Solid-state imaging device and electronic apparatus
A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
1. An imaging device, comprising:
a first unit including a first set of four photoelectric conversion regions, a first set of four transfer transistors, and a first floating diffusion;
a second unit including a second set of four photoelectric conversion regions, a second set of transfer transistors, and a second floating diffusion, wherein the first floating diffusion and the second floating diffusion are electrically connected;
an amplification transistor shared by the first floating diffusion and the second floating diffusion and coupled to a select transistor;
wherein each transfer transistor in the first set of four transfer transistors is coupled to a respective photoelectric conversion region in the first set of four photoelectric conversion regions,
wherein each transfer transistor in the second set of four transfer transistors is coupled to a respective photoelectric conversion region in the second set of four photoelectric conversion regions,
wherein the transfer transistors in the first set of four transfer transistors are coupled to the first floating diffusion and arranged between the first floating diffusion and the first set of four photoelectric conversion regions in a plan view, and
wherein the transfer transistors in the second set of four transfer transistors are coupled to the second floating diffusion and arranged between the second floating diffusion and the second set of four photoelectric conversion regions in the plan view.
2. The imaging device according to claim 1 , further comprising:
a substrate including a first side receiving a light incidence and a second side opposite to the first side;
a plurality of wiring layers disposed over the first side of the substrate,
wherein the plurality of wiring layers includes at least four layers being arranged sequentially with a first layer closest to the first side of the substrate.
3. The imaging device according to claim 2 ,
wherein the first unit and the second unit are arranged along a first direction, and
wherein a part of a connection wiring between the first floating diffusion and the second floating diffusion extends along the first direction.
4. The imaging device according to claim 3 , further comprising:
a select transistor coupled to the amplification transistor; and
a select wiring coupled to a gate electrode of the select transistor,
wherein the select wiring extends along the first direction.
5. The imaging device according to claim 4 ,
wherein each gate electrode of the first set of four transfer transistors is substantially triangular or trapezoidal in shape, and
wherein each gate electrode of the second set of four transfer transistors is substantially triangular or trapezoidal in shape.
6. The imaging device according to claim 5 , further comprising:
a reset transistor having a source region and a drain region; and
a first power supply wiring coupled to the drain of the reset transistor,
wherein the source region of the reset transistor is coupled to the first floating diffusion and the second floating diffusion via the connection wiring, and
wherein the first power supply wiring extends along a second direction different from the first direction.
7. The imaging device according to claim 6 ,
wherein a connection wiring is coupled to the first floating diffusion, the second floating diffusion, a gate of the amplification transistor, and the source region of the reset transistor.
8. The imaging device according to claim 7 , further comprising:
a second power supply wiring coupled to a drain region of the amplification transistor,
wherein the second power supply wiring extends along the first direction.
9. The imaging device according to claim 8 ,
wherein the first power supply wiring is formed in one layer of the plurality of wiring layers, and
wherein the second power supply wiring is formed in another layer of the plurality of wiring layers.
10. The imaging device according to claim 9 ,
wherein each of the transfer transistors in the first set of four transfer transistors is arranged at a corner of the respective photoelectric conversion region in the first set of four photoelectric conversion regions to which the transfer transistor is coupled, and
wherein each of the transfer transistors in the second set of four transfer transistors is arranged at a corner of the respective photoelectric conversion region in the second set of four photoelectric conversion regions to which the transfer transistor is coupled.
11. An imaging device, comprising:
a first unit including a first set of four transfer transistors and a first floating diffusion;
a second unit including a second set of four transfer transistors and a second floating diffusion, wherein the first floating diffusion and the second floating diffusion are electrically connected;
an amplification transistor shared by the first floating diffusion and the second floating diffusion and coupled to a select transistor;
wherein the transfer transistors in the first set of four transfer transistors are coupled to the first floating diffusion and arranged between the first floating diffusion and the first set of four photoelectric conversion regions in a plan view, and
wherein the transfer transistors in the second set of four transfer transistors are coupled to the second floating diffusion and arranged between the second floating diffusion and the second set of four photoelectric conversion regions in the plan view.
12. The imaging device according to claim 11 , further comprising:
a substrate including a first side receiving a light incidence and a second side opposite to the first side;
a plurality of wiring layers disposed over the first side of the substrate,
wherein the plurality of wiring layers includes at least four layer being arranged sequentially with a first layer closest to the first side of the substrate.
13. The imaging device according to claim 12 ,
wherein the first unit and the second unit are arranged along a first direction, and
wherein a part of a connection wiring between the first floating diffusion and the second floating diffusion extends along the first direction.
14. The imaging device according to claim 13 , further comprising:
a select transistor coupled to the amplification transistor; and
a select wiring coupled to a gate electrode of the select transistor,
wherein the select wiring extends along the first direction.
15. The imaging device according to claim 14 ,
wherein each gate electrode of the first set of four transfer transistors is substantially triangular or trapezoidal in shape, and
wherein each gate electrode of the second set of four transfer transistors is substantially triangular or trapezoidal in shape.
16. The imaging device according to claim 15 , further comprising:
a reset transistor having a source region and a drain region; and
a first power supply wiring coupled to the drain of the reset transistor,
wherein the source region of the reset transistor is coupled to the first floating diffusion and the second floating diffusion via the connection wiring, and
wherein the first power supply wiring extends along a second direction different from the first direction.
17. The imaging device according to claim 16 ,
wherein a connection wiring is coupled to the first floating diffusion, the second floating diffusion, a gate of the amplification transistor, and the source region of the reset transistor.
18. The imaging device according to claim 17 , further comprising:
a second power supply wiring coupled to a drain region of the amplification transistor,
wherein the second power supply wiring extends along the first direction.
19. An electronic apparatus comprising:
the imaging device according to claim 1 .
20. An electronic apparatus comprising:
the imaging device according to claim 11 .