Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate
A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
1. A method of manufacturing a diamond substrate, comprising:
forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate;
producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and
performing heat treatment on the diamond structure,
the performed heat treatment causing the diamond structure to be separated along the ion implantation layer into
a first structure including the diamond seed substrate and failing to include the diamond growth layer, and
a diamond substrate including the diamond growth layer.
2. The method of manufacturing a diamond substrate according to claim 1 , wherein the ions include ions of one kind of atom selected from the group consisting of hydrogen atom, helium atom, nitrogen atom, oxygen atom, and argon atom.
3. The method of manufacturing a diamond substrate according to claim 1 , wherein the ions are implanted with an ion implantation energy of not less than 10 keV and not more than 500 keV to an ion implantation depth of not more than 3 μm.
4. The method of manufacturing a diamond substrate according to claim 1 , wherein the ions are implanted at a dose of not less than 1×10 16 cm −2 and not more than 1×10 18 cm −2 .
5. The method of manufacturing a diamond substrate according to claim 1 , wherein the heat treatment is performed in one of
an inert gas atmosphere containing oxygen gas at a concentration of not less than 10 ppm and not more than 1000 ppm, and
a vacuum atmosphere at a vacuum of not less than 1×10 −8 Pa and not more than 1×10 −2 Pa containing oxygen gas at a partial pressure of not less than 1×10 −8 Pa and not more than 1×10 −5 Pa.
6. The method of manufacturing a diamond substrate according to claim 1 , wherein a nitrogen concentration at the main surface of the diamond seed substrate is not more than 100 ppm.
7. The method of manufacturing a diamond substrate according to claim 1 , wherein the diamond seed substrate is grown by a vapor phase synthesis method.
8. The method of manufacturing a diamond substrate according to claim 1 , wherein the diamond seed substrate excluding the ion implantation layer includes a layer having a resistivity of not less than 10 −5 Ω·cm and not more than 10 9 Ω·cm, or the diamond seed substrate has a resistivity of not less than 10 −5 Ω·cm and not more than 10 9 Ω·cm.
9. The method of manufacturing a diamond substrate according to claim 1 , wherein the diamond seed substrate is a single crystal and the diamond growth layer is a single crystal.
10. The method of manufacturing a diamond substrate according to claim 1 , wherein the diamond seed substrate is a polycrystal and the diamond growth layer is a polycrystal.
11. The method of manufacturing a diamond substrate according to claim 10 , wherein crystal grains in the polycrystal at the main surface of the diamond seed substrate have an average grain size of not less than 30 μm.
12. A diamond substrate manufactured in accordance with a method of manufacturing a diamond substrate as recited in claim 1 .