Air-cavity module with enhanced device isolation
The present disclosure relates to an air-cavity module having a thinned semiconductor die and a mold compound. The thinned semiconductor die includes a back-end-of-line (BEOL) layer, an epitaxial layer over the BEOL layer, and a buried oxide (BOX) layer with discrete holes over the epitaxial layer. The epitaxial layer includes an air-cavity, a first device section, and a second device section. Herein, the air-cavity is in between the first device section and the second device section and directly in connection with each discrete hole in the BOX layer. The mold compound resides directly over at least a portion of the BOX layer, within which the discrete holes are located. The mold compound does not enter into the air-cavity through the discrete holes.
1. An apparatus comprising:
a thinned semiconductor die comprising:
a back-end-of-line (BEOL) layer having an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion;
an epitaxial layer residing over the upper surface of the BEOL layer and comprising an air-cavity, a first device section, and a second device section, wherein:
the air-cavity is over the first surface portion and not over the second surface portion, wherein no device component within the air cavity is electrically coupled to the first device section or the second device section;
the first device section and the second device section are located on opposite sides of the air-cavity; and
the first device section and the second device section are over the second surface portion and not over the first surface portion; and
a buried oxide (BOX) layer having a plurality of discrete holes and residing over the epitaxial layer, wherein the plurality of discrete holes are over the first surface portion and not over the second surface portion, and directly in connection with the air-cavity; and
a first mold compound directly over at least a portion of the BOX layer, within which the plurality of discrete holes are located, wherein the first mold compound does not enter into the air-cavity of the epitaxial layer through the plurality of discrete holes within the BOX layer.
2. The apparatus of claim 1 wherein the first mold compound has a relative permittivity of no more than 7.
3. The apparatus of claim 1 wherein the first mold compound has a relative permittivity of no more than 4.
4. The apparatus of claim 1 wherein the first mold compound comprises polymer granules, wherein each polymer granule is larger than any of the plurality of discrete holes.
5. The apparatus of claim 4 wherein a diameter of each of the plurality of discrete holes is between 0.1 μm and 100 μm, and a diameter of each polymer granule is between 0.2 μm and 500 μm.
6. The apparatus of claim 4 wherein a diameter of each of the plurality of discrete holes is between 0.2 μm and 1 μm, and a diameter of each polymer granule is between 0.5 μm and 50 μm.
7. The apparatus of claim 4 wherein a shape of each of the plurality of discrete holes is one of a group consisting of a cuboid, a cylinder, and a circular truncated cone.
8. The apparatus of claim 1 further comprising a thermally enhanced mold compound that resides over the first mold compound.
9. The apparatus of claim 8 wherein the first mold compound and the thermally enhanced mold compound are formed from an identical material.
10. The apparatus of claim 8 wherein the first mold compound and the thermally enhanced mold compound are formed from different materials.
11. The apparatus of claim 1 wherein the epitaxial layer further comprises isolation sections, wherein:
the isolation sections surround the first device section and the second device section, and separate the first device section and the second device section from the air-cavity; and
the isolation sections are over the second surface portion and not over the first surface portion.
12. The apparatus of claim 1 wherein the first device section includes a first source, a first drain, and a first channel for a first field effect transistor (FET), and the second device section includes a second source, a second drain, and a second channel for a second FET.
13. The apparatus of claim 1 wherein the first mold compound is directly over the entirety of the BOX layer.
14. The apparatus of claim 1 further comprising a low permittivity mold compound, wherein:
the first mold compound resides directly over a first portion of the BOX layer, within which the plurality of discrete holes are located;
the low permittivity mold compound resides directly over second portions of the BOX layer, within which the plurality of discrete holes are not located; and
the low permittivity mold compound at least partially encapsulates sides of the first mold compound.
15. The apparatus of claim 14 wherein the low permittivity mold compound has a relative permittivity of no more than 7.
16. The apparatus of claim 14 further comprising a thermally enhanced mold compound that resides over the first mold compound, wherein the low permittivity mold compound at least partially encapsulates sides of the thermally enhanced mold compound.
17. The apparatus of claim 16 wherein the low permittivity mold compound and the thermally enhanced mold compound are formed from an identical material.
18. The apparatus of claim 16 wherein the low permittivity mold compound and the thermally enhanced mold compound are formed from different materials.
19. The apparatus of claim 1 further comprising a module substrate and a second mold compound, wherein:
the thinned semiconductor die is a flip-chip die and further includes a plurality of interconnects extending from a lower surface of the BEOL layer towards an upper surface of the module substrate; and
the second mold compound resides over the upper surface of the module substrate and encapsulates at least sides of the first mold compound and the thinned semiconductor die.
20. The apparatus of claim 1 further comprising a multilayer redistribution structure and a second mold compound wherein:
the thinned semiconductor die resides directly over an upper surface of the multilayer redistribution structure; and
the second mold compound resides over the upper surface of multilayer redistribution structure and encapsulates at least sides of the first mold compound and the thinned semiconductor die.
21. An apparatus comprising:
a thinned semiconductor die comprising:
a back-end-of-line (BEOL) layer having an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion;
an epitaxial layer residing over the upper surface of the BEOL layer and comprising air-cavities, support structures, a first device section, and a second device section, wherein:
the air-cavities and the support structures are over the first surface portion and not over the second surface portion;
the first device section and the second device section are over the second surface portion and not over the first surface portion;
the air-cavities are in between the first device section and the second device section; and
the air-cavities are separated from each other by the support structures; and
a buried oxide (BOX) layer having a plurality of discrete holes and residing over the epitaxial layer, wherein:
the plurality of discrete holes are over the first surface portion and not over the second surface portion;
each air-cavity is directly in connection with at least one of the plurality of discrete holes; and
the support structures provide mechanical support to a first portion of the BOX layer, within which the plurality of discrete holes are located; and
a first mold compound directly over at least the first portion of the BOX layer, wherein the first mold compound does not enter into the air-cavities of the epitaxial layer through the plurality of discrete holes within the BOX layer.