IP Library › Granted Patent US 10,788,528
Granted Patent B2
US 10,788,528 · App. 16/151,826 · Granted Sep 29, 2020

Crack detection chip and crack detection method using the same

Inventors: Chan-Sik Kwon (Asan-si, KR); Jin Duck Park (Asan-si, KR); Jin Wook Jang (Asan-si, KR); Ji-Yeon Han (Asan-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G01R31/11H01L23/528H01L23/562H01L23/585H01L24/06H01L2224/06131
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Quick Facts
Patent No.
US 10,788,528
App. No.
16/151,826
Granted
Sep 29, 2020
Kind
B2
Abstract

A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.

Claims (27)

1. A crack detection chip comprising:

a chip which includes an internal region and an external region surrounding the internal region;

a guard ring formed inside the chip, extending from an upper surface of the chip, and along an edge of the chip to define the internal region and the external region;

an edge wiring disposed along an edge of the internal region in the form of a closed curve; and

a pad which is exposed on a surface of the chip and is connected to the edge wiring,

wherein the edge wiring is connected to a Time Domain Reflectometry (TDR) module configured to apply an incident wave to the edge wiring through the pad, and detect a reflected wave formed in the edge wiring to detect a position of a crack.

2. The crack detection chip of claim 1 , wherein the guard ring comprises first and second guard rings, and

a distance between the first guard ring and the internal region is larger than a distance between the second guard ring and the internal region.

3. The crack detection chip of claim 1 , wherein a direction of the upper surface of the chip is a first direction, and

a width of the guard ring in the first direction is larger than a width of the edge wiring in the first direction.

4. The crack detection chip of claim 1 , wherein the edge wiring is connected to a current input module configured to apply a heat generation current to the edge wiring, and

the edge wiring is inspected by an emission scope configured to sense heat generated by the heat generation current.

5. The crack detection chip of claim 4 , wherein the edge wiring comprises a first edge wiring and a second edge wiring which are separated from each other,

the pad comprises first and second pads separated from each other and connected to the first and second edge wirings, respectively, and

the current input module applies heat generation currents of different magnitudes to the first and second edge wirings through the first and second pads, respectively.

6. The crack detection chip of claim 1 , wherein the edge wiring is connected to a time propagation delay (tPD) unit configured to apply an input signal to the edge wiring through the pad, and determine a presence or absence of a crack through a time at which the input signal propagates through the edge wiring.

7. The crack detection chip of claim 6 , further comprising:

a divided edge wiring disposed along an edge of the internal region in the form of a closed curve and separated from the edge wiring,

wherein the divided edge wiring comprises first to n-th divided edge wirings divided from one another,

the pad comprises first to n-th pads connected to the first to n-th divided edge wirings, respectively, and

the tPD unit comprises first through n-th input units configured to input first through n-th input signals to the first through n-th divided edge wirings, respectively, through the first through n-th pads, respectively, to determine presence or absence of a crack.

8. The crack detection chip of claim 1 , wherein the TDR module detects the position of the crack through a time at which the reflected wave formed in the edge wiring is detected, and

the reflected wave moves at least once along an entirety of the edge wiring and is detected by the TDR module.

9. The crack detection chip of claim 1 , wherein the edge wiring comprises a first portion located at a first distance from the guard ring,

a second portion located at a second distance from the guard ring, and

the second distance is greater than the first distance.

10. The crack detection chip of claim 9 , wherein the first and second portions are alternately arranged on the closed curve of the edge wiring.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2018
From: KWON, CHAN-SIK; PARK, JIN DUCK; JANG, JIN WOOK; HAN, JI-YEON
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 047070/0189 →
Priority Claims (1)
KR 10-2018-0023638 · Feb 27, 2018 · national
Continuity (1)
Related Publication 20190265291A1 · Aug 29, 2019
Cited By (3)
US 12,550,684 US 12,644,923 US 12,669,459