Poly gate extension source to body contact
The present disclosure relates to semiconductor structures and, more particularly, to poly gate extension source to body contact structures and methods of manufacture. The structure includes: a substrate having a doped region; a gate structure over the doped region, the gate structure having a main body and a gate extension region; and a body contact region straddling over the gate extension region and remote from the main body of the gate structure.
1. A structure comprising:
a semiconductor on insulator substrate (SOI) having a doped well region;
a gate structure formed on the doped well region, the gate structure including a main body having a channel with constant width and a gate extension region extending from the main body;
a source region on a first side of the main body of the gate structure and a drain region on a side of the main body of the gate structure; and
a diffusion contact body region abutting the source region of the gate structure adjacent to the channel, and straddling the gate extension region of the gate structure and remote from the channel,
wherein the gate extension region extends between adjacent contacts which are in the source region.
2. The structure of claim 1 , wherein the gate extension region is two gate extension regions.
3. The structure of claim 2 , wherein two gate extension regions are separated from one another.
4. The structure of claim 1 , wherein the diffusion contact body region comprises a P+ body implant diffusion over the gate extension region between adjacent fingers.
5. The structure of claim 4 , wherein the gate extension region and the P+ body implant diffusion are shared amongst adjacent fingers.
6. The structure of claim 4 , wherein the P+ body implant diffusion is a body contact.
7. The structure of claim 4 , wherein the P+ body implant diffusion and the gate extension region 14 ′ are formed entirely within the doped well region of the SOI.
8. The structure of claim 1 , wherein the gate structure is a multi-finger SOI structure, the gate extension region of adjacent fingers join together and the diffusion contact body region is shared amongst adjacent fingers of the multi-finger SOI structure, and each gate extension region of the multi-finger SOI structure share a same source region.
9. The structure of claim 8 , wherein the main body of the gate structure is between the source region and the drain region and the gate extension region extends towards the source region and away from the drain region.
10. The structure of claim 8 , wherein the diffusion contact body region extends over the source region and the adjacent contacts.
11. The structure of claim 1 , wherein:
the main body of the gate structure is between the source region and the drain region;
the gate extension region extends towards the source region and away from the drain region;
the diffusion contact body region extends over the source region and the adjacent contacts; and
ends of the main body and the gate extension region extend past different edges of the doped well region.
12. The structure of claim 11 , wherein the diffusion contact body region extends past an edge of the doped well region.
13. A structure comprising:
a semiconductor on insulator substrate (SOI) having a doped well region;
a gate structure formed on the doped well region, the gate structure including a main body having a channel with constant width and a gate extension region extending from the main body and away from the channel;
a source region on a first side of the main body of the gate structure and a drain region on a side of the main body of the gate structure; and
a diffusion contact body region abutting the source region of the gate structure adjacent to the channel, and straddling the gate extension region of the gate structure and remote from the channel,
wherein the gate structure is a multi-finger SOI structure, the gate extension region of adjacent fingers are separated from one another and the diffusion contact body region is shared amongst adjacent fingers of the multi-finger SOI structure.
14. The structure of claim 13 , wherein the gate extension region has a width larger than a minimum overlay.
15. The structure of claim 13 , wherein the gate extension region has a length as small as a minimum lithographic channel length.
16. The structure of claim 13 , wherein the diffusion contact body region straddles the gate extension region within the well region.
17. The structure of claim 13 , wherein the diffusion contact body region straddles the gate extension region partly outside of the well region.
18. The structure of claim 13 , wherein the diffusion contact body region is spaced larger than a lithographic overlay from the channel.
19. The structure of claim 13 , wherein the main body of the gate structure is between the source region and the drain region and the gate extension region extends towards the source region and away from the drain region.
20. The structure of claim 19 , wherein the gate extension region and the source region are both shared amongst each finger of the multi-finger SOI structure.