Pre-patterned etch stop for interconnect trench formation overlying embedded MRAM structures

1. A method for integrating an embedded memory device, the method comprising:

providing a wafer having an embedded magnetoresistive random access memory (MRAM) interconnect level comprising metal interconnects formed within a first interlayer dielectric, wherein at least one of the metal interconnects functions as a bottom electrode for the embedded MRAM device formed thereon to define a MRAM area, wherein the MRAM device structurally forms a pillar having a height greater than a height of the metal interconnects provided in a non-MRAM area;

depositing an insulating layer onto the wafer;

depositing a portion of a second interlayer dielectric onto the insulating layer to a thickness equal to a combined height provided by the insulating layer and the MRAM device;

depositing an etch stop layer onto the portion of the second interlayer dielectric at the combined height;

patterning the etch stop layer to form a patterned etch stop overlying lines in the non-MRAM area;

depositing a remaining portion of the second interlayer dielectric;

depositing a multilayer lithographic structure onto the second interlayer dielectric, the multilayer lithographic structure comprising a sacrificial nitride layer and a hardmask layer thereon;

patterning the sacrificial nitride layer and the hardmask layer to provide trench and via openings;

etching the via opening to the insulating layer, wherein the via opening is self-aligned to an one of the metal interconnects in the non-MRAM area;

etching the trench opening in the non-MRAM area to the etch stop layer and to the insulating layer overlying the MRAM device in the MRAM area; and

removing the insulating layer at the bottom of the via opening and on the MRAM device to expose the underlying metal interconnect in the non-MRAM area and a top electrode of the MRAM device.

2. The method of claim 1 , wherein the insulating layer comprises a carbon-doped silicon nitride.

3. The method of claim 1 , wherein the MRAM device comprises a magnetic tunneling junction device.

4. The method of claim 1 , wherein etching the via opening and the trench opening comprises a reactive ion etching process.

5. The method of claim 1 , wherein bottom electrode comprises a conductive cap layer.

6. The method of claim 1 , wherein patterning the etch stop layer to form the patterned etch stop further comprises providing the patterned etch stop layer overlying lines in the MRAM area.

7. The method of claim 1 , wherein the trench opening in the non-MRAM area remains at a constant depth prior to and subsequent to removing the insulating layer at the bottom of the via opening and on the MRAM device.