Epitaxial semiconductor material grown with enhanced local isotropy
Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.
1. A structure comprising:
a first epitaxial layer having a first surface and a second surface inclined relative to the first surface;
a surface layer on the first surface and the second surface of the first epitaxial layer; and
a second epitaxial layer arranged over the surface layer on the first surface and the second surface of the first epitaxial layer,
wherein a portion of the first epitaxial layer defines a first interface with the surface layer, the portion of the first epitaxial layer contains a first concentration of a dopant, the surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer, the dopant is boron, the second concentration of the dopant includes a peak concentration at a second interface with the second epitaxial layer, the peak concentration ranges from 1×10 21 cm −3 to 1×10 22 cm −3 , the second concentration of the dopant decreases from the peak concentration to a first minimum concentration at or near the first interface, and the first concentration of the dopant increases over a range of depths in the portion of the first epitaxial layer from the first interface.
2. The structure of claim 1 wherein the first epitaxial layer is silicon-germanium, and the second epitaxial layer is silicon or silicon-germanium.
3. The structure of claim 1 wherein the first epitaxial layer is a raised source/drain of a first field-effect transistor.
4. The structure of claim 3 further comprising:
a second field-effect transistor including a raised source/drain region having a first surface and a second surface inclined relative to the first surface,
wherein the first surface and the second surface of the raised source/drain region of the second field-effect transistor are free of the surface layer.
5. The structure of claim 1 wherein the first surface of the first epitaxial layer is oriented normal to a <100> crystal direction in a crystal structure of the first epitaxial layer, and the second surface of the first epitaxial layer is oriented normal to a <111> crystal direction in the crystal structure of the first epitaxial layer.
6. The structure of claim 1 wherein the first surface of the first epitaxial layer is oriented normal to a first crystal direction in a crystal structure of the first epitaxial layer, and the second surface of the first epitaxial layer is oriented normal to a second crystal direction in the crystal structure of the first epitaxial layer.
7. A method comprising:
epitaxially growing a first epitaxial layer having a first surface and a second surface inclined relative to the first surface;
forming a surface layer on the first surface and the second surface of the first epitaxial layer; and
after forming the surface layer, epitaxially growing a second epitaxial layer arranged over the surface layer on the first surface and the second surface of the first epitaxial layer,
wherein a portion of the first epitaxial layer defines a first interface with the surface layer, the portion of the first epitaxial layer contains a first concentration of a dopant, and the surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer, the dopant is boron, the second concentration of the dopant includes a peak concentration at a second interface with the second epitaxial layer, the peak concentration ranges from 1×10 21 cm −3 to 1×10 22 cm −3 , the second concentration of the dopant decreases from the peak concentration to a first minimum concentration at or near the first interface, and the first concentration of the dopant increases over a range of depths in the portion of the first epitaxial layer from the first interface.
8. The method of claim 7 wherein forming the surface layer on the first surface and the second surface of the first epitaxial layer comprises:
adsorbing the dopant on the first surface and the second surface to provide the second concentration of the dopant.
9. The method of claim 8 wherein the first epitaxial layer is silicon-germanium formed by an epitaxial growth process using a gas/vapor mixture comprising a silicon-based precursor, a germanium-based precursor, and a boron-containing precursor, and adsorbing the dopant on the first surface and the second surface to provide the second concentration of the dopant comprises:
modifying the gas/vapor mixture to only include the boron-containing precursor.
10. The method of claim 7 wherein forming the surface layer on the first surface and the second surface of the first epitaxial layer comprises:
epitaxially growing a third epitaxial layer on the first surface and the second surface of the first epitaxial layer that contains the second concentration of the dopant to form the surface layer.
11. The method of claim 10 wherein the first epitaxial layer is silicon-germanium formed by an epitaxial growth process using a gas/vapor mixture comprising a silicon-based precursor, a germanium-based precursor, and a boron-containing precursor, and adsorbing the dopant on the first surface and the second surface to provide the second concentration of the dopant comprises:
increasing a flow of the boron-containing precursor in the gas/vapor mixture when forming the surface layer.
12. The method of claim 7 wherein forming the surface layer on the first surface and the second surface of the first epitaxial layer comprises:
ion implanting the first surface and the second surface of the first epitaxial layer to provide the second concentration of the dopant and thereby form the surface layer.
13. The method of claim 7 wherein the first epitaxial layer is a raised source/drain of a first field-effect transistor.
14. The method of claim 13 further comprising:
epitaxially growing a raised source/drain region of a second field-effect transistor that includes a first surface and a second surface inclined relative to the first surface; and
masking the first surface and the second surface of the raised source/drain region of the second field-effect transistor during formation of the surface layer on the first surface and the second surface of the first epitaxial layer,
wherein the first surface and the second surface of the raised source/drain region of the second field-effect transistor are free of the surface layer.
15. The method of claim 7 wherein the first surface of the first epitaxial layer is oriented normal to a <100> crystal direction in a crystal structure of the first epitaxial layer, and the second surface of the first epitaxial layer is oriented normal to a <111> crystal direction in the crystal structure of the first epitaxial layer.
16. The method of claim 7 wherein the first surface of the first epitaxial layer is oriented normal to a first crystal direction in a crystal structure of the first epitaxial layer, and the second surface of the first epitaxial layer is oriented normal to a second crystal direction in the crystal structure of the first epitaxial layer.