Selective capping processes and structures formed thereby
Embodiments disclosed herein relate generally to capping processes and structures formed thereby. In an embodiment, a conductive feature, formed in a dielectric layer, has a metallic surface, and the dielectric layer has a dielectric surface. The dielectric surface is modified to be hydrophobic by performing a surface modification treatment. After modifying the dielectric surface, a capping layer is formed on the metallic surface by performing a selective deposition process. In another embodiment, a surface of a gate structure is exposed through a dielectric layer. A capping layer is formed on the surface of the gate structure by performing a selective deposition process.
1. A structure comprising:
a first dielectric layer over a substrate, the first dielectric layer having a dielectric surface terminated with a species comprising a hydrophobic functional group, wherein the hydrophobic functional group is in a monolayer of hydrophobic functional groups along a top surface of the first dielectric layer;
a conductive feature in the first dielectric layer;
a metal cap on the conductive feature, wherein the metal cap comprises a fluorine free tungsten; and
a second dielectric layer on the dielectric surface and the metal cap.
2. The structure of claim 1 , wherein a surface of the conductive feature, on which the metal cap is disposed, is level with the dielectric surface.
3. The structure of claim 1 , wherein the hydrophobic functional group is a hydrocarbon.
4. The structure of claim 1 , wherein the hydrophobic functional group has a general form of —C X H 2X+1 .
5. The structure of claim 1 , wherein the metal cap has a thickness of between about 30 Å to about 50 Å.
6. The structure of claim 1 , wherein the metal cap comprises tungsten.
7. The structure of claim 1 , wherein the conductive feature is recessed from a surface of the first dielectric layer.
8. The structure of claim 1 , wherein the metal cap comprises cobalt.
9. A structure comprising:
a gate structure over an active area on a substrate;
a first dielectric layer over the substrate and along the gate structure;
a monolayer of hydrophobic functional groups along a top surface of the first dielectric layer;
a metal cap on the gate structure, wherein the metal cap has a concentration of chlorine that is less than 1%;
a second dielectric layer over the metal cap and the first dielectric layer; and
a conductive feature through the second dielectric layer to the metal cap.
10. The structure of claim 9 , wherein the metal cap comprises tungsten.
11. The structure of claim 9 , wherein the metal cap has a thickness in a range from 30 Å to 50 Å.
12. The structure of claim 9 , wherein a bottom surface of the metal cap is level with a top surface of the first dielectric layer.
13. The structure of claim 9 , wherein the gate structure comprises:
a gate dielectric layer having a first horizontal portion, a first vertical portion, and a second vertical portion;
a work-function tuning layer having a second horizontal portion, a third vertical portion, and a fourth vertical portion, the second horizontal portion of the work-function tuning layer being over the first horizontal portion of the gate dielectric layer, the third vertical portion and the fourth vertical portion of the work-function tuning layer being disposed laterally between the first vertical portion and the second vertical portion of the gate dielectric layer; and
a gate electrode disposed laterally between the third vertical portion and the fourth vertical portion of the work-function tuning layer, wherein the metal cap is on top surfaces of the gate electrode and the third vertical portion and the fourth vertical portion of the work-function tuning layer.
14. The structure of claim 9 , wherein at least one of the hydrophobic functional groups has a general form of —C X H 2X+1 .
15. The structure of claim 9 , wherein the metal cap extends away from the substrate further than the monolayer of the hydrophobic functional groups.
16. A structure comprising:
a semiconductor fin;
a gate structure over the semiconductor fin;
spacers adjacent to the gate structure;
an interlayer dielectric adjacent to the spacers, wherein the interlayer dielectric is planar with the spacers at a first surface;
a monolayer of a hydrophobic functional group extending along the first surface from over the interlayer dielectric to over the spacers; and
a capping layer in physical contact with the gate structure, the capping layer being in physical contact with a sidewall of the monolayer of the hydrophobic functional group, wherein the capping layer comprises a fluorine free tungsten.
17. The structure of claim 16 , wherein the hydrophobic functional group has a general form of —C X H 2X+1 .
18. The structure of claim 16 , wherein the capping layer has a thickness of between about 30 Å to about 50 Å.
19. The structure of claim 16 , wherein the capping layer has a concentration of chlorine that is less than 1%.
20. The structure of claim 16 , wherein the capping layer comprises cobalt.