IP Library › Granted Patent US 10,727,220
Granted Patent B2
US 10,727,220 · App. 16/529,348 · Granted Jul 28, 2020

Package on package with integrated passive electronics method and apparatus

Inventor: Hyoung Il Kim (Folsom, CA)
Assignee: Intel Corporation
H01L25/50H01L21/486H01L21/56H01L23/3128H01L23/49811H01L23/5384H01L25/18H01L2224/16225H01L2224/48091H01L2924/181H01L2924/1815
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Quick Facts
Patent No.
US 10,727,220
App. No.
16/529,348
Granted
Jul 28, 2020
Kind
B2
Abstract

The present application relates to devices and techniques for a package on package multi-package integrated circuit. A component of the integrated circuit maybe located in a void formed in a circuit package of the multi-package integrated circuit. The void may be formed by fabricating a void structure with an internal void corresponding to the component. The void structure may be bonded to a first substrate of a first package in the multi-package integrated circuit. The first substrate and void structure may be encased in a mold compound. A sacrificial layer may be removed, exposing the void in the void structure. The component may be, for example, a through mold via. The first package may be coupled to a second package. Multi-package integrated circuit assemblies fabricated pursuant to the disclosure herein may comprise a higher density of electronic components, including passive electronic components.

Claims (44)

1. A multi-package integrated circuit comprising:

a top circuit package, wherein the top circuit package includes:

a bottom circuit package substrate;

a first integrated circuit disposed on the bottom circuit package substrate;

a mold compound layer disposed on the bottom circuit package substrate to encapsulate the first integrated circuit;

first and second void structures disposed in the mold compound layer, wherein the first and second void structures have first and second heights, wherein the first height is greater than the second height; and

a conductor via disposed through the mold compound layer, wherein the conductor via is formed with vertical sidewalls in the mold compound, and filled with a conductive material; and

a top circuit package, wherein the top circuit package includes:

a top circuit package substrate;

a second integrated circuit disposed in a die side layer of the top circuit package substrate; and

first and second passive electrical components disposed on an interface side of the top circuit package substrate to match the disposition of the first and second void structures of the bottom circuit package substrate,

wherein the first and second passive electrical components have first and second component heights that respectively match the first and second heights of the first and second void structures, wherein the first component height is greater than the second component height,

wherein the top circuit package is mounted to a bottom circuit package,

wherein the first and second passive electrical components are inserted in the first and second void structures respectively,

wherein the bottom circuit package is electrically coupled to the interface side of the top circuit package substrate, and

wherein the conductor via with vertical sidewalls provides at least a part of the electrical coupling between the top and bottom circuit packages.

2. The multi-package integrated circuit of claim 1 , wherein the first and second void structures are made from a material of the bottom circuit package.

3. The multi-package integrated circuit of claim 1 , wherein a vertical wall of the first and second void structures is disposed perpendicular to a horizontal floor of the first and second void structures.

4. The multi-package integrated circuit of claim 1 , wherein the first or second passive electrical components comprise at least one of a resistor, capacitor, power component, or through mold via (TMV).

5. The multi-package integrated circuit of claim 4 , wherein the first and second passive electrical components are electrically coupled to the bottom circuit package.

6. The multi-package integrated circuit of claim 4 , wherein the bottom circuit package comprises a bottom circuit package substrate and wherein the TMV comprises vertical walls provided perpendicular to the top circuit package substrate and the bottom circuit package substrate.

7. The multi-package integrated circuit of claim 1 , wherein the top circuit package and the bottom circuit package are electrically coupled by a first ball grid array and wherein an interface side of the bottom circuit package substrate is mounted to a motherboard by a second ball grid array.

8. A computer device comprising:

a top circuit package, a bottom circuit package, and a motherboard, wherein the bottom circuit package comprises:

a bottom circuit package substrate;

a first integrated circuit disposed on the bottom circuit package substrate;

a mold compound layer disposed on the bottom circuit package substrate to encapsulate the first integrated circuit;

first and second void structures disposed in the mold compound layer, wherein the first and second void structures have first and second heights, wherein the first height is greater than the second height; and

a conductor via disposed through the mold compound layer, wherein the conductor via is formed with vertical sidewalls in the mold compound, and filled with a conductive material; and

wherein the top circuit package comprises:

a top circuit package substrate;

a second integrated circuit disposed in a die side layer of the top circuit package substrate; and

first and second passive electrical components disposed on an interface side of the top circuit package substrate to match the disposition of the first and second void structures of the bottom circuit package substrate,

wherein the first and second passive electrical components have first and second component heights that respectively match the first and second heights of the first and second void structures, wherein the first component height is greater than the second component height,

wherein the top circuit package and the bottom circuit package are electrically coupled by a first ball grid array,

wherein an interface side of a bottom circuit package substrate of the bottom circuit package is mounted to the motherboard by a second ball grid array,

wherein the first and second passive electrical components are inserted in the first and second void structures respectively,

wherein the bottom circuit package is electrically coupled to the interface side of the top circuit package substrate, and

wherein the conductor via with vertical sidewalls provides at least a part of the electrical coupling between the top and bottom circuit packages.

9. The computer device of claim 8 , wherein the first and second void structures are made from a material of the bottom circuit package.

10. The computer device of claim 8 , wherein the first or second passive electrical components comprise at least one of a resistor, capacitor, power component, or through mold via (TMV).

11. The computer device of claim 10 , wherein the first and second passive electrical components are electrically coupled to the bottom circuit package.

12. The computer device of claim 10 , wherein the TMV includes vertical walls provided perpendicular to the top circuit package substrate and the bottom circuit package substrate.

13. The computer device of claim 8 , wherein the second ball grid array forms a first plurality of electrical contacts between the interface side of the bottom circuit package substrate and the motherboard, wherein the first ball grid array forms a second plurality of electrical contacts between the interface side of the top circuit package substrate and the bottom circuit package, wherein the first plurality of contacts is greater than the second plurality of contacts.

Continuity (2)
Division 15721057 · Sep 29, 2017
Related Publication 20190355709A1 · Nov 21, 2019
Cited By (1)
US 12,283,578