IP Library › Granted Patent US 10,811,283
Granted Patent B2
US 10,811,283 · App. 15/904,539 · Granted Oct 20, 2020

Substrate cleaning method, substrate cleaning system, and memory medium

Inventors: Miyako Kaneko (Nirasaki, JP); Keiji Tanouchi (Nirasaki, JP); Takehiko Orii (Nirasaki, JP); Itaru Kanno (Minato-ku, JP); Meitoku Aibara (Koshi, JP); Satoru Tanaka (Koshi, JP)
Assignee: TOKYO ELECTRON LIMITED
H01L21/67051H01L21/0206H01L21/02052H01L21/02057
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Quick Facts
Patent No.
US 10,811,283
App. No.
15/904,539
Granted
Oct 20, 2020
Kind
B2
Abstract

A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

Claims (40)

1. An apparatus for cleaning a substrate, comprising:

a chamber configured to accommodate a substrate;

a substrate holding device configured to hold the substrate in the chamber; and

a liquid supply device comprising a nozzle structure configured to supply a stripping-processing liquid which strips a processing film formed on the substrate and a dissolving-processing liquid which dissolves the processing film formed on the substrate; and

a control device comprising circuitry configured to control the liquid supply device such that the stripping-processing liquid is supplied to the processing film formed on the substrate accommodated in the chamber and that after the stripping-processing liquid infiltrates between the substrate and the processing film and strips the processing film off a surface of the substrate, the dissolving-processing liquid is supplied to the processing film stripped from the surface of the substrate and dissolves the processing film remaining on the substrate accommodated in the chamber,

wherein the nozzle structure of the liquid supply device comprises at least one nozzle connected to a stripping-processing liquid source and a dissolving-processing liquid source such that the at least one nozzle is configured to supply the stripping-processing liquid and the dissolving-processing liquid, the stripping-processing liquid is a first alkali solution having a first alkali concentration, and the dissolving-processing liquid is a second alkali solution having a second alkali concentration which is higher than the first alkali concentration of the first alkali solution.

2. The apparatus for cleaning a substrate according to claim 1 , wherein the nozzle structure of the liquid supply device is configured to supply a film-forming processing liquid which includes a volatile component and forms the processing film on the substrate such that the film-forming processing liquid is supplied to the substrate accommodated in the chamber.

3. The apparatus for cleaning a substrate according to claim 1 , wherein the substrate has a silicon nitride film formed on a surface of the substrate.

4. The apparatus for cleaning a substrate according to claim 1 , wherein the nozzle structure of the liquid supply device includes a moving mechanism configured to move at least one nozzle.

5. The apparatus for cleaning a substrate according to claim 1 , wherein the nozzle structure of the liquid supply device includes a nozzle that has a plurality of discharge opening portions configured to discharge liquid, and the nozzle structure of the liquid supply device is configured to increase a flow rate of liquid discharged from discharge openings facing a central portion of the substrate with respect to a flow rate of liquid discharged from discharge openings facing an outer portion of the substrate.

6. The apparatus for cleaning a substrate according to claim 1 , wherein the nozzle structure of the liquid supply device includes a two-fluid nozzle configured to supply a mixed fluid to the processing film.

7. A substrate cleaning system, comprising:

a loading/unloading station comprising a carrier mounting device and a transfer device;

a processing station connected to the loading/unloading station and comprising a transfer device and a plurality of substrate cleaning apparatuses; and

a control apparatus comprising circuitry configured to control the loading/unloading station and the processing station,

wherein each of the substrate cleaning apparatuses in the processing station includes a chamber configured to accommodate a substrate, a substrate holding device configured to hold the substrate in the chamber, a liquid supply device comprising a nozzle structure configured to supply a stripping-processing liquid which strips a processing film formed on the substrate and a dissolving-processing liquid which dissolves the processing film foil ied on the substrate, and the circuitry of the control apparatus is configured to control the liquid supply device such that the stripping-processing liquid is supplied to the processing film formed on the substrate accommodated in the chamber and that after the stripping-processing liquid infiltrates between the substrate and the processing film and strips the processing film off a surface of the substrate, the dissolving-processing liquid is supplied to the processing film stripped from the surface of the substrate and dissolves the processing film remaining on the substrate accommodated in the chamber, the nozzle structure of the liquid supply device comprises at least one nozzle connected to a stripping-processing liquid source and a dissolving-processing liquid source such that the at least one nozzle is configured to supply the stripping-processing liquid and the dissolving-processing liquid, the stripping-processing liquid is a first alkali solution having a first alkali concentration, and the dissolving-processing liquid is a second alkali solution having a second alkali concentration which is higher than the first alkali concentration of the first alkali solution.

8. The substrate cleaning system according to claim 7 , wherein the nozzle structure of the liquid supply device is configured to supply a film-forming processing liquid which includes a volatile component and forms the processing film on the substrate such that the film-forming processing liquid is supplied to the substrate accommodated in the chamber.

9. A non-transitory computer readable medium including a program, which when executed by an information processing apparatus, causes the information processing apparatus to:

instruct the liquid supply device of the apparatus for cleaning a substrate according to claim 1 to supply the stripping-processing liquid to the processing film formed on the substrate accommodated in the chamber; and

instruct the liquid supply device to supply the dissolving-processing liquid to the processing film formed on the substrate accommodated in the chamber such that after the stripping; processing liquid infiltrates between the substrate and the processing film and strips the processing film off a surface of the substrate, the dissolving-processing liquid is supplied to the processing film stripped from the surface of the substrate and dissolves the processing film remaining on the substrate accommodated in the chamber.

10. An apparatus for cleaning a substrate, comprising:

a chamber configured to accommodate a substrate;

a substrate holding device configured to hold the substrate in the chamber; and

a liquid supply device comprising a nozzle structure configured to supply a stripping-processing liquid which strips a processing film formed on the substrate and a dissolving-processing liquid which dissolves the processing film formed on the substrate; and

a control device comprising circuitry configured to control the liquid supply device such that the stripping-processing liquid is supplied to the processing film formed on the substrate accommodated in the chamber and that after the stripping-processing liquid infiltrates between the substrate and the processing film and strips the processing film off a surface of the substrate, the dissolving-processing liquid is supplied to the processing film stripped from the surface of the substrate and dissolves the processing film remaining on the substrate accommodated in the chamber,

wherein the nozzle structure of the liquid supply device comprises a plurality of nozzles including at least one first nozzle connected to a stripping-processing liquid source such that the at least one first nozzle is configured to supply the stripping-processing liquid and at least one second nozzle connected to a dissolving-processing liquid source such that the at least one second nozzle is configured to supply the dissolving-processing liquid, the stripping-processing liquid is a first alkali solution having a first alkali concentration, and the dissolving-processing liquid is a second alkali solution having a second alkali concentration which is higher than the first alkali concentration of the first alkali solution.

11. A substrate cleaning system, comprising:

a loading/unloading station comprising a carrier mounting device and a transfer device;

a processing station connected to the loading/unloading station and comprising a transfer device and a plurality of substrate cleaning apparatuses; and

a control apparatus comprising circuitry configured to control the loading/unloading station and the processing station,

wherein each of the substrate cleaning apparatuses in the processing station includes a chamber configured to accommodate a substrate a substrate holding device configured to hold the substrate in the chamber, a liquid supply device comprising a nozzle structure configured to supply a stripping-processing liquid which strips a processing film formed on the substrate and a dissolving-processing, liquid which dissolves the processing film formed on the substrate, and the circuitry of the control apparatus is configured to control the liquid supply device such that the stripping-processing liquid is supplied to the processing film formed on the substrate accommodated in the chamber and that after the stripping-processing liquid infiltrates between the substrate and the processing film and strips the processing film off a surface of the substrate, the dissolving-processing liquid is supplied to the processing film stripped from the surface of the substrate and dissolves the processing film remaining on the substrate accommodated in the chamber, the nozzle structure of the liquid supply device comprises a plurality of nozzles including at least one first nozzle connected to a stripping-processing liquid source such that the at least one first nozzle is configured to supply the stripping-processing liquid and at least one second nozzle connected to a dissolving-processing liquid source such that the at least one second nozzle is configured to supply the dissolving-processing liquid, the stripping-processing liquid is a first alkali solution having a first alkali concentration, and the dissolving-processing liquid is a second alkali solution having a second alkali concentration which is higher than the first alkali concentration of the first alkali solution.

12. The apparatus for cleaning a substrate according to claim 10 , wherein the nozzle structure of the liquid supply device is configured to supply a film-forming processing liquid which includes a volatile component and forms the processing film on the substrate such that the film-forming processing liquid is supplied to the substrate accommodated in the chamber.

13. The apparatus for cleaning a substrate according to claim 10 , wherein the substrate has a silicon nitride film formed on a surface of the substrate.

14. The apparatus for cleaning a substrate according to claim 10 , wherein the nozzle structure of the liquid supply device includes a moving mechanism configured to move at least one nozzle.

15. The apparatus for cleaning a substrate according to claim 10 , wherein the nozzle structure of the liquid supply device includes a nozzle that has a plurality of discharge opening portions configured to discharge liquid, and the nozzle structure of the liquid supply device is configured to increase a flow rate of liquid discharged from discharge openings facing a central portion of the substrate with respect to a flow rate of liquid discharged from discharge openings facing an outer portion of the substrate.

16. The apparatus for cleaning a substrate according to claim 10 , wherein the nozzle structure of the liquid supply device includes a two-fluid nozzle configured to supply a mixed fluid to the processing film.

17. The substrate cleaning system according to claim 11 , wherein the nozzle structure of the liquid supply device is configured to supply a film-forming processing liquid which includes a volatile component and forms the processing film on the substrate such that the film-forming processing liquid is supplied to the substrate accommodated in the chamber.

18. A non-transitory computer readable medium including a program, which when executed by an information processing apparatus, causes the information processing apparatus to:

instruct the liquid supply device of the apparatus for cleaning a substrate according to claim 11 to supply the stripping-processing liquid to the processing film formed on the substrate accommodated in the chamber; and

instruct the liquid supply device to supply the dissolving-processing liquid to the processing film formed on the substrate accommodated in the chamber such that after the stripping-processing liquid infiltrates between the substrate and the processing film and strips the processing film off a surface of the substrate, the dissolving-processing liquid is supplied to the processing film stripped from the surface of the substrate and dissolves the processing film remaining on the substrate accommodated in the chamber.

Priority Claims (2)
JP 2013-234843 · Nov 13, 2013 · national
JP 2014-163839 · Aug 11, 2014 · national
Continuity (2)
Division 14539174 · Nov 12, 2014
Related Publication 20180182610A1 · Jun 28, 2018
Cited By (1)
US 12,276,027