Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
A method of manufacturing a semiconductor device, includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) supplying a precursor containing a first element to the substrate, (b) supplying a plasma-excited nitrogen gas to the substrate after the act (a), (c) supplying a reactant containing a second element to the substrate after the act (b), and (d) supplying a plasma-excited nitrogen gas to the substrate after the act (c). A gas purge of a space where the substrate is located and vacuumization of the space without gas supply are not performed between the act (a) and the act (b) and between the act (c) and the act (d).
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
(a) supplying a precursor containing a first element to the substrate;
(b) supplying a plasma-excited N 2 gas to the substrate after (a);
(c) supplying a reactant containing a second element to the substrate after (b); and
(d) supplying a plasma-excited N 2 gas to the substrate after (c),
wherein (b) initiates immediately after completion of (a) under a condition in which a gas purge of a space where the substrate is located and non-gas-supplying vacuumization of the space are not performed, and
wherein (d) initiates immediately after completion of (c) under the condition in which the gas purge and the non-gas-supplying vacuumization are not performed.
2. The method of claim 1 , wherein a first layer containing the first element is formed in (a),
at least a portion of the first layer is modified in (b),
the modified first layer is further modified to form a second layer containing the first element and the second element in (c),
at least a portion of the second layer is modified in (d), and
(b) starts before hydrogen contained in the first layer is stabilized.
3. The method of claim 2 , wherein (c) starts before hydrogen contained in the modified first layer is stabilized.
4. The method of claim 2 , wherein (d) starts before hydrogen contained in the second layer is stabilized.
5. The method of claim 1 , wherein (c) starts immediately after completion of (b).
6. The method of claim 1 , wherein (a) in a next cycle starts immediately after completion of (d).
7. The method of claim 1 , wherein the reactant, which is plasma-excited, is supplied in (c).
8. The method of claim 1 , wherein at least one of the precursor and the reactant contains hydrogen.
9. The method of claim 1 , wherein the precursor contains hydrogen and the reactant does not contain hydrogen.
10. The method of claim 1 , wherein the precursor does not contain hydrogen and the reactant contains hydrogen.
11. The method of claim 1 , wherein each of the precursor and the reactant contains hydrogen.
12. The method of claim 1 , wherein no hydrogen is supplied and introduced to the film during (b) and (d).
13. The method of claim 2 , wherein no hydrogen is supplied and introduced to the first layer during (b).
14. The method of claim 2 , wherein no hydrogen is supplied and introduced to the second layer during (d).