness; and
(c) joining a cooler to the second conductive plate through a first joining material.
12. The method for manufacturing a semiconductor device according to claim 11 , further comprising:
(d) joining, through a second joining material, a lead to the semiconductor element on a side that is opposite to a side on which the sintered metal is disposed, and
(e) sealing the semiconductor element, the insulating substrate, and the lead with a sealing resin.