Precleaning apparatus and substrate processing system
A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.
1. A precleaning apparatus comprising:
a chamber having an internal space in which a substrate is cleaned;
a substrate support disposed in the chamber and configured to support the substrate;
a plasma generation unit disposed in the chamber and configured to generate plasma gas;
a heating unit configured to heat the substrate on the substrate support;
a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber;
a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber; and
a halogen gas supply unit configured to supply halogen gas for silicon etching or silicon compound etching to the internal space of the chamber,
wherein the cleaning gas supply unit comprises a first gas supply unit configured to supply fluorine-based gas, a second gas supply unit configured to supply nitrogen-based gas, and a third gas supply unit configured to supply inert gas.
2. The precleaning apparatus of claim 1 , wherein the halogen gas comprises chlorine-based gas.
3. The precleaning apparatus of claim 2 , wherein the chlorine-based gas is at least one of Cl 2 , SiCl 4 , CHCl 3 , CH 2 Cl 2 , CCl 4 and BCl 3 .
4. The precleaning apparatus of claim 1 , wherein the fluorine-based gas is at least one of CHF 3 , CF 4 , C 2 F 6 , C 4 F 8 and SF 6 .
5. The precleaning apparatus of claim 1 , wherein the heating unit is configured to heat the substrate to a temperature of 800° C. or below.
6. The precleaning apparatus of claim 5 , wherein the chamber is formed of ceramic, glass, or quartz.
7. The precleaning apparatus of claim 1 , further comprising a shower head configured to discharge gas supplied from the cleaning gas supply unit to be distributed to the substrate.
8. The precleaning apparatus of claim 1 , wherein the first gas supply unit comprises a first gas storage portion and a first gas supply line connecting the first gas storage portion and the chamber,
the second gas supply unit comprises a second gas storage portion and a second gas supply line connecting the second gas storage portion and the chamber,
the third gas supply unit comprises a third gas storage portion and a third gas supply line connecting the third gas storage portion and the chamber,
the hydrogen gas supply unit comprises a hydrogen gas storage portion and a hydrogen gas supply line connecting the hydrogen gas storage portion and the chamber, and
the halogen gas supply unit comprises a halogen gas storage portion and a halogen gas supply line connecting the halogen gas storage portion and the chamber.
9. The precleaning apparatus of claim 1 , wherein the heating unit is configured to heat the substrate to a temperature of between 500° C. and 800° C.
10. A precleaning apparatus comprising:
a chamber;
a substrate support in an internal space of the chamber and configured to support a substrate having a contaminated or damaged portion;
a heating unit configured to heat the substrate on the substrate support;
a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber to heat-treat the heated substrate;
a plasma generation unit disposed in the chamber and configured to generate plasma gas;
a cleaning gas supply unit configured to supply gas to the internal space of the chamber to remove an oxide from the contaminated or damaged portion of the substrate using plasma etching; and
a halogen gas supply unit configured to supply halogen gas to the internal space of the chamber to remove a surface layer of the contaminated or damaged portion of the substrate,
wherein the cleaning gas supply unit comprises a first gas supply unit configured to supply fluorine-based gas to the internal space of the chamber, a second gas supply unit configured to supply nitrogen-based gas to the internal space of the chamber, and/or a third gas supply unit configured to supply inert gas to the internal space of the chamber.
11. The precleaning apparatus of claim 10 , wherein the halogen gas comprises a chlorine-based gas that is at least one of Cl 2 , SiCl 4 , CHCl 3 , CH 2 Cl 2 , CCl 4 and BCl 3 .
12. The precleaning apparatus of claim 10 , wherein the heating unit is configured to heat the substrate to a temperature of no greater than 800° C.
13. The precleaning apparatus of claim 12 , wherein the chamber is formed of ceramic, glass, or quartz.