Plasma processing apparatus

1. A plasma processing apparatus comprising:

a processing chamber which is formed using a vacuum container;

a sample stage which is installed inside the processing chamber and on which an object to be processed is placed;

a vacuum exhaust unit which includes a vacuum pump and exhausts an inside of the processing chamber to vacuum; and

a plasma generation unit which includes a power supply and generates plasma inside the processing chamber,

wherein the sample stage includes:

a first metallic base material which has a flow path of a refrigerant formed therein;

a second metallic base material which is disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material;

an insulating film layer which is formed using an insulating member covering a surface of the second metallic base material, has an electrode formed therein, and adsorbs the object to be processed, placed on an upper surface of the insulating film layer, by an electrostatic force; and

a plurality of lift pins which vertically moves the object to be processed with respect to the upper surface of the insulating film layer in a state where the adsorption by the electrostatic force is stopped,

a plurality of through-holes through which the plurality of the lift pins passes is formed in the first metallic base material, the second metallic base material, and the insulating film layer, and a boss, which electrically insulates the lift pin from the first metallic base material and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.

2. The plasma processing apparatus according to claim 1 , wherein

in a state where the boss is inserted, a gap between an outer wall surface of the boss and an inner wall surface of the through-hole formed in the second metallic base material is larger than a gap between the outer wall surface of the boss and an inner wall surface of the through-hole formed in the first metallic base material, and the outer wall surface of the boss and an inner wall surface of the first metallic base material are connected with a first adhesive sandwiched in a gap between the outer wall surface of the boss and the inner wall surface of the first metallic base material.

3. The plasma processing apparatus according to claim 2 , wherein

a thermal conductivity of the first adhesive is higher than the thermal conductivity of the second metallic base material.

4. The plasma processing apparatus according to claim 2 , wherein

a rigidity of the first adhesive is smaller than a rigidity of the second metallic base material.

5. The plasma processing apparatus according to claim 3 , wherein

a rigidity of the first adhesive is smaller than a rigidity of the second metallic base material.

6. The plasma processing apparatus according to claim 2 , wherein

the outer wall surface of the boss and the second metallic base material are connected with a second adhesive sandwiched in the gap between the outer wall surface of the boss and the inner wall surface of the through-hole formed in the second metallic base material,

the plasma processing apparatus further comprising a communication path that communicates a gap between the outer wall surface of the boss and the second metallic base material and an outside of the first metallic base material.

7. The plasma processing apparatus according to claim 3 , wherein

the outer wall surface of the boss and the second metallic base material are connected with a second adhesive sandwiched in the gap between the outer wall surface of the boss and the inner wall surface of the through-hole formed in the second metallic base material,

the plasma processing apparatus further comprising a communication path that communicates a gap between the outer wall surface of the boss and the second metallic base material and an outside of the first metallic base material.

8. The plasma processing apparatus according to claim 4 , wherein

the outer wall surface of the boss and the second metallic base material are connected with a second adhesive sandwiched in the gap between the outer wall surface of the boss and the inner wall surface of the through-hole formed in the second metallic base material,

the plasma processing apparatus further comprising a communication path that communicates a gap between the outer wall surface of the boss and the second metallic base material and an outside of the first metallic base material.

9. The plasma processing apparatus according to claim 5 , wherein

the outer wall surface of the boss and the second metallic base material are connected with a second adhesive sandwiched in the gap between the outer wall surface of the boss and the inner wall surface of the through-hole formed in the second metallic base material,

the plasma processing apparatus further comprising a communication path that communicates a gap between the outer wall surface of the boss and the second metallic base material and an outside of the first metallic base material.

10. The plasma processing apparatus according to claim 1 , wherein

the boss has two inner and outer layers, the inner layer formed using a material having a higher insulation property and a lower thermal conductivity than a material of the outer layer.

11. The plasma processing apparatus according to claim 1 , wherein

the second metallic base material is formed using titanium or a titanium alloy as a material, and

the first metallic base material is formed using aluminum or an aluminum alloy as a material.

12. The plasma processing apparatus according to claim 2 , wherein

the second metallic base material is formed using titanium or a titanium alloy as a material, and

the first metallic base material is formed using aluminum or an aluminum alloy as a material.

13. The plasma processing apparatus according to claim 11 , wherein

the boss is formed using aluminum nitride as a material.