Method and apparatus to determine a patterning process parameter
A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
1. A method, comprising:
measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and
measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
2. The method of claim 1 , wherein the second metrology recipe differs from the first metrology recipe in terms of a wavelength of the radiation used.
3. The method of claim 1 , wherein the second metrology recipe differs from the first metrology recipe in terms of a polarization of the radiation used.
4. The method of claim 1 , wherein the second metrology recipe differs from the first metrology recipe in terms of a substrate rotation, a focus level, and/or an incident measurement beam radiation distribution used.
5. The method of claim 1 , wherein the metrology target has geometric symmetry at a nominal physical configuration, wherein a different physical configuration of the structure than the nominal physical configuration causes an asymmetric optical characteristic distribution in the detected representation and at least one parameter of the at least one patterning process parameter measures change in the physical configuration.
6. The method of claim 1 , wherein the first metrology recipe comprises measuring with more wavelengths and/or more polarizations than the second metrology recipe and the first plurality of instances is less than the second plurality of instances.
7. The method of claim 1 , wherein the first measurement recipe comprises a plurality of characteristics of the applying radiation to, and detecting radiation from, instances of the metrology target and wherein the second metrology recipe comprises a subset of the characteristics used in the first metrology recipe.
8. The method of claim 1 , wherein the first metrology recipe is used to determine a first parameter of the at least one parameter and the second metrology recipe is used to determine a second different parameter of the at least one parameter.
9. The method of claim 1 , further comprising measuring a third different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a third metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the third metrology recipe differs from the first and second metrology recipes in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
10. The method of claim 1 , wherein the metrology target is an on-product metrology target.
11. The method of claim 1 , further comprising measuring a characteristic of reflected radiation from the substrate and recording values of the measured characteristic across the substrate.
12. The method of claim 11 , further comprising determining a correlation between the recorded values of the measured characteristic and the at least one parameter.
13. A method comprising:
obtaining spatial information existing between instances of a metrology target on the substrate;
based on the spatial information, determining a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target for measuring a first plurality of instances of the metrology target on the substrate processed using a patterning process to determine values of a parameter of the patterning process; and
based on the spatial information, determining a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target for measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the parameter of the patterning process, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
14. The method of claim 13 , wherein the second metrology recipe differs from the first metrology recipe in terms of a wavelength of the radiation used and/or a polarization of the radiation used.
15. The method of claim 13 , wherein the second metrology recipe differs from the first metrology recipe in terms of a substrate rotation, a focus level, and/or an incident measurement beam radiation distribution used.
16. The method of claim 13 , wherein the metrology target has geometric symmetry at a nominal physical configuration, wherein a different physical configuration of the structure than the nominal physical configuration causes an asymmetric optical characteristic distribution in the detected representation and the patterning process parameter measures change in the physical configuration.
17. The method of claim 13 , wherein the first metrology recipe comprises measuring with more wavelengths and/or more polarizations than the second metrology recipe and the first plurality of instances is less than the second plurality of instances.
18. The method of claim 13 , wherein the first metrology recipe is used to determine a first parameter of the at least one parameter and the second metrology recipe is used to determine a second different parameter of the at least one parameter.
19. The method of claim 13 , further comprising determining a third metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target for measuring a third different plurality of instances of the metrology target on the same substrate to determine values of the parameter of the patterning process, wherein the third metrology recipe differs from the first and second metrology recipes in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
20. A computer program product comprising a computer non-transitory readable medium having instructions recorded thereon, the instructions when executed by a computer implementing the method of claim 1 .