Configuration for optoelectronic device
An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary, which has a shape including a plurality of interconnected fingers. The n-type semiconductor layer can have a shape at least partially defined by the mesa boundary. A first n-type contact layer can be located adjacent to another portion of the n-type semiconductor contact layer, where the first n-type contact layer forms an ohmic contact with the n-type semiconductor layer. A second contact layer can be located over a second portion of the n-type semiconductor contact layer, where the second contact layer is formed of a reflective material.
1. An optoelectronic device comprising:
an n-type semiconductor layer having a mesa surface and a growth surface located on an opposite side as the mesa surface;
a mesa including an active region located adjacent to at least a first portion of the mesa surface of the n-type semiconductor layer and having a mesa boundary, wherein the mesa boundary has a shape including a plurality of interconnected fingers, and wherein the n-type semiconductor layer has a shape at least partially defined by the mesa boundary;
a first n-type contact layer located adjacent to at least a portion of the n-type semiconductor layer entirely distinct from the location of the mesa, wherein the first n-type contact layer forms an ohmic contact with the n-type semiconductor layer; and
a second contact layer located adjacent to the n-type semiconductor layer and the first n-type contact layer, wherein the second contact layer is formed of a material different from a material of the first n-type contact layer, and wherein the second contact layer partially overlaps the first contact layer.
2. The optoelectronic device of claim 1 , wherein the first n-type contact layer is located adjacent to a second portion of the mesa surface of the n-type semiconductor layer entirely distinct from the first portion.
3. The optoelectronic device of claim 2 , wherein the first n-type contact layer is located in proximity of the mesa boundary, and wherein the first n-type contact layer has a shape at least partially defined by the shape of mesa.
4. The optoelectronic device of claim 1 , wherein at least one of: the first n-type contact layer or the second contact layer, is formed of a reflective material.
5. The optoelectronic device of claim 1 , wherein the first n-type contact layer is located adjacent to the growth surface of the n-type semiconductor layer.
6. The optoelectronic device of claim 5 , wherein the first n-type contact layer forms a mesh structure.
7. The optoelectronic device of claim 5 , wherein the growth surface of the n-type semiconductor layer has a rough morphology.
8. The optoelectronic device of claim 1 , wherein the first n-type contact layer includes a plurality of sub-layers, each of the plurality of sub-layers having a composition that differs from a composition of each adjacent sub-layer of the plurality of sub-layers.
9. The optoelectronic device of claim 1 , wherein the first n-type contact layer comprises a plurality of domains with each domain having a smallest characteristic length-scale being at least a current spreading length width of the n-type semiconductor contact layer.
10. The optoelectronic device of claim 1 , wherein the n-type semiconductor layer includes a plurality of voids, each of the plurality of voids having a depth of 0.1-50 microns and a lateral size of 0.1-20 microns.
11. The optoelectronic device of claim 10 , further comprising a plurality of target radiation scattering material domains at least partially filling the voids.
12. The optoelectronic device of claim 1 , wherein the n-type semiconductor layer comprises a set of angled side surfaces, wherein at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a normal vector to a top surface of the n-type semiconductor contact layer.
13. The optoelectronic device of claim 1 , wherein the mesa comprises a set of angled side surfaces, wherein at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a normal vector of a top surface of the mesa.
14. The optoelectronic device of claim 1 , wherein the first n-type contact layer extends between the plurality of interconnected fingers.
15. An optoelectronic device comprising:
an n-type group III nitride semiconductor layer having a mesa surface and a growth surface located on an opposite side as the mesa surface, wherein the n-type semiconductor layer includes a plurality of voids, each of the plurality of voids having a depth of 0.1-50 microns and a lateral size of 0.1-20 microns;
a mesa including an active region located adjacent to at least a first portion of the mesa surface of the n-type group III nitride semiconductor layer and having a mesa boundary, wherein the mesa boundary includes a plurality of interconnected fingers, and wherein the n-type semiconductor layer has a shape at least partially defined by the mesa boundary;
a first n-type contact layer located adjacent to at least a portion of the n-type semiconductor layer entirely distinct from the location of the mesa, wherein the first n-type contact layer forms an ohmic contact with the n-type group III nitride semiconductor layer; and
a second n-type contact layer located adjacent to the n-type semiconductor layer and the first n-type contact layer, wherein the second n-type contact layer directly contacts the first n-type contact layer and is formed of a reflective material different from a material of the first n-type contact layer.
16. The optoelectronic device of claim 15 , wherein the first n-type contact layer is located adjacent to a second portion of the mesa surface of the n-type semiconductor layer entirely distinct from the first portion.
17. The optoelectronic device of claim 15 , wherein the first n-type contact layer is located adjacent to the growth surface of the n-type semiconductor layer.
18. A method of fabricating an optoelectronic device comprising:
forming a heterostructure including:
an n-type semiconductor layer having a mesa surface and a growth surface located on an opposite side as the mesa surface; and
a mesa including an active region located adjacent to at least a first portion of the mesa surface of the n-type semiconductor layer and having a mesa boundary, wherein the mesa boundary has a shape including a plurality of interconnected fingers, and wherein the n-type semiconductor layer has a shape at least partially defined by the mesa boundary;
depositing a first n-type contact layer adjacent to at least a first portion of the n-type semiconductor layer entirely distinct from the location of the mesa; and
depositing a second n-type contact layer adjacent to the n-type semiconductor layer and the first n-type contact layer, wherein the second n-type contact layer directly contacts the first n-type contact layer and is formed of a material different from a material of the first n-type contact layer.
19. The method of claim 18 , further comprising annealing the first n-type contact layer and the second n-type contact layer.
20. The method of claim 19 , wherein the annealing first n-type contact layer uses laser annealing.