Plasma treatment apparatus and method of fabricating semiconductor device using the same
Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.
1. A plasma treatment apparatus comprising:
a chamber which provides a plasma treatment space;
a bottom electrode disposed in the chamber, wherein the bottom electrode supports a wafer;
a top electrode disposed in the chamber facing the bottom electrode;
a source power source which supplies a source power output of a first frequency to the bottom electrode;
a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode; and
a pulse power source which applies a pulse voltage to the bottom electrode,
wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level lower than the first voltage level in a second time section and is applied to the bottom electrode, and
wherein the pulse voltage has a third voltage equal to zero in the first time section and a positive voltage level in the second time section.
2. The plasma treatment apparatus of claim 1 , wherein the second voltage level is higher than zero.
3. The plasma treatment apparatus of claim 1 , wherein the pulse power source causes electrons generated from a plasma in the chamber to be incident on the wafer in the second time section.
4. The plasma treatment apparatus of claim 1 , wherein the source power output is a source voltage which is pulse-modulated to a fourth voltage level in the first time section and pulse-modulated to a fifth voltage level lower than the fourth voltage level in the second time section and is applied to the bottom electrode.
5. The plasma treatment apparatus of claim 1 , wherein the source power source is synchronized with the bias power source.
6. The plasma treatment apparatus of claim 1 , wherein a plasma potential, increased at a first rising speed by the bias voltage, is formed in the chamber in the second time section, and a sheath potential, increased at a second rising speed by the pulse voltage, is formed adjacent to the wafer in the chamber in the second time section.
7. The plasma treatment apparatus of claim 6 , wherein the second rising speed is greater than the first rising speed.
8. The plasma treatment apparatus of claim 6 , wherein the second rising speed is about 2000 V/1 μs or more.
9. A plasma treatment apparatus comprising:
a chamber which provides a plasma treatment space;
a bottom electrode disposed in the chamber, wherein the bottom electrode supports a wafer;
a top electrode which is disposed in the chamber facing the bottom electrode;
a source power source which generates a plasma in the chamber by applying a source voltage of a first voltage level higher than zero to the bottom electrode in a first time section, the source voltage having a second voltage level equal to zero in a second time section;
a bias power source which supplies a bias power output to the bottom electrode, wherein the bias power source causes ions contained in the plasma to be incident on the wafer by applying a bias voltage of a third voltage level to the bottom electrode in the first time section and applying a bias voltage of a fourth voltage level lower than the third voltage level to the bottom electrode in the second time section; and
a pulse power source which causes electrons contained in the plasma to be incident on the wafer by applying a pulse voltage having a positive voltage level to the bottom electrode in the second time section, the pulse voltage having the second voltage level in the first time section.
10. The plasma treatment apparatus of claim 9 , wherein the pulse voltage rises at a rising speed of about 2000 V/1 μs or more.
11. The plasma treatment apparatus of claim 9 , wherein the top electrode is connected to a ground power source.
12. The plasma treatment apparatus of claim 9 , wherein the source power source is synchronized with the bias power source.
13. The plasma treatment apparatus of claim 9 , wherein the fourth voltage level is higher than zero.