LED light source, LED light source manufacturing method, and direct display device thereof
Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.
1. An LED light source manufacturing method, comprising the steps of:
providing a base having an upper edge, a light emitting region formed and enclosed by the upper edge, and an inner mounting surface inwardly and concavely formed on the base along the upper edge;
forming a reflective layer on the inner mounting surface;
providing at least an LED chip installed at a bottom position of the inner mounting surface by a flip chip method or combining two metal wire bonds by a solid crystallization method;
injecting a low-viscosity and high-volatilization anti-vulcanization solvent to the inner mounting surface of the base, so that the anti-vulcanization solvent completely covers all metal materials on the inner mounting surface;
resting or heating to volatize the anti-vulcanization solvent to form an anti-vulcanization structure, and the anti-vulcanization structure being in a continuous and uninterruptible thin film state;
providing a light excitation structure including at least a fluorescent powder containing one selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
packaging the light excitation structure and the LED chip by an encapsulation structure, and the anti-vulcanization structure isolating all metal materials on the inner mounting surface from directly contacting with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst; and
dispensing a protection structure to the base and covering the encapsulation structure; wherein the encapsulation structure has a hardness lower than a hardness of the protection structure,
wherein the protection structure further comprises a plurality of uniform light particles scattered in the protection structure, and the uniform light particle is selected from the group consisting of SiO 2 , BN, Al 2 O 3 , and TiO 2 or a combination thereof,
the LED chip has a light emission wavelength falling within a range of 400-460 nm, and the light excitation structure comprises a green fluorescent powder, a first red fluorescent powder and a second red fluorescent powder, and the green fluorescent powder contains sulfur, and the first red fluorescent powder does not contain sulfur, and the second red fluorescent powder contains sulfur; the first red fluorescent powder is selected from the group consisting of T 2 XF 6 :Mn 4+ , M 2 Si 5 N 8 :Eu 2+ , and CaAlSiN 3 :Eu 2+ ; T is selected from the group consisting of Li, Na, K, and Rb, and X is selected from the group consisting of Ge, Si, Sn, Zr, and Ti; and M is selected from the group consisting of Ca, Sr, and Ba; and the second red fluorescent powder is selected from the group consisting of CaS:Eu 2+ , SrS:Eu 2+ , Ba 2 ZnS 3 :Mn 2+ , and a red quantum dot.
2. The LED light source manufacturing method of claim 1 , wherein the uniform light particle relative to the protection structure has a weight percentage concentration falling within a range of 5%-15%.
3. The LED light source manufacturing method of claim 2 , wherein the protection structure is made of a material selected from organic silicone.
4. The LED light source manufacturing method of claim 3 , wherein the encapsulation structure has a hardness preferably falling within a range of D40-D60 when the LED chip is installed at a bottom position of the inner mounting surface by a flip chip method.
5. The LED light source manufacturing method of claim 4 , wherein the protection structure has a hardness falling within a range of D60-D80.
6. The LED light source manufacturing method of claim 5 , wherein when the anti-vulcanization solvent is heated and volatilized, the heating temperature is lower than 150° C.
7. The LED light source manufacturing method of claim 6 , wherein the base is made of a transparent material.
8. The LED light source manufacturing method of claim 7 , wherein the protection structure is installed at the upper edge of the base by a dispensing method, and the protection structure has an area greater than an area of the light emitting region.
9. The LED light source manufacturing method of claim 8 , wherein the upper edge of the base is formed into a stepped shape.
10. The LED light source manufacturing method of claim 3 , wherein the encapsulation structure has a hardness preferably falling within a range of D20-D40 when the LED chip is installed at a bottom position of the inner mounting surface by a solid crystallization of the metal wire bonds.
11. The LED light source manufacturing method of claim 10 , wherein the protection structure has a hardness falling within a range of D60-D80.
12. The LED light source manufacturing method of claim 11 , wherein the anti-vulcanization structure has a thickness falling within a range of 2-10 μm.
13. The LED light source manufacturing method of claim 12 , wherein when the anti-vulcanization solvent is heated and volatilized, the heating temperature is lower than 150° C.
14. The LED light source manufacturing method of claim 13 , wherein the base is made of a transparent material.
15. The LED light source manufacturing method of claim 14 , wherein the protection structure is installed at the upper edge of the base by a dispensing method, and the protection structure has an area greater than an area of the light emitting region.
16. The LED light source manufacturing method of claim 15 , wherein the upper edge of the base is formed into a stepped shape.
17. An LED light source manufacturing method, comprising the steps of:
providing a base having an upper edge, a light emitting region formed and enclosed by the upper edge, and an inner mounting surface inwardly and concavely formed on the base along the upper edge;
forming a reflective layer on the inner mounting surface;
providing at least an LED chip installed at a bottom position of the inner mounting surface by a flip chip method or combining two metal wire bonds by a solid crystallization method;
injecting a low-viscosity and high-volatilization anti-vulcanization solvent to the inner mounting surface of the base, so that the anti-vulcanization solvent completely covers all metal materials on the inner mounting surface;
resting or heating to volatize the anti-vulcanization solvent to form an anti-vulcanization structure, and the anti-vulcanization structure being in a continuous and uninterruptible thin film state;
providing a light excitation structure including at least a fluorescent powder containing one selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
packaging the light excitation structure and the LED chip by an encapsulation structure, and the anti-vulcanization structure isolating all metal materials on the inner mounting surface from directly contacting with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst and dispensing a protection structure to the base and covering the encapsulation structure;
wherein the encapsulation structure has a hardness lower than a hardness of the protection structure,
wherein the protection structure further comprises a plurality of uniform light particles scattered in the protection structure, and the uniform light particle is selected from the group consisting of SiO 2 , BN, Al 2 O 3 , and TiO 2 or a combination thereof,
the LED chip comes with a plural quantity, and the LED chips include a chip with a light emission wavelength falling within a range of 400-460 nm and a green chip, and the light excitation structure includes a second red fluorescent powder, and the second red fluorescent powder contains sulfur; and the second red fluorescent powder is selected from the group consisting of CaS:Eu 2+ , SrS:Eu 2+ , Ba 2 ZnS 3 :Mn 2+ , and a red quantum dot.
18. The LED light source manufacturing method of claim 17 , wherein the uniform light particle relative to the protection structure has a weight percentage concentration falling within a range of 5%-15%.
19. The LED light source manufacturing method of claim 18 , wherein the protection structure is made of a material selected from organic silicone.
20. An LED light source manufacturing method, comprising the steps of:
providing a base having an upper edge, a light emitting region formed and enclosed by the upper edge, and an inner mounting surface inwardly and concavely formed on the base along the upper edge;
forming a reflective layer on the inner mounting surface;
providing at least an LED chip installed at a bottom position of the inner mounting surface by a flip chip method or combining two metal wire bonds by a solid crystallization method;
injecting a low-viscosity and high-volatilization anti-vulcanization solvent to the inner mounting surface of the base, so that the anti-vulcanization solvent completely covers all metal materials on the inner mounting surface;
resting or heating to volatize the anti-vulcanization solvent to form an anti-vulcanization structure, and the anti-vulcanization structure being in a continuous and uninterruptible thin film state;
providing a light excitation structure including at least a fluorescent powder containing one selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
packaging the light excitation structure and the LED chip by an encapsulation structure, and the anti-vulcanization structure isolating all metal materials on the inner mounting surface from directly contacting with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst and dispensing a protection structure to the base and covering the encapsulation structure;
wherein the encapsulation structure has a hardness lower than a hardness of the protection structure, wherein the protection structure further comprises a plurality of uniform light particles scattered in the protection structure, and the uniform light particle is selected from the group consisting of SiO 2 , BN, Al 2 O 3 , and TiO 2 or a combination thereof,
the LED chip comes with a plural quantity, and the LED chips include a chip with a light emission wavelength falling within a range of 400-460 nm and a green chip, and the light excitation structure comprises a first red fluorescent powder and a second red fluorescent powder, and the first red fluorescent powder does not contain sulfur, and the second red fluorescent powder contains sulfur; and the first red fluorescent powder is selected from the group consisting of T 2 XF 6 :Mn 4+ , M 2 Si 5 N 8 :Eu 2+ , and CaAlSiN 3 :Eu 2+ ; T is an element selected from the group consisting of Li, Na, K, and Rb; X is an element selected from the group consisting of Ge, Si, Sn, Zr and Ti; M is an element selected from the group consisting of Ca, Sr, and Ba; and the second red fluorescent powder is selected from the group consisting of CaS:Eu 2+ , SrS:Eu 2+ , Ba 2 ZnS 3 :Mn 2+ , and a red quantum dot.
21. The LED light source manufacturing method of claim 20 , wherein the uniform light particle relative to the protection structure has a weight percentage concentration falling within a range of 5%-15%.
22. The LED light source manufacturing method of claim 21 , wherein the protection structure is made of a material selected from organic silicone.