Plasma processing apparatus and plasma processing method

1. A plasma processing apparatus comprising:

a processing chamber including a dielectric window;

a coil shaped RF antenna provided outside the dielectric window;

a substrate support, provided in the processing chamber, configured to mount thereon a target substrate to be processed;

a processing gas supply configured to supply a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate;

an RF power supply configured to supply an RF power for RF discharge of the processing gas to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber;

a floating coil that is electrically floating and arranged at a position outside the processing chamber, wherein the floating coil is to be coupled with the RF antenna by an electromagnetic induction;

a variable capacitor provided in a loop of the floating coil and having an electrostatic capacitance;

a capacitance control unit configured to change a direction of a current flowing through the floating coil and to improve uniformity of a plasma density distribution below the floating coil in a radial direction with respect to the floating coil by dynamically varying the electrostatic capacitance of the variable capacitor;

a coil current measuring unit configured to measure a current value of a coil current flowing through the floating coil and transfer the measured current value of the coil current to the capacitance control unit;

a Vpp detector configured to measure a peak value of an RF voltage before the RF voltage is inputted into the RF antenna and transfer the measured peak value of the RF voltage to the capacitance control unit; and

an RF ampere meter configured to measure a current value of an RF antenna current flowing through the RF antenna and transfer the measured current value of the RF antenna current to the capacitance control unit;

wherein the dielectric window is airtightly provided as a ceiling of the processing chamber, and the dielectric window covers the entire top part of the processing chamber,

the RF antenna is mounted and arranged on the dielectric window, and

the floating coil is separated from the dielectric window and arranged above the RF antenna so that a distance from a plasma generation area to the floating coil is greater than a distance from the plasma generation area to the RF antenna;

wherein the capacitance control unit varies the electrostatic capacitance of the variable capacitor based on the measured current value of the coil current, the measured peak value of the RF voltage and the measured current value of the RF antenna current.

2. The apparatus of claim 1 , wherein the floating coil has a shape similar to that of the RF antenna.

3. The apparatus of claim 1 , wherein the floating coil includes a plurality of floating coils provided to be concentric with each other.

4. The apparatus of claim 1 , wherein the dielectric window is a ceiling plate disposed to face the target substrate in parallel therewith.

5. The apparatus of claim 1 , wherein the plasma of the processing gas is generated by induced electric fields in the processing chamber which are generated by an RF current supplied from the RF power supply and flowing through the RF antenna and an induced current induced by the electromagnetic induction from the RF antenna and flowing through the floating coil.

6. A plasma processing apparatus comprising:

a processing chamber including a dielectric window;

a coil shaped RF antenna provided outside the dielectric window;

a substrate support, provided in the processing chamber, configured to mount thereon a target substrate to be processed;

a processing gas supply configured to supply a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate;

an RF power supply configured to supply an RF power for RF discharge of the processing gas to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber;

a floating coil that is electrically floating and arranged at a position outside the processing chamber, wherein the floating coil is to be coupled with the RF antenna by an electromagnetic induction;

a variable capacitor provided in a loop of the floating coil and having an electrostatic capacitance;

a capacitance control unit configured to change a direction of a current flowing through the floating coil and to improve uniformity of a plasma density distribution below the floating coil in a radial direction with respect to the floating coil by dynamically varying the electrostatic capacitance of the variable capacitor;

a coil current measuring unit configured to measure a current value of a coil current flowing through the floating coil and transfer the measured current value of the coil current to the capacitance control unit;

a Vpp detector configured to measure a peak value of an RF voltage before the RF voltage is inputted into the RF antenna and transfer the measured peak value of the RF voltage to the capacitance control unit; and

an RF ampere meter configured to measure a current value of an RF antenna current flowing through the RF antenna and transfer the measured current value of the RF antenna current to the capacitance control unit;

wherein the dielectric window serves as a ceiling of the processing chamber, and the dielectric window covers the entire top part of the processing chamber,

the RF antenna is mounted and arranged on the dielectric window, and

the floating coil is separated from the dielectric window and arranged above the RF antenna so that a distance from a plasma generation area to the floating coil is greater than a distance from the plasma generation area to the RF antenna, and

wherein the dielectric window is a ceiling plate disposed to face the target substrate in parallel therewith;

wherein the capacitance control unit varies the electrostatic capacitance of the variable capacitor based on the measured current value of the coil current, the measured peak value of the RF voltage and the measured current value of the RF antenna current.