Conductive powder formation method, device for forming conductive powder, and method of forming semiconductor device
A method of forming a conductive powder includes reducing, by a reduction reaction, a conductive powder precursor gas using a plasma. Reducing the conductive powder precursor gas forms the conductive powder. The method further includes filtering the conductive powder based on particle size. The method further includes dispersing a portion of the conductive powder having a particle size below a threshold value in a fluid.
1. A method of forming a semiconductor device, the method comprising:
forming at least one opening in a dielectric material;
depositing a graphene layer in the at least one opening;
filling the at least one opening with a conductive powder dispersed in a fluid, wherein the fluid comprises at least one of methane, isopropyl alcohol, acetone, or ethyl acetate; and
melting the conductive powder.
2. The method of claim 1 , wherein the melting of the conductive powder comprises melting the conductive powder using a laser anneal process.
3. The method of claim 2 , wherein the laser anneal process comprises scanning a laser over a surface of the semiconductor device.
4. The method of claim 1 , wherein the fluid further comprises an emulsifying agent.
5. The method of claim 1 , further comprising evaporating the fluid.
6. The method of claim 5 , wherein the evaporating of the fluid comprises evaporating the fluid prior to melting the conductive powder.
7. The method of claim 1 , further comprising lining the at least one opening with a catalyst layer, wherein the graphene layer is deposited on the catalyst layer.
8. A method of forming a semiconductor device, the method comprising:
forming at least one opening in a dielectric material;
depositing a graphene layer in the at least one opening;
reducing, by a reduction reaction, a conductive powder precursor gas using a plasma to form a conductive powder;
preheating the conductive powder precursor gas prior to the reducing the conductive powder precursor gas;
filtering the conductive powder based on particle size; and
dispersing a portion of the conductive powder having a particle size below a threshold value in a fluid;
filling the at least one opening with the conductive powder dispersed in the fluid; and
melting the conductive powder.
9. The method of claim 8 , further comprising recycling a portion of the conductive powder having a particle size equal to or above the threshold value.
10. The method of claim 8 , further comprising evaporating the fluid following the filling of the at least one opening.
11. The method of claim 10 , wherein the evaporating of the fluid comprises evaporating the fluid prior to melting the conductive powder.
12. A method of forming a semiconductor device, the method comprising:
reducing, by a reduction reaction, a conductive powder precursor gas using a plasma to form the conductive powder;
filtering the conductive powder based on particle size using at least one of an electro-static collector (ESC) process or a centrifugal process;
dispersing a portion of the conductive powder having a particle size below a threshold value in a fluid;
filling at least one opening in a dielectric material with the conductive powder dispersed in the fluid;
removing the fluid from the at least one opening by evaporation; and
melting the conductive powder following removal of the fluid.
13. The method of claim 12 , further comprising preheating the conductive powder precursor gas prior to the reducing of the conductive powder precursor gas.
14. The method of claim 12 , further comprising performing an ultrasonic vibration on a reaction chamber simultaneously with the reducing of the conductive powder precursor gas in the reaction chamber.
15. The method of claim 12 , wherein the filtering of the conductive powder comprises performing the centrifugal process.
16. The method of claim 12 , wherein the dispersing of the conductive powder in the fluid comprises dispersing the conductive powder in a fluid free of oxygen.
17. The method of claim 12 , wherein the dispersing of the conductive powder in the fluid comprises dispersing the conductive powder in a solvent including methane, acetone or isopropyl alcohol.
18. The method of claim 12 , wherein the reducing of the conductive powder precursor gas comprises reducing the conductive powder precursor gas comprising a conductive-material organic compound.
19. The method of claim 12 , wherein the reducing of the conductive powder precursor gas comprises reducing the conductive powder precursor gas comprising a conductive-material halide compound.
20. The method of claim 12 , wherein the reducing of the conductive powder precursor gas comprises reducing the conductive powder precursor gas in a reaction chamber at a pressure ranging from about 10 milliTorr (mTorr) to about 20 Torr, at a radio frequency (RF) power ranging from about 10 watts (W) to about 300 kilowatts (kW), and at a temperature ranging from about 100° C. to about 600° C.