Semiconductor device including metal-2 dimensional material-semiconductor contact
A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
1. A semiconductor device comprising:
a gate insulating film between a gate electrode and an undoped semiconductor layer;
a metal layer electrically contacting the undoped semiconductor layer; and
a two-dimensional material layer between the undoped semiconductor layer and the metal layer, the two-dimensional material layer having a two-dimensional crystal structure including non-carbon based two-dimensional crystals,
wherein the metal layer comprises:
a source electrode on the gate insulating film, the source electrode facing a first side surface of the undoped semiconductor layer; and
a drain electrode on the gate insulating film, the drain electrode facing a second side surface of the semiconductor layer,
wherein the two-dimensional material layer includes a first two-dimensional material layer between the source electrode and the first side surface of the semiconductor layer and a second two-dimensional material layer between the drain electrode and the second side surface of the semiconductor layer, and
wherein the first and second two-dimensional material layers are detached.
2. The semiconductor device of claim 1 , wherein
the first two-dimensional material layer is bent to extend from the first side surface of the semiconductor layer up to a first region of an upper surface of the semiconductor layer; and
the second two-dimensional material layer is bent to extend from the second side surface of the semiconductor layer up to a second region of the upper surface of the semiconductor layer.
3. The semiconductor device of claim 1 , wherein the two-dimensional material layer is bent at an angle of about 90 degrees between a side surface of the undoped semiconductor layer and an upper surface of the undoped semiconductor layer.
4. The semiconductor device of claim 1 , wherein the two-dimensional material layer includes at least one of TiO x , NbO x , MnO x , VaO x , MnO 3 , TaO 3 , WO 3 , MoCl 2 , CrCl 3 , RuCl 3 , BiI 3 , PbCl 4 , GeS, GaS, GeSe, GaSe, PtSe 2 , In 2 Se 3 , GaTe, InS, InSe, InTe, hexagonal BN (h-BN), or phosphorene.
5. The semiconductor device of claim 1 , wherein a thickness of the two-dimensional material layer is within a range of about 0.3 nm to about 5 nm.
6. The semiconductor device of claim 1 , wherein the gate electrode includes a metal material.
7. The semiconductor device of claim 1 , wherein the two-dimensional material layer has a shape of one of a nano-wire pattern, a nano-slit pattern, a nano-dot pattern, or a nano-hole pattern.
8. The semiconductor device of claim 1 , wherein the metal layer includes at least one of magnesium (Mg), aluminum (Al), scandium (Sc), titanium (Ti), vanadium (V), chrome (Cr), manganese (Mn), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), zirconium (Zr), niobium (Nb), molybdenum (Mo), lead (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), lanthanum (La), hafnium (Hf), tantalum (Ta), tungsten (W), iridium (Ir), platinum (Pt), gold (Au), bismuth (Bi), or an alloy thereof.
9. The semiconductor device of claim 1 , wherein the two-dimensional material layer is in direct contact with the undoped semiconductor layer.
10. A semiconductor device comprising:
a gate insulating film between an undoped semiconductor layer and a gate electrode;
a first two-dimensional material layer adjacent to a first side surface of the gate insulating film, the first two-dimensional material layer having a two-dimensional crystal structure including non-carbon based two-dimensional crystals;
a second two-dimensional material layer adjacent to a second side surface of the gate insulating film opposite the first side surface, the second two-dimensional material layer having a two-dimensional crystal structure including non-carbon based two-dimensional crystals;
a source electrode on the first two-dimensional material layer; and
a drain electrode on the second two-dimensional material layer, wherein
the source electrode electrically contacts the undoped semiconductor layer,
wherein the first and second material layers are detached.
11. The semiconductor device of claim 10 , wherein the source electrode and the drain electrode are spaced apart from the gate insulating film.
12. The semiconductor device of claim 10 , further comprising:
an insulation layer, wherein the undoped semiconductor layer is on an upper surface of the insulation layer; and
a substrate, wherein the insulation layer is on an upper surface of the substrate.
13. The semiconductor device of claim 10 , wherein the first two-dimensional material layer is between the undoped semiconductor layer and the source electrode and the second two-dimensional material layer is between the undoped semiconductor layer and the drain electrode.
14. The semiconductor device of claim 10 , wherein the first two-dimensional material layer includes at least one of TiO x , NbO x , MnO x , VaO x , MnO 3 , TaO 3 , WO 3 , MoCl 2 , CrCl 3 , RuCl 3 , BiI 3 , PbCl 4 , GeS, GaS, GeSe, GaSe, PtSe 2 , In 2 Se 3 , GaTe, InS, InSe, InTe, hexagonal BN (h-BN), or phosphorene.
15. The semiconductor device of claim 10 , wherein a thickness of the first two-dimensional material layer is within a range of about 0.3 nm to about 5 nm.
16. The semiconductor device of claim 10 , wherein the source electrode includes at least one of magnesium (Mg), aluminum (Al), scandium (Sc), titanium (Ti), vanadium (V), chrome (Cr), manganese (Mn), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), zirconium (Zr), niobium (Nb), molybdenum (Mo), lead (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), lanthanum (La), hafnium (Hf), tantalum (Ta), tungsten (W), iridium (Ir), platinum (Pt), gold (Au), bismuth (Bi), or an alloy thereof.
17. The semiconductor device of claim 10 , wherein the first two-dimensional material layer is spaced apart from the gate insulating film.
18. The semiconductor device of claim 10 , wherein the first two-dimensional material layer has a shape of one of a nano-wire pattern, a nano-slit pattern, a nano-dot pattern, or a nano-hole pattern.
19. The semiconductor device of claim 10 , wherein the first two-dimensional material layer and the second two-dimensional material layer are in direct contact with the undoped semiconductor layer.