IP Library › Granted Patent US 10,770,436
Granted Patent B2
US 10,770,436 · App. 16/662,714 · Granted Sep 8, 2020

Light-emitting diode (LED) device

Inventors: Ji-hye Yeon (Cheongju-si, KR); Wan-tae Lim (Suwon-si, KR); Young-soo Park (Yongin-si, KR); Jung-sub Kim (Hwaseong-si, KR); Jin-sub Lee (Suwon-si, KR); Ha-nul Yoo (Goyang-si, KR); Hye-seok Noh (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L25/0753H01L33/50H01L33/504H01L33/60
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Quick Facts
Patent No.
US 10,770,436
App. No.
16/662,714
Granted
Sep 8, 2020
Kind
B2
Abstract

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.

Claims (55)

1. A light-emitting diode (LED) device comprising:

a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;

a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;

a separation layer configured to isolate the plurality of light-emitting structures from each other;

a plurality of wavelength transformers on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures; and

a partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.

2. The LED device of claim 1 , further comprising:

a reflective layer between an electrode layer, of the plurality of electrode layers, and a light-emitting structure, of the plurality of light-emitting structures.

3. The LED device of claim 1 , further comprising:

an uneven structure on a surface of a light-emitting structure, of the plurality of light-emitting structures.

4. The LED device of claim 1 , wherein the partition layer includes one or more sidewalls associated with a slope, such that the one or more sidewalls define a space having a distal end and proximate end in relation to at least one light-emitting structure of the plurality of light-emitting structures, the distal end having a greater diameter than the proximate end.

5. The LED device of claim 1 , wherein the partition layer includes a single body structure.

6. The LED device of claim 1 , further comprising:

a light reflecting layer on a sidewall of the partition layer.

7. The LED device of claim 1 , wherein the separation layer includes,

a separating insulation layer on first sidewalls and bottom surfaces of the light-emitting structures, and

a mold insulation layer configured to insulate the electrode layers from each other, respectively, and

insulate the light-emitting structures from each other, respectively.

8. The LED device of claim 7 , wherein a bottom surface of the mold insulation layer is flush with the bottom surfaces of the electrode layers.

9. The LED device of claim 1 , wherein the separation layer includes,

a separating insulation layer on first sidewalls and bottom surfaces of the light-emitting structures,

a metal layer insulated from the light-emitting structures by the separating insulation layer, and

a mold insulation layer configured to insulate the electrode layers from the metal layer.

10. The LED device of claim 1 , wherein,

the separation layer includes,

a first separating insulation layer on first sidewalls and bottom surfaces of the light-emitting structures,

a first metal layer insulated from the light-emitting structures by the first separating insulation layer, and

a mold insulation layer insulating the electrode layers from one another; and

the partition layer includes,

a second separating insulation layer on first sidewalls of the plurality of wavelength transformers, the second separating insulation layer extending from the first separating insulation layer, and

a second metal layer on the first sidewalls of the plurality of wavelength transformers, the second metal layer extending from the first metal layer.

11. The LED device of claim 1 , wherein the partition layer overlaps at least a portion of the plurality of light-emitting structures.

12. The LED device of claim 1 , wherein the separation layer covers the first surface of each of the plurality of light-emitting structures.

13. The LED device of claim 1 , wherein the partition layer includes at least one of a substrate structure, an insulation structure, and a light reflecting structure.

14. A light-emitting diode (LED) device comprising:

a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;

a plurality of electrode layers on first surfaces of the plurality of light-emitting structures;

a separation layer configured to isolate the plurality of light-emitting structures from each other;

a plurality of wavelength transformers including quantum dots on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures, the quantum dots including a group III-V compound semiconductor or a group II-VI compound semiconductor having a core-shell structure comprising a core and a shell, the core having a diameter between 1 nm and 30 nm, the shell having a thickness between 0.1 nm and 20 nm; and

a partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.

15. The LED device of claim 14 , wherein

the core includes CdSe or InP, and

the shell includes ZnS or ZnSe.

16. The LED device of claim 14 , wherein the core has a diameter between 3 nm and 10 nm.

17. The LED device of claim 14 , wherein the shell has a thickness between 0.5 nm and 2 nm.

18. The LED device of claim 14 , wherein the wavelength transformers include quantum dots mixed with phosphor.

19. The LED device of claim 14 , further comprising:

a reflective layer between an electrode layer, of the plurality of electrode layers, and a light-emitting structure, of the plurality of light-emitting structures, and

an uneven structure on a surface of the light-emitting structure, of the plurality of light-emitting structures.

20. A light-emitting diode (LED) device comprising:

a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;

a plurality of electrode layers on first surfaces of the plurality of light-emitting structures;

a separation layer configured to isolate the plurality of light-emitting structures from each other;

a plurality of wavelength transformers including quantum dots on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures; and

a partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.

Priority Claims (1)
KR 10-2016-0023628 · Feb 26, 2016 · national
Continuity (4)
Continuation 16178025 · Nov 1, 2018
Continuation 15878720 · Jan 24, 2018
Continuation 15292332 · Oct 13, 2016
Related Publication 20200066689A1 · Feb 27, 2020
Cited By (3)
US 12,284,855 US 12,381,626 US 12,635,301