Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
A method for making a semiconductor device may include forming a recess in a substrate including a first Group IV semiconductor, forming an active layer comprising a Group III-V semiconductor within the recess, and forming a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The method may further include forming an impurity and point defect blocking superlattice layer adjacent the buffer layer.
1. A method for making a semiconductor device comprising:
forming a recess in a substrate comprising a first Group IV semiconductor;
forming an active layer comprising a Group III-V semiconductor within the recess;
forming a buffer layer between the substrate and the active layer and comprising a second Group IV semiconductor; and
forming a first impurity and point defect blocking superlattice layer between and in contact with the substrate and the buffer layer; and
forming a second impurity and point defect blocking superlattice layer between and in contact with the buffer layer and the active layer.
2. The method of claim 1 wherein forming at least one of the first and second impurity and point defect blocking superlattice layers comprises forming a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and forming at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
3. The method of claim 2 wherein the base semiconductor layers comprise silicon monolayers.
4. The method of claim 2 wherein the base semiconductor layers comprise germanium.
5. The method of claim 2 wherein the at least one non-semiconductor monolayer comprises at least one of oxygen, nitrogen, fluorine, carbon and carbon-oxygen.
6. The method of claim 1 wherein the first Group IV semiconductor comprises silicon.
7. The method of claim 1 wherein the second Group IV semiconductor comprises germanium.
8. The method of claim 1 wherein the Group III-V semiconductor comprises InP.
9. The method of claim 1 further comprising:
forming a channel layer on the active layer;
forming a gate on the channel layer; and
forming a source and a drain on opposite sides of the gate.
10. The method of claim 9 wherein the Group III-V semiconductor of the active layer comprises a first Group III-V semiconductor; and wherein the channel layer comprises a second Group III-V semiconductor different than the first Group III-V semiconductor.
11. The method of claim 10 wherein the second Group III-V semiconductor comprises InGaAs.
12. The method of claim 10 wherein the source and drain also comprise the second Group III-V semiconductor.
13. A method for making a semiconductor device comprising:
forming a substrate comprising a first Group IV semiconductor having a recess therein;
forming an active layer comprising a Group III-V semiconductor within the recess;
forming a buffer layer between the substrate and the active layer and comprising a second Group IV semiconductor;
forming a first impurity and point defect blocking superlattice layer between and in contact with the substrate and the buffer layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base monolayers of the first Group IV semiconductor defining a first base semiconductor portion, and at least one first non-semiconductor monolayer constrained within a crystal lattice of adjacent first base semiconductor portions; and
forming a second impurity and point defect blocking superlattice layer between and in contact with the buffer layer and the active layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base monolayers of the second Group IV semiconductor defining a second base semiconductor portion, and at least one second non-semiconductor monolayer constrained within a crystal lattice of adjacent second base semiconductor portions.
14. The method of claim 13 wherein the first and second non-semiconductor monolayers comprise at least one of oxygen, nitrogen, fluorine, carbon and carbon-oxygen.
15. The method of claim 13 wherein the first Group IV semiconductor comprises silicon.
16. The method of claim 13 wherein the second Group IV semiconductor comprises germanium.
17. The method of claim 13 wherein the Group III-V semiconductor comprises InP.
18. The method of claim 13 further comprising:
forming a channel layer on the active layer;
forming a gate on the channel layer; and
forming a source and a drain on opposite sides of the gate.
19. The method of claim 18 wherein the Group III-V semiconductor of the active layer comprises a first Group III-V semiconductor; and wherein the channel layer comprises a second Group III-V semiconductor different than the first Group III-V semiconductor.
20. The method of claim 19 wherein the second Group III-V semiconductor comprises InGaAs.
21. The method of claim 19 wherein the source and drain also comprise the second Group III-V semiconductor.
22. A method for making a semiconductor device comprising:
forming a substrate comprising a first Group IV semiconductor having a recess therein;
forming an active layer comprising a Group III-V semiconductor within the recess;
forming a buffer layer between the substrate and the active layer and comprising a second Group IV semiconductor;
forming a first impurity and point defect blocking superlattice layer between and in contact with the substrate and the buffer layer; and
forming a second impurity and point defect blocking superlattice layer between and in contact with the buffer layer and the active layer;
the first and second impurity and point defect blocking superlattice layers each comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
23. The method of claim 22 wherein the base semiconductor layers comprise silicon monolayers, and the at least one non-semiconductor monolayer comprises oxygen.
24. The method of claim 22 wherein the first Group IV semiconductor comprises silicon, and the second Group IV semiconductor comprises germanium.
25. The method of claim 22 wherein the Group III-V semiconductor comprises InP.