Semiconductor device packaging structure having through interposer vias and through substrate vias
A semiconductor device and method of manufacture are presented in which a first semiconductor device and second semiconductor device are bonded to a first wafer and then singulated to form a first package and a second package. The first package and second package are then encapsulated with through interposer vias, and a redistribution structure is formed over the encapsulant. A separate package is bonded to the through interposer vias.
1. A semiconductor device comprising:
a first package comprising:
a first encapsulant;
a first semiconductor die;
a second semiconductor die; and
first through substrate vias;
a second package adjacent to the first package, the second package comprising:
a second encapsulant;
a third semiconductor die;
a fourth semiconductor die; and
second through substrate vias;
a third encapsulant surrounding the first package and the second package;
a through via extending through the third encapsulant, the through via being planar with the first encapsulant and the second encapsulant;
a redistribution layer over the third encapsulant, the first package, the second package and the through via; and
an external connection on the redistribution layer.
2. The semiconductor device of claim 1 , further comprising a surface mount device adjacent to the external connection.
3. The semiconductor device of claim 1 , further comprising an integrated passive device adjacent to the external connection.
4. The semiconductor device of claim 1 , wherein the first encapsulant is in physical contact with the first through substrate vias.
5. The semiconductor device of claim 1 , wherein the first encapsulant is separated from the first through substrate vias by a dielectric layer.
6. The semiconductor device of claim 1 , wherein the first semiconductor die is hybrid bonded to the second semiconductor die.
7. A semiconductor device comprising:
a redistribution layer;
a first package located on a first side of the redistribution layer, the first package comprising:
a first semiconductor die encapsulated by a first encapsulant;
a first through via extending through the first encapsulant;
a second package located on the first side of the redistribution layer, the second package comprising:
a second semiconductor die encapsulated by a second encapsulant;
a second through via extending through the second encapsulant;
a third through via located between the first package and the second package;
a third encapsulant surrounding the first package, the second package, and the third through via; and
an external connector on the redistribution layer.
8. The semiconductor device of claim 7 , further comprising a fourth through via extending through the first semiconductor die.
9. The semiconductor device of claim 8 , wherein the fourth through via is in physical contact with the first encapsulant.
10. The semiconductor device of claim 8 , wherein the fourth through via extends through a dielectric material, the dielectric material in physical contact with the third encapsulant.
11. The semiconductor device of claim 7 , wherein the first through via is a fin.
12. The semiconductor device of claim 7 , further comprising a third semiconductor die hybrid bonded to the first semiconductor die.
13. The semiconductor device of claim 12 , further comprising a fourth semiconductor die hybrid bonded to the second semiconductor die.
14. The semiconductor device of claim 7 , further comprising a surface mount device bonded to the redistribution layer.
15. A semiconductor device comprising:
an integrated passive device located within a ball grid array;
a redistribution layer connected to the integrated passive device and the ball grid array;
a first via extending away from the redistribution layer and into a first encapsulant;
a first package within the first encapsulant, the first package comprising:
a second via extending away from the redistribution layer and into a second encapsulant different from the first encapsulant; and
a first semiconductor device bonded to a second semiconductor device;
a second package within the first encapsulant, the second package comprising:
a third via extending away from the redistribution layer and into a third encapsulant different from the second encapsulant; and
a third semiconductor device bonded to a fourth semiconductor device.
16. The semiconductor device of claim 15 , wherein the second semiconductor device is hybrid bonded to the first semiconductor device.
17. The semiconductor device of claim 15 , wherein the first package further comprises a fourth via extending away from the redistribution layer and into the first semiconductor device.
18. The semiconductor device of claim 17 , wherein the fourth via extends through a dielectric material located adjacent to the redistribution layer.
19. The semiconductor device of claim 17 , wherein the fourth via extends through the second encapsulant.
20. The semiconductor device of claim 15 , wherein the first via, the second via, and the third via are coplanar with each other.