Dry plasma etch method to pattern MRAM stack
Apparatuses for etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Apparatuses are suitable for fabricating MRAM structures and may be used to integrate ALD and ALE processes without breaking vacuum.
1. An apparatus for processing a substrate comprising one or more layers, the apparatus comprising:
(a) one or more process chambers, each process chamber comprising a chuck;
(b) one or more gas inlets into the process chambers and associated flow-control hardware;
(c) at least one RF power supply for generating a plasma; and
(d) a controller having at least one processor and a memory, wherein the at least one processor and the memory are communicatively connected with one another, the at least one processor is at least operatively connected with the flow-control hardware and the at least one RF power supply, and
the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware and the at least one RF power supply for:
(i) causing introduction of a halogen-containing gas for a duration sufficient to substantially saturate a surface of the substrate;
(ii) causing introduction of an activation gas and generation of a plasma to etch the one or more layers of the substrate; and
(iii) providing of a reactive material that is reactive with both the halogen-containing gas and a material of the one or more layers on the substrate to one of the one or more process chambers during (i) and (ii) to form a volatile species,
wherein (i)-(iii) are performed without breaking vacuum.
2. The apparatus of claim 1 , wherein the instructions for providing the reactive material that is reactive with both the halogen-containing gas and a material of the one or more layers on the substrate to form a volatile species comprises instructions for depositing a material selected from the group consisting of silicon-containing material, titanium-containing material, germanium-containing material, tin-containing material, carbon-containing material, and combinations thereof.
3. The apparatus of claim 1 , wherein the halogen-containing gas is selected from the group consisting of Cl 2 , BCl 3 , BBr 3 , BI 3 , F 2 , BF 3 , Br 2 , I 2 and combinations thereof.
4. The apparatus of claim 1 , wherein the memory further comprises instructions for repeating (iii) after (i) and (ii) are performed in two or more cycles.
5. An apparatus for processing a substrate comprising one or more layers, the apparatus comprising:
(a) one or more process chambers, each process chamber comprising a chuck;
(b) one or more gas inlets into the process chambers and associated flow-control hardware;
(c) at least one RF power supply for generating a plasma; and
(d) a controller having at least one processor and a memory, wherein the at least one processor and the memory are communicatively connected with one another, the at least one processor is at least operatively connected with the flow-control hardware, and the at least one RF power supply and the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware and the at least one RF power supply for:
(i) causing introduction of a halogen-containing gas for a duration sufficient to substantially saturate a surface of the substrate;
(ii) causing introduction of an activation gas and activation of an activation source to etch the one or more layers of the substrate, wherein the instructions for causing activation of an activation source comprises instructions for causing generation of a plasma; and
(iii) causing introduction of a precursor gas and reducing agent to deposit a reactive material that is reactive with both the halogen-containing gas and a material of the one or more layers of the substrate.
6. The apparatus of claim 5 , wherein the precursor gas is a silicon-containing gas.
7. The apparatus of claim 5 , wherein the reactive material is selected from the group consisting of silicon-containing material, titanium-containing material, germanium-containing material, tin-containing material, carbon-containing material, and combinations thereof.
8. The apparatus of claim 5 , wherein (i)-(iii) are performed without breaking vacuum.
9. The apparatus of claim 5 , wherein the halogen-containing gas is selected from the group consisting of Cl 2 , BCl 3 , BBr 3 , BI 3 , F 2 , BF 3 , Br 2 , I 2 and combinations thereof.
10. The apparatus of claim 5 , wherein the memory further comprises instructions for repeating (iii) after (i) and (ii) are performed in two or more cycles.