Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.
1. A semiconductor device, comprising:
a hybrid pillar-type bottom electrode including a cylindrical first bottom electrode and a pillar-type second bottom electrode filling a cylindrical inside of the cylindrical first bottom electrode;
a supporter suitable for supporting an outer wall of the hybrid pillar-type bottom electrode;
a dielectric layer formed over the hybrid pillar-type bottom electrode and the supporter; and
a top electrode disposed over the dielectric layer,
wherein the pillar-type second bottom electrode includes:
a conductive pillar body filling the cylindrical inside of the first bottom electrode; and
a conductive pillar head extending from the conductive pillar body to cover an upper surface of the cylindrical first bottom electrode,
wherein the supporter is in direct contact with a sidewall of the pillar head and an upper sidewall of the cylindrical first bottom electrode.
2. The semiconductor device of claim 1 , wherein an upper surface of the supporter and an upper surface of the conductive pillar head are disposed at the same level.
3. The semiconductor device of claim 1 , wherein the conductive pillar head has a greater width than that of the pillar body.
4. The semiconductor device of claim 1 , wherein the conductive pillar head and the pillar body are made of the same material.
5. The semiconductor device of claim 1 , wherein the conductive pillar head and the pillar body are made of polysilicon.
6. The semiconductor device of claim 1 , wherein the cylindrical first bottom electrode comprises a different material than the pillar-type second bottom electrode.
7. The semiconductor device of claim 1 , wherein the cylindrical first bottom electrode includes a metal or a metal nitride, and the pillar-type second bottom electrode includes polysilicon.